• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.935-942
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• 2002

Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.

• Korean Journal of Environmental Agriculture
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• v.15 no.2
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• pp.167-178
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• 1996

In order to identify PCP glucose conjugates transformed from PCP in soybean and rice cell suspension cultures, the purified metabolites were acetylated, purified twice by HPLC using a normal and a reversed phase column, and then subjected to fast atom bombardment(FAB) mass spectrometric analysis. As were the conjugates, their acetylated derivatives of the glucose conjugates formed at the early stage(48 hr) of metabolism were separated by HPLC into three fractions. FABMS analysis of each fraction revealed that, at least in two fractions, the locations of the spectral peaks were practically coincident with those deducible from the structures of pentachlorophenyl and tetrachlorophenyl ${\beta}-D-glucopyranosides$. Based on information obtained from mass spectral and chromatographic analysis of not only the water-soluble metabolites but also aglycones and glycone, it is concluded that PCP is primarily metabolized to glucose conjugates, which account for more than 50% recovery of the PCP-conveyed radioactivity from the water soluble metabolites : The conjugates are mainly made up of pentachlorophenyl ${\beta}-D-glucopyranoside$, tetrachlorophenyl ${\beta}-D-glucopyranosides$( probably 2 or more isomers), and 2-hydroxy-3,4,5,6-tetrachlorophenyl ${\beta}-D-glucopyranoside$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of Ginseng Research
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• v.32 no.4
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• pp.291-299
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• 2008

The fresh ginseng roots were extracted in aqueous methanol (MeOH), and the obtained extracts were partitioned using ethyl acetate (EtOA), n-butanol (n-BuOH), and water, successively. The repeated silica gel column chromatography for n-BuOH fraction afforded a purified ginsenoside $Rg_1$. The physico-chemical, spectroscopic and chromatographic data of ginsenoside $Rg_1$, such as crystallization characteristics, melting point, specific rotation, infrared spectrometry (IR) data, fast atom bombardment/mass spectrometry (FAB/MS) data, nuclear magnetic resonance (NMR) data, retention factor (Rf) in thin layer chromatography (TLC) experiment, and retention time (r.t.) in HPLC analysis, were measured and compared with those reported in literatures. Especially, the previous literatures reported different data for ginsenoside $Rg_1$ in the $^{1}H-$ and $^{13}C$-NMR experiments. This paper gives the exactly assigned NMR data through 2D-NMR experiments, such as $^{1}H-^{1}H$ correlation spectroscopy (COSY), hetero nuclear single quantum correlation (HSQC), and hetero nuclear multiple bond connectivity (HMBC).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.114-114
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• 1999

Boron nitride (BN)는 매우 뛰어난 물리적, 화학적 성질을 가지고 있는 재료로 많은 연구가 진행되고 있다. hexagonal 형태의 hBN의 경우 큰 전기 저항과 열 전도도를 가지고 있고 열적 안정성을 가지고 있어 반도체 소자에서 절연층으로 쓰일 수 있다. 또한 X-ray와 가시광선을 투과시키기 때문에 X-ray와 가시광선을 투과시키기 때문에 X-ray lithography이 mask 기판으로 사용될 수 있다. Boron-carbon-nitrogen (BCN) 역시 뛰어난 기계적 성질과 투명성을 가지고 있어 보호 코팅이나 X-ray lithography에 이용될 수 있다. 또한 원자 조성이나 구성을 변화시켜 band gap을 조절할 수 있는 가능성을 가지고 있기 때문에 전기, 광소자의 재료로 이용될 수 있다. 본 연구에서는 여러 합성 조건 변화에 따른 hBN 막의 합성 거동을 관찰하고, 카본 농도변화에 따른 BCN 막의 기계적 성질과 구조의 변화, 그리고 실리콘 첨가에 의한 물성 변화를 관찰하였다. BN박막은 실리콘 (100) 기판 위에 r.f. plasma assisted CVD를 이용하여 합성하였다. 합성 압력 0.015 torr, 원료 가스로 BCl3 1.5 sccm, NH3 6sccm을 Ar 15 sccm을 사용하여 기판 bias (-300~-700V)와 합성온도 (상온~50$0^{\circ}C$)를 변화시켜 BN막을 합성하였다. BCN 박막은 상온에서 기판 bias를 -700V로 고정시킨 후 CH4 공급량과 Ar 가스의 첨가 유무를 변화시켜 합성하였다. 또한 SiH4 가스를 이용하여 실리콘을 함유하는 Si-BCN 막을 합성하였다. 합성된 BN 막의 경우, 기판 bias와 합성 온도가 증가할수록 증착속도는 감소하는 경향을 보여 주었다. 기판 bias와 합성온도에 따른 구조 변화를 SEM과 Xray로 분석하였다. 상온에서 합성한 경우는 표면형상이 비정질 형태를 나타내었고, X-ray peak이 거의 관찰되지 않았다. 합성온도가 증가하게 되면 hBN (100) peak이 나타나게 되고 이것은 합성된 막이 turbostratic BN (tBN) 형태를 가지고 있다는 것을 나타낸다. 50$0^{\circ}C$의 합성 온도에서 기판 bias가 -300V에서 hBN (002) peak이 관찰되었고, -500, -700 V에서는 hBN (100) peak만이 관찰되었다. 따라서 고온에서의 큰 ion bombardment는 합성되는 막의 결정성을 저해하는 요소로 작용한다는 것을 확인 할 수 있었다. 합성된 BN 막은 ball on disk type의 tribometer를 이용하여 마모 거동을 관찰한 결과 대부분 1이상의 매우 큰 friction coefficient를 나타내었고, nano-indenter로 측정한 BN막의 hardness는 매우 soft한 막에서부터 10 GPa 정도 까지의 값을 나타내었고, nano-indenter로 측정한 BN 막의 hardness는 매우 soft한 막에서부터 10GPa 정도 까지의 값을 가지며 변하였다. 합성된 BCN, Si-BCN 막은 FT-IR, Raman, S-ray, TEM 분석을 통하여 그 구조와 합성된 상에 관하여 분석하였다. FT-IR 분석을 통해 B-N 결합과 C-N 결합을 확인할 수 있었고, Raman 분석을 통하여 DLC의 특성을 분석하였다. 마모 거동에서는 BCN 막의 경우 0.6~0.8 정도의 friction coefficient를 나타내었고 Si-BCN 막은 0.3이하의 낮은 friction coefficient를 나타내었다. Hardness는 carbon의 함유량과 Ar 가스의 첨가 유무에 따라 각각을 측정하였고 이것은 BN 막 보다 향상된 값을 나타내었다.

