• 제목/요약/키워드: Bonding layer

검색결과 772건 처리시간 0.026초

Titanium thin film modified silica substrate to enhance the bonding properties of nanosilver

  • Lin, H.M.;Liu, Y.T.;Lin, K.N.;Chang, W.S.;Wu, C.Y.;Liu, P.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1733-1736
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    • 2006
  • Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

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유한요소법을 이용한 SCS 절연 웨이퍼의 온도분포 해석 (Analysis of Temperature Distribution using Finite Element Method for SCS Insulator Wafers)

  • 김옥삼
    • 동력기계공학회지
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    • 제5권4호
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    • pp.11-17
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    • 2001
  • Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

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AuSn 솔더를 사용한 반도체 레이저의 본딩 (Semiconductor Laser diode Die bonding Using AuSn solder)

  • 최상현;배형철;허두창;한일기;조운조;최원준;박용주;이정일;이천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.203-205
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    • 2003
  • 레이저 다이오드를 p-side-down 방식으로 본딩하기 위하여 AuSn 솔더합금을 증착한 후 온도와 압력, 시간을 변화시켜 본딩상태를 조사하였다. CuW위에 adhsion layer와 확산방지층을 각각 $500{\AA}$$2000{\AA}$을 증착하였으며 솔더층으로 AuSn을 $2.6{\mu}m$ 증착 하였다. 열처리는 질소 분위기에서 행하였으며, 표면의 거칠기는 AFM으로 측정하였다.

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화학흡착(CVD)법에 의한 TiC 흡착 시 모재가 피복 길항합금의 항면력 및 접착력에 미치는 영향 (Effects of Composition of Substrate on Transverse Rupture Strength and Bonding Strength of Cemented Carbide Coated with Titanium Carbide by CVD Process)

  • 이건우;오재현
    • 한국표면공학회지
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    • 제24권1호
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    • pp.8-8
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    • 1991
  • To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A:WC-9.5wt%Co-MC*[low C], substrate B: WC-6wt% Co-MC*[high C] were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The result show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates.

화학증착(CVD)법에 의한 TiC 증착 시 모재가 피복 초경합금의 항절력 및 접착력에 미치는 영향 (Effects of Composition of Substrate on Transverse Rupture Strength and Bonding Strength of Cemented Carbide Coated with Titanium Carbide by CVD Process)

  • 이건우;오재현;이주완
    • 한국표면공학회지
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    • 제25권1호
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    • pp.8-15
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    • 1992
  • To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A: WC-9.5wt% Co-MC*[low C], substrate B: WC -6wt% Co-MC*[high C]) were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The results show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates. *MC:TiC+TaC

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제진강판의 기계적 특성평가와 자동차오일팬으로의 적용 (Evaluation of mechnical preoperties of vibration damping steel sheets and their application to automobile engine oil pan)

  • 정재환;민병두;하용철
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1994년도 박판성형기술의 진보
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    • pp.99-118
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    • 1994
  • In recent years reduction in noise and vibration in automobile has been strongly required not only from the standpoint of environmental regulations but also for raising the commercial value and ride comfort. Vibration damping steel sheets, which are composites made by sandwitching a visco-elastic resin layer between two steel sheets, have been developed as effective noise-abating materials and have found a growth of use in automobile industries. Vibration damping steel sheets for commercial use must be excellent in vibration damping property, press formability and spot weldability, but are inferior to ordinary steel sheets. In this study, the mechanical properties of vibration damping steel are evaluated, and press formability is analysed on the basis of those properties and shear bonding strength. The development of engine oil pan using damping steel sheets are also reported, focusing on serious problems in oil pan drawing.

Characteristics of Ni-based Alloy Bond in Diamond Tool Using Vacuum Brazing Method

  • An, Sang-Jae;Song, Min-Seok;Jee, Won-Ho
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1130-1131
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    • 2006
  • We found that the """interface reaction between Ni-based alloy bond, diamond, and steel core is very critical in bond strength of diamond tool. None element from metal bond diffuses into the steel core but the Fe element of steel core was easily diffused into the bond. This diffusion depth of Fe has a great effect on the bonding strength. The Cr in steel core accelerated the Fe diffusion and improved the bond strength, on the other hand, carbon decreased the strength. Ni-based alloy bond including Cr was chemically bonded with diamond by forming Cr carbide. However, the Cr and Fe in STS304 were largely interdiffused, the strength was very low. The Cr passivity layer formed at surface of STS304 made worse strength at commissure in brazing process.

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반도체 칩 접착계면의 모서리 균열에 대한 경계요소 해석 (Boundary Element Analysis for Edge Cracks at the Bonding Interface of Semiconductor Chip)

  • 이상순
    • 마이크로전자및패키징학회지
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    • 제8권3호
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    • pp.25-30
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    • 2001
  • 반도체 칩과 얇은 접착제충의 계면에 존재하는 모서리 균열에 횡방향 인장변형률이 작용하는 경우에 대해 응력확대계수를 조사하고 있다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 경계요소법이 사용되고 있다. 복합 응력확대계수의 크기는 균열의 크기에 의존하지만, 균열이 커지면 일정한 값에 수렴한다. 횡방향 인장변형률이 임계값에 도달하면, 계면 균열은 빠르게 전파되리라고 예상된다.

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Bonding and Etchback Silicon-on-Diamond Technology

  • Jin, Zengsun;Gu, Changzhi;Meng, Qiang;Lu, Xiangyi;Zou, Guangtian;Lu, Jianxial;Yao, Da;Su, Xiudi;Xu, Zhongde
    • The Korean Journal of Ceramics
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    • 제3권1호
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    • pp.18-20
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    • 1997
  • The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

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반도체 칩 접착 계면에 존재하는 모서리 균열 거동에 대한 점탄성 해석 (Viscoelastic Analysis for Behavior of Edge Cracks at the Bonding Interface of Semiconductor Chip)

  • 이상순
    • 한국전산구조공학회논문집
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    • 제14권3호
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    • pp.309-315
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    • 2001
  • 탄성 반도체 칩과 점탄성 접착제층의 계면에 존재하는 모서리 균열에 대한 응력확대계수를 조사하였다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 시간 영역 경계요소법이 사용되었다. 작은 크기의 모서리 균열에 대한 응력확대계수가 계산되었다. 점탄성 이완으로 인해 응력확대계수의 크기는 시간이 경과함에 따라 작아진다.

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