• Title/Summary/Keyword: Bragg's resonance frequency

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Numerical Analysis of Bragg Reflector Type Film Bulk Acoustic Wave Resonator (수치적 계산을 이용한 Bragg Reflector형 탄성파 공진기의 특성 분석)

  • 김주형;이시형;안진호;주병권;이전국
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.980-986
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    • 2001
  • Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

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An Analysis of the Sound Stopband in Periodically Corrugated 2-D Ducts (반복 주름을 갖는 이차원 덕트의 음파차단 해석)

  • Kim, Hyun-Sil;Kim, Jae-Seung;Kim, Bong-Ki;Kim, Sang-Ryul;Lee, Seong-Hyun
    • The Journal of the Acoustical Society of Korea
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    • v.31 no.1
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    • pp.11-18
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    • 2012
  • In this paper, the occurrence of a stopband phenomenon when an acoustic wave propagates through periodically corrugated ducts is discussed using theoretical and BEM analyses. A 2-D duct with sinusoidally corrugated upper and lower walls is considered. When the magnitude of the sinusoidal corrugation is sufficiently small compared to the duct's height, the wave equation is solved with the multiple scaling perturbation method. Then stopbands for Bragg and non-Bragg resonances are computed from the condition where frequency becomes a complex number. A 2-D BEM analysis is performed to compute insertion loss of the duct, and stopbands are confirmed as predicted by analytical analysis.

Modeling of FBAR Devices with Bragg Reflectors

  • Lee, Jae-Young;Yoon, Gi-Wan;Linh, Mai
    • Journal of information and communication convergence engineering
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    • v.4 no.3
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    • pp.108-110
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    • 2006
  • Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

Effects of Thick Bottom Electrode on ZnO-based FBAR Devices

  • Lee, Jae-Young;Mai, Linh;Pham, Van Su;Kabir, S. M. Humayun;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.211-214
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    • 2007
  • In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with thick bottom electrode are investigated. The ultra-thin Cr film (300 ${\AA}-thick$) between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency of three different resonator devices was observed to be ${\sim}2.7$ GHz, and the resonance characteristics $(S_{11})$ of the FBAR devices were found to have a strong dependence on the thickness of bottom electrode.

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Effects of Multi-layer Bragg Reflectors on ZnO-based FBAR Devices

  • Lee, Jae-Young;Mai, Lihn;Pham, Van-Su;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.441-444
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    • 2007
  • In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

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