• Composites Research
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• v.36 no.6
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• pp.441-447
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• 2023

Recently, as demand for high-strength, lightweight materials has increased, there has been great interest in joining with metals. In the case of mechanical bonding, such as bolting and riveting, chemical bonding using adhesives is attracting attention as stress concentration, cracks, and peeling occur. In this paper, surface treatment was performed to improve the adhesive strength, and the change in adhesive strength was analyzed. For the adhesive strength test were conducted with Carbon Fiber Reinforced Plastic(CFRP), CR340(Steel), and Al6061(Aluminum), and laser and plasma surface treatment were used. After plasma surface treatment, the adhesive strength improved by 7.3% and 39.2% in CFRP-CR340 and CFRP-Al6061, respectively. CR340-Al6061 was improved by 56.2% in laser surface treatment. Surface free energy(SFE) was measured by contact angle after plasma treatment, and it is thought that the adhesion strength was improved by minimizing damage through a chemical reaction mechanism. For laser surface treatment, it is thought that creates a rough bonding surface and improves adhesive strength due to the mechanical interlocking effect. Therefore, surface treatment is effect to improve adhesive strength, and based on this paper, the long-term fatigue test will be conducted to prevent fatigue failure, which is a representative cause of actual structural damage.

• Current Research on Agriculture and Life Sciences
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• v.15
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• pp.115-122
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• 1997

Grafting is an important skill for the stable supply and production of high quality. However, the shortage of skillful labor has become great difficulty for a mass production of grafting-seedling. In this study, a suitable mechanism for a grafting machine was developed. The following summarize the results of this study: 1. An insertion method was selected for mechanism of the grafting machine without bonding agent, clip, pin. This insertion-grafting method can be applicable to general vegetables and a mass production system. In addition to, this method is suitable for developing the grafting mechanism. 2. Growing point was removed while remaining both cotyledons on rootstock. The productivity of this system was five fold greater than the one of an experienced labor. 3. The rootstock processing was placed on left and scion processing unit was placed on right of the system, then processed rootstock and scion graft by rotating $180^{\circ}$. 4. The efficiency tests on mechanical grafting rate showed 98%.

• Genomics & Informatics
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• v.14 no.3
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• pp.112-124
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• 2016

Solid tumor is generally observed in tissues of epithelial or endothelial cells of lung, breast, prostate, pancreases, colorectal, stomach, and bladder, where several genes transcription is regulated by the microRNAs (miRNAs). Argonaute (AGO) protein is a family of protein which assists in miRNAs to bind with mRNAs of the target genes. Hence, study of the binding mechanism between AGO protein and miRNAs, and also with miRNAs-mRNAs duplex is crucial for understanding the RNA silencing mechanism. In the current work, 64 genes and 23 miRNAs have been selected from literatures, whose deregulation is well established in seven types of solid cancer like lung, breast, prostate, pancreases, colorectal, stomach, and bladder cancer. In silico study reveals, miRNAs namely, miR-106a, miR-21, and miR-29b-2 have a strong binding affinity towards PTEN, TGFBR2, and VEGFA genes, respectively, suggested as important factors in RNA silencing mechanism. Furthermore, interaction between AGO protein (PDB ID-3F73, chain A) with selected miRNAs and with miRNAs-mRNAs duplex were studied computationally to understand their binding at molecular level. The residual interaction and hydrogen bonding are inspected in Discovery Studio 3.5 suites. The current investigation throws light on understanding miRNAs based gene silencing mechanism in solid cancer.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.7
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• pp.579-586
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• 2016

This paper describes kinematic analysis of a 6-degrees-of-freedom (DOF) ultra-precision positioning stage based on a flexure hinge. The stage is designed for processes which require ultra-precision and high load capacities, e.g. wafer-level precision bonding/assembly. During the initial design process, inverse and forward kinematic analyses were performed to actuate the precision positioning stage and to calculate workspace. A two-step procedure was used for inverse kinematic analysis. The first step involved calculating the amount of actuation of the horizontal actuation units. The second step involved calculating the amount of actuation of the vertical actuation unit, given the the results of the first step, by including a lever hinge mechanism adopted for motion amplification. Forward kinematic analysis was performed by defining six distance relationships between hinge positions for in-plane and out-of-plane motion. Finally, the result of a circular path actuation test with respect to the x-y, y-z, and x-z planes is presented.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.3
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• pp.439-446
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• 1997

A traditional notion of composites has been composed as a uniform dispersoid, but now it is proposed without regard to such rule with process development. Functionally Graded Material(FGM) consists of a new material design that is to make intentionally irregular dispersion state. In this study, thermal stress analysis of plasma spraying PSZ/NiCrAlY gradient material was conducted theoretically using a finite-element program. A formations of the model are direct bonding material(NFGM) and FGM with PSZ and NiCrAlY component element. The temperature conditions were $700^{\circ}C$ to 1100.deg. C assuming a cooling-down precess up to room temperature. Fracture damage mechanism was analyzed by the parameters of residual stress.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.407-413
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• 2005

Ion implantation provides a unique way to modify the mechanical, optical and electrical properties of polymer by depositing the energy of ions in the material on the atomic scale. Implantation of ions into the polymers generally leads to a radiation damage, which, in many cases, modifies the properties of the surface and bulk of the material. These modifications result from the changes of the chemical structure caused in their turn by changing the chemical bonding when the incident ions cut the polymer chains, breaks covalent bonds, promotes cross-linking, and liberates certain volatile species. We studied the relation among the linear energy transfer (LET) and changes of surface microstructure and surface resistivity on PPS material using the high current ion implantation technology The surface resistivity of nitrogen implanted PPS decreased to $10^{7}{\Omega}/cm^{2}$ due to the chain scission, cross linking, ${\pi}$ electron creation and mobility increase. In this case, the surface conductivity depend on the 1-dimensional hopping mechanism.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.371-378
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• 1997

The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.342-347
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• 2022

In-situ analyzation and detection of real-time chemical reactions can be a significant part in interpreting the underlying mechanism in very reactive chemical reactions. To do this, first we have designed a microfluidic device (MFD) pattern for observation of synthesis of hierarchical nanostructures based on graphene oxide (GO), conjugating the well-known coupling reaction by which the solution of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC)-mediated coupling is enhanced in the presence of n-hydroxysuccinimide (NHS) to make amide bonding, hereafter called as the EDC coupling. Then, we have manufactured microfluidic devices with multiple tens of micrometer-sized channels that can circulate those nanomaterials to be chemically reacted in the channels. These microfluidic devices were made by negative photo lithography and soft lithography. We showed the possibility of using Raman spectroscopy to reveal the basic mechanism of the energy storage applications.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.39-47
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• 2007

It is investigated how KOH and Rthylenediamine(EDA) treatment conditions on Polyimide film surface affect the interfacial fracture energy between electroless plated Ni and Polyimide film by $180^{\circ}$ peel test. Estimated values of interfacial fracture energy were 24.5 g/mm and 33.3 g/mm for the KOH treatment times under 1 and 5 minutes, respectively, while, those were 31.6 g/mm and 22.3 g/mm for EDA treatment times under 1 and 5 minutes, respectively. Interfacial bonding between electroless plated Ni and Polyimide seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical treatment produces carboxyl and mine functional groups which are closely related the interfacial bonding mechanism. Finally, it is speculated that interfacial fracture energy seems to be controlled by O=C-O bonding near cohesive failure region.