• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• 전기의세계
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• 제30권4호
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• 한국시뮬레이션학회논문지
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• 제11권1호
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• 한국기계연구소 소보
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• 통권20호
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• pp.79-87
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• 1990

Advanced ceramics have some excellent properties as the material for the mechanical component. It is, however, very difficult to grind ceramics with high efficiency because of their high strength, hardness and brittleness. Thus it is required also by a strong boom of demands for development of Machinable ceramics with high machinability in the most of industries. In present research, experiments are carried out to compare the machinability of sample Machinable ceramics. A $\ell$N(Aluminum Nitride) with additives of BN(Boron Nitride), yttrium. CaO are turned with cut-off tool type tungsten carbide bite using conventional turning machine.

• 접착 및 계면
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• 제19권3호
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• pp.113-117
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• 2018

보론카바이드는 하드니스가 다이아몬드나 보론 나이트라이드 보단 낮지만 30 GPa이상의 높은 경도를 갖고 있으며, 높은 경도로 인해 탱크 장갑, 탄피 제조에 사용되고 있다. 또한 중성자를 흡수하는 능력이 있어 중성자 흡수제로 많이 사용되고 있어, 핵 발전 관련 사업에 활용도가 증가하고 있다. 중성자는 전자와의 상호작용이 없으며, 물질을 통과하는 과정에서도 상호작용 없이 통과하는 것으로 알려져 있다. 보론 카바이드와 함께 중성자와 상호작용이 높은 원자는 수소이며, 보론을 포함하는 수소 농도가 높은 폴리에스터, 에폭시 고분자 등이 원자력 발전 폐기물 보관을 위한 제품 제조를 위한 소재로 사용되고 있다. 본 논문에서는 보론 카바이드의 표면을 철산화물과 텅스텐으로 처리하여, 개질된 보론 카바이드와 에폭시 소재와의 상호작용을 향상시켰다. XRD, XPS를 이용하여 표면개질 되었음을 확인하였고, 처리된 보론카바이드의 함량에 따른 기계적 강도는 만능시험기(UTM)로 측정하였으며, 동역학 분석기(DMA)를 사용하여 경화물의 동적 특성을 관찰하였다.

• 한국재료학회지
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• 제25권12호
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• pp.694-702
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• 2015

Nd-Fe-B permanent magnets have been used in a wide variety of applications because of their high magnetic flux density. So, demand for neodymium has been increasing in worldwide. In this study, an electrowinning process was performed in $LiF-NdF_3-Nd_2O_3$ high temperature molten salts. However, a corrosion resistant material for use in the molten salt must be found for stable operation because of the harsh corrosion environment of the electrowinning process. Therefore, for this paper, boron nitride(BN), aluminum nitride(AlN), and silicon nitride($Si_3N_4$) were selected as protective and structural materials in the high temperature electrolyte. To investigate the characteristics of BN, AlN, and $Si_3N_4$, in molten salts, materials were immersed in the molten salts for 24, 72, 120, and 192 hours. Also, surface condition and stability were investigated by SEM and EDS and corrosion products were calculated by HSC chemistry. As a result, among BN, AlN, and $Si_3N_4$, AlN was found to show the best protective material properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.141-143
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• 1994

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 춘계학술대회 논문집(한국공작기계학회)
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• pp.315-320
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• 2001

Ultra-abrasives such as diamond and CBN have used to maintain accuracy and form deviation for superalloy etc. This study contains the dry cylindrical grinding of metals with Vitrified-bond CBN wheel and Resinoid-bond CBN wheel. For various condition of grinding speed, workpiece speed, grinding depth and feed speed of table, the grinding resistance, the surface roughness, and material removal are measured and discussed.

• 진공이야기
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• 제5권2호
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• pp.18-22
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• 2018

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.