• Progress in Medical Physics
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• v.10 no.3
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• pp.151-157
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• 1999

The GafChromic film was used for the dosimetry of a balloon angio catheter filled with the radioisotope HO-166 for endovascular irradiation. The balloon angio catheter was 2 cm long and 3 mm in diameter when inflated. The isotope, Ho-166, was produced by the neutron bombardment using the research reactor in Korea Atomic Energy Research Insititute. Co-60 teletherapy beam was used for making H-D curve for the Gaf-Chromic film. The film dosimetry was measured with a videodensitometer. The radial dose distribution indicated that the absorbed dose dropped to about 20% of the surface dose at the 1 mm away from the balloon surface and at 5 mm position the dose decreased to below 1% of the surface dose. The result also shows that with the specific activity of Ho-l66, 250 mCi/ml it takes 230 seconds to deliver 1200 cGy to the region where is 1mm away from the balloon surface. The concentric isodose curves were also presented. The Ho-166 is an another alternative for endovascualr irradiation to prevent restenosis after PTCA (Percutaneous Trans Coronary Angioplasty)

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.755-759
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• 2013

The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.91-96
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• 2005

O-(3-[$^{18}$F]Fluoropropyl)-L-tyrosine (L-[$^{18}$F]FPT) was synthesized by nucleophilic radiofluorination followed by acidic hydrolysis of protective groups and evaluated with 9 L tumor bearing rat. L-[$^{18}$F]FPT is an homologue of O-(2-[$^{18}$F]fluoroethyl)-L-tyrosine (L-[$^{18}$F]FET) which recently is studied as a tracer for tumor imaging using positron emission tomography (PET). [$^{18}$F]FPT was directly prepared from the precursor of O-(3-ptoluenesulfonyloxypropyl)- N-(tert-butoxycarbonyl)-L-tyrosine methyl ester. FPT-PET image was obtained at 60 min in 9 L tumor bearing rats. The radiochemical yield of [$^{18}$F]FPT was 0-45% (decay corrected) and the radiochemical purity was more than 95% after HPLC purification. The total time elapsed for the synthesis of [$^{18}$F]FPT was 100 min from EOB (End-of-bombardment). A comparison of uptake studies between [$^{18}$F]FPT and [$^{18}$F]FET was performed. In biodistribution, [$^{18}$F]FPT showed similar pattern with [$^{18}$F]FET in various tissues, but [$^{18}$F]FPT showed low uptake in brain. Furthermore, [$^{18}$F]FPT showed higher tumor-to-brain ratio than [$^{18}$F]FET. In conclusion, [$^{18}$F]FPT seems to be more useful amino acid tracer than [$^{18}$F]FET for brain tumors imaging with PET.

• Korean Security Journal
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• no.37
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• pp.29-50
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• 2013

With the recent global threats of terrorism as well as religious conflicts, Northeast Asian countries including South Korea, China, and Japan are experiencing particularly serious security crises as demonstrated by North Korea's threats of nuclear weapons testings and long-range missile launching as well as military provocation toward South Korea such as sinking of ROKS Cheonan and bombardment of Yeonpyeong island and the territorial dispute between China and Japan over Senkaku Islands(Diaoyu Islands). As a result, Park Geun Hye Administration of South Korea and the 2nd Abe Shinzo Cabinet of Japan, both recently established, are making efforts to improve their national security and crisis management policies. One of the key elements of such efforts is the strengthening of National Security Council(NSC) or its equivalent organization as the control tower of national security policy, modeled after the NSC of the United States. This paper compares NSC organization of Korea, the U.S., and Japan and draws policy insights focusing on the current political and national security situation South Korea is facing. Although organizational structure, function, and history of NSC of each country differs, it can be inferred from this comparison that NSC-type of organizations can play an important role as a control tower of security and emergency management policies.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.