• Journal of the Korean Chemical Society
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• v.33 no.4
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• pp.379-387
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• 1989

The synthesis of borosilicate consisted of boron and silicon was stadied. The composition, acidity and adsorption characteristics of synthesized borosilicate were examined. The synthesis rate increased with temperature and concentration of $Na_2O$, but the enhansing effects were different according to the reaction conditons. The synthesis process could be simulated by solution transfer mechanism assuming that crystals grow on the surface of crystal or nuclei with dissolved reactant. Adsorption characteristics of synthesized borosilicate was discussed with temperature programmed desorption patterns of ammonia and propylene and adsorption isotherms of propylene and propane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.292-293
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• 2006

$ZnNb_2O_6$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 10~30 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the dielectric properties significantly due to the formation of an excessive liquid and second phases. The sintered $ZnNb_2O_6$ ceramics at $900^{\circ}C$ with 25 wt% ZBS glass demonstrated 15.8 in dielectric constant(${\varepsilon}_r$), 5,400 in quality factor($Q{\times}f_0$), and $-98\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• Journal of the Korean Chemical Society
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• v.41 no.5
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• pp.251-255
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• 1997

Fluorescence spectra and life time of $Eu^{3+}$ ion in borosilicate glass medium are measured. Electronic transitions of $Eu^{3+}$ ion in borosilicate glass medium are found to come from $5D0{\rightarrow}7FJ$(J=0, 1, 2, 3, 4) transitions of SL coupling system in $f^b$ electrons configuration. From the number of Stark sublevels in spetra, crystal field for $Eu^{3+}$ ion is also found to have the symmetric character of low symmetry order, $n{\leq}2$. The fraction and the number of components of life times were varied depending on the composition of $Eu^{3+}$ in borosilicate glasses, from which the binding condition between the $Eu^{3+}$ ion and anionic oxygen of borosilicate glass can be deduced.

• Journal of the Korean Ceramic Society
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• v.16 no.3
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• pp.178-183
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• 1979

The carborundum abrasive specimens bonded with a soda-borosilicate glass were prepared. Samples fired at specified temperatures with various mixing ratio and forming pressure were examined in terms of the structure, bonding strength, and microscopic observations. Increasing the forming pressure up to 400kg/$\cm^2$, the structure became denser in proportion to the forming pressure. The bonding strength was generally increased with increasing the mixing ratio (Vb/Vg), but the bloating phenomena were observed when samples were fired above 95$0^{\circ}C$ with mixing ratio above 20%, consequently, the bonding strength was decreased. Samples fired at the temperature range 900~95$0^{\circ}C$ with mixing ratio 15~30% had the dense structure with various grades.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.405-412
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• 1995

In order to estimate the wettability of the borosilicate glasses with different composition on the noble metals of gold and silver, the measurements of the contact angle between the solid and the liquid were made at various temperatures and holding times using the sessil-drop method. The wetting behavior and the adhesion of the phases were strongly influenced by the thermal or the physical characteristics of the materials. The dependence of wetting angle ($\theta$) on the holding time (t) could be represented by the relation of $\theta$=a.tb, whereby the wettability of the systems was quantitatively compared. Also with increasing content of borosilicate glass in the glass-gold matrix composite, the tensile strength was decreased whereas the elastic modulus was increased.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.956-962
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• 1992

The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $\mu\textrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{\circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.96-100
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• 1995

Recently, alumina/glass composites have been applied as a substrate material for hybrid IC and LSI multi-chip packaging. In this study, the characterization of sodium borosilicate glasses containing NaF and $AlF_3$ and the preparation of the resulted glass/alumina composites have been examined and the effect of the addition of fluorides on the thermal. and dielectric properties of the sintered composites have been studied. The sintering temperature of specimens was lowered by about 100-$150^{\circ}C$ by the addition of fluorine compared with the specimens without fluorine. The specimens containing fluorine showed slightly lower dielectric constants than those of the specimens without fluorine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from $100{\mu}m$ to $150{\mu}m$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.