• Nuclear Engineering and Technology
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• v.56 no.11
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• pp.4679-4687
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• 2024

This study analyzes the single-event transient (SET) characteristics of alpha particles on multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D TCAD simulations. The study investigates the differences in SET responses based on the energy and incident position of incoming alpha particles, considering the structural variances between Forksheet-FET and Nanosheet-FET, as well as the presence or absence of bottom dielectric isolation (BDI) in the fabrication process. Specifically, the introduction of BDI is observed to significantly suppress the voltage drop caused by 'unintended' current, as it can block the substantial electron-hole pairs (EHP) generated by injected alpha particles in the bulk substrate from reaching the FET terminals. Furthermore, it was confirmed that the size of abnormal current decreases as the energy of the injected alpha particle increases. Additionally, evaluating the response to SET based on the fundamental logic circuit, the CMOS inverter, revealed relatively small abnormal voltage drops for both Forksheet and Nanosheet when BDI was applied, confirming high immunity to radiation effects. Moreover, it can be observed that the application of BDI enhances reliability from a memory perspective by effectively suppressing voltage flips in the SRAM's cross-coupled latch circuit.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.6
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• pp.1015-1022
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• 2023

In this paper, we propose DLP(Dual Linear Polarization) antenna with aperture coupled feeding structure for private network. The proposed antenna has general aperture coupled structure and design two port between top and bottom layer to obtain the enhanced isolation. Also, The size of each substrate(top and bottom layer) is 34.0 mm(W)×34.0 mm(L), which is designed on the FR-4 substrate which thickness (h) is 1.0 mm, and the dielectric constant is 4.4. Also, the size of patch antenna is 12.70 mm(W2)×14.60 mm(L3), and it is located on the top layer. The size of feeding line is 24.0 mm(W2)×1.6 mm(L3), and is located at the bottom layer Also, rectangular slot is located on the ground plane between top layer and bottom layer. From the fabrication and measurement results, bandwidths of 300 MHz (4.52 to 4.82 GHz) for feeding port 1, and 170 MHz (4.65 to 4.82 GHz) for feeding port 2 are obtained on the basis of -10 dB return loss and transmission coefficient S21 is got under the -30 dB. Also, cross polarization isolation between each feeding port obtained