• Proceedings of the Korean Society For Composite Materials Conference
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• 1999.11a
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• pp.272-276
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• 1999

The present paper proposes design and manufacturing methods of the carbon/epoxy square grid structure with near zero-CTE in three geometrical principal directions. Bonding strength of the grid structure is examined for different bonding methods. Numerical examples show that maximum displacement of the composite grid structure is almost zero comparing with that of aluminum grid structure with same dimension under thermal loading.

• Steel and Composite Structures
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• v.19 no.3
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• pp.735-757
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• 2015

Composite bonding steel plate (CBSP) is a newly developed type of structure strengthened technique applicable to the existing RC beam. This composite structure is applicable to strengthening the existing beam bearing high load. The strengthened beam consists of two layers of epoxy bonding prestressed steel plates and the RC beam sandwiched in between. The bonding enclosed and prestressed U-shaped steel jackets are applied at the beam sides. This technique is adopted in case of structures with high longitudinal reinforcing bar ratio and impracticable unloading. The prestress can be generated on the strengthening steel plates and jackets by using the CBSP technique before loading. The test results of full-scale CBSP strengthened beams show that the strength and stiffness are enhanced without reduction of their ductility. It is demonstrated that the strain hysteresis effect can be effectively overcome after prestressing on the steel plates by using such technique. The applied plates and jackets can jointly behave together with the existing beam under the action of epoxy bonding and the mechanical anchorage of the steel jackets. The simplified formulas are proposed to calculate the prestress and the ultimate capacities of strengthened beams. The accuracy of formulas was verified with the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• The Journal of the Korean dental association
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• v.49 no.5
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• pp.265-278
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• 2011

The introduction of zirconia-based materials to the dental field broadened the design and application limits of, all-ceramic restorations. Most ceramic restorations are adhesively luted to the prepared tooth, however, resin bonding to zirconia components is less reliable than those to other dental ceramic systems. It is important for high retention, prevention of microleakage, and increased fracture resistance, that bonding techniques be improved for zirconia systems. Strong resin bonding relies on micromechanical interlocking and adhesive chemical bonding to the ceramic surface, requiring surface roughening for mechanical bonding and surface activation for chemical adhesion. In many cases, high strength ceramic restorations do not require adhesive bonding to tooth structure and can be placed using conventional cements which rely only on micromechanical retention. However, resin bonding is desirable in some clinical situations. In addition, it is likely that strong chemical adhesion would lead to enhanced long-term fracture and fatigue resistance in the oral environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.50-57
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• 2018

As devices have evolved, traditional flip chip bonding and recently commercialized thermocompression bonding techniques have been limited. Laser-assisted bonding is attracting attention as a technology that satisfies both the requirements of mass production and the yield enhancement of advanced packaging interconnections, which are weak points of these bonding technologies. The laser-assisted bonding technique can be applied not only to a two-dimensional bonding but also to a three-dimensional stacked structure, and can be applied to various types of device bonding such as electronic devices; display devices, e.g., LEDs; and sensors.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.169-174
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• 2001

This paper reports on the development of high aspect ratio structure and 3-D integrated process for MEMS-based micro gas turbines. To manufacture high aspect ratio structures, Deep Reactive Ion Etching (DRIE) process have been developed and optimized. Specially, in this study, structures with aspect ratios greater than 10 were fabricated. Also, wafer direct bonding and Infra-Red (IR) camera bonding inspection systems have been developed. Moreover, using glass/silicon wafer direct bonding, we optimized the 3-D integrated process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.860-864
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• 2003

Recently. use of compound semiconductor is widely increasing in the area of LED and RF device. In this study, wafer bonding module is designed and optimized to bond 6 inches device wafer and carrier wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Load spreader and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analyses show the designed mechanisms are very effective in performance improvement.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.342-347
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• 2001

Recently, adhesive-bonding technique is wifely used in manufacturing structures. Stress and strain analysis of joints are essential to design adhesive-bonded joints structure. The single-lap adhesive joint is the design dominating the range of adhesive joints. In this study, single-lap specimens with different joint dimensions were used for the tensile-shear test and finite element calculation in of order to investigate the effect of overlap length and adhesive-bonding thickness on adhesive strength and stress distribution of the joints. Consequently, it was found that overlap lap size and thickness can be important parameters of structure joints using adhesive bonding, which is effected on adhesive strength.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1197-1201
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• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.