• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1431-1433
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• 1995

This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Analytical Science and Technology
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• v.15 no.3
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• pp.317-320
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• 2002

The layer structure of the title compound, $[Ni(en)_2(H_2O)_2](CH_3C_6H_4SO_3)_2(H_2O)$ (en = ethylenediamine), consists of discrete cations, anions, and solvate water molecules linked by a hydrogen bonding network. The central Ni atom of the cation layer has a slightly distorted octahedral coordination geometry with the ethylenediamine ligands functioning as a N,N'-bidentate and the water ligands bonding through oxygen in a trans arrangement. The p-toluenesulfonate of the anion layer has an alternate sulfonate group directed toward opposite side of the cation layer. This layer structure is stabilized by a hydrogen bond involving the O atoms of the sulfonate, the water ligand, solvate water molecule, and the N atoms of the ethylenediamine.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.165-170
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• 1995

This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.

• Nuclear Engineering and Technology
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• v.34 no.3
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Proceedings of the Korea Concrete Institute Conference
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• 2004.11a
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• pp.17-20
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• 2004

FRP strengthening system that bonds FRP sheet or laminate underneath structure has been used popularly thesedays. The failure of this bonding system occurs mainly at the interface of bonded surface abruptly. So it is difficult to expect the failure and FRP can't show its full material capacity that makes it uneconomically. By that reason, KICT proposed a system to install FRP aminate to structure for strengthening not by bondging but by unbonding. It is to install both ends of FRP laminate by anchoring underneath structure without bonding. Then, the failure is not an interfacial problem any more, it is governed by mechanical anchoring. This paper includes an experimental study about anchoring system for prestressing CFRP laminate.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.785-792
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• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.38 no.4 s.117
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• pp.17-23
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• 2006

Paper has fibers and fines network structure and it is strongly affected by interface bond-ing between fibers. Paper structural properties can be determined depending on the inter-fiber bonding. Fines play an important role in Campbell and consolidation effect through wet pressing and drying operations. The fines are essential for the formation of bonds between fibers and for the improvement of strength properties of papers. Since the fines are components of the pulp, there are always two factors to be considered: the quality and quantity of the fines. The quality of fines might be a potential variable to give a more accurate picture of the papermaking potential of the pulp. The object of this study is to investigate the effect of different types of pulp fines on the properties of paper and to access the potential of fines for controlling the bulk of paper. Refined Sw-BKP, Hw-BKP and BCTMP fines were used to investigate the fines effect. Wet-web strength, breaking length, scattering coefficient, and hydrodynamic specific volume, and drying shrinkage were measured. According to the results, chemical and morphological compositions of fines do not strongly affect to wet-web forming by their similar Campbell effect, but strongly affect to drying operation which forms hydrogen bonding among fiber-fines-fiber matrixes. Paper bulk should be controlled by the extent of hydrogen bonding between fibers during drying operation.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.106-115
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• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.