• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.81-84
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• 2016

InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emission-wavelength-dependent time-resolved PL (TRPL). The growth T were varied from $440^{\circ}C$ to $520^{\circ}C$ for the formation of InP/InGaP QSs. As growth T increases from $440^{\circ}C$ to $520^{\circ}C$, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at $520^{\circ}C$, and the PL decay becomes fast at 10 K. Emission-wavelength-dependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at $460^{\circ}C$ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of $460^{\circ}C$.

• Publications of The Korean Astronomical Society
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• v.15 no.spc1
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• pp.147-151
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• 2000

Symbiotic stars, believed to be binary systems of a mass-losing giant and a white dwarf with an emission nebula, are known to exhibit very broad wings around Hex that extend to $\~10^3km\;s^{-1}$. The wing formation mechanism is not a settled matter and recently Lee (2000) proposed that Raman scattering of Ly$\beta$ by neutral hydrogen is responsible for the broad H$\alpha$ wings. In this model, it is predicted that. the Hex wings will be polarized depending on the geometric and kinematic distribution of the scatterers relative to the UV emission region. In this paper, we investigate the polarization of Hex wings in symbiotic stars. Noting that many symbiotic stars possess bipolar nebular morphology, we assume that the distribution of neutral scatterers follows the similar pattern with a receding velocity of several tens of km $s^{-1}$ that mimics the expansion of the neutral envelope of the nebula. It is found that the red wing is more strongly polarized than the blue and main part and that the polarization direction is along the equatorial plane. We obtain a typical degree of polarization $\~10$ percent, however, it varies depending on the detailed distribution of H I scatterers We conclude that spectropolarimetry will provide very important information on the origin of the Hex wings.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.940-943
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• 2003

We report the fabrication and the characterization of white organic light-emitting devices consisting of a red-emitting layer of a new DCM derivative doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$) and a blue-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi). The device structure is ITO/PEDOT:PSS/${\alpha}-NPD$ (50 nm)/${\alpha}-NPD$:DCM (5 nm, 0.2 %)/DPVBi (x)/Alq3 (40 nm)/LiF (0.5 nm)/Al. The electroluminescence (EL) spectra consist of two broad peaks around 470 nm and 580 nm with the spectral emission depending on the thickness of DPVBi. The device with the DPVBi thickness of about 20 nm show a white light-emission with the Commission Internationale d'Eclairage(CIE) chromaticity coordinates of (0.33, 0.36). The external quantum efficiency is 2.6% and luminous efficiency is 2.0 lm/W at a luminance of 100 $cd/m^{2}$. The maximum luminance is about 30,270 $cd/m^{2}$ at 13.9 V.

• Journal of The Korean Astronomical Society
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• v.53 no.2
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• pp.35-42
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• 2020

We analyze high dispersion emission lines of the symbiotic nova AG Pegasi, observed in 1998, 2001, and 2002. The Hα and Hβ lines show three components, two narrow and one underlying broad line components, but most other lines, such as H_I, He_I, and He_II lines, show two blue- and red-shifted components only. A recent study by Lee & Hyung (2018) suggested that the double Gaussian lines emitted from a bipolar conical shell are likely to form Raman scattering lines observed in 1998. In this study, we show that the bipolar cone with an opening angle of 74°, which expands at a velocity of 70 km s^-1 along the polar axis of the white dwarf, can accommodate the observed double line profiles in 1998, 2001, and 2002. We conclude that the emission zone of the bipolar conical shell, which formed along the bipolar axis of the white dwarf due to the collimation by the accretion disk, is responsible for the double Gaussian profiles.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.63.4-64
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• 2018

High resolution spectroscopy of the yellow symbiotic star AG Draconis is performed with the Canada-France-Hawaii Telescope to analyse the line profiles of Raman scattered O VI broad emission features at $6825{\AA}$ and $7082{\AA}$ with a view to investigating the wind accretion process from the mass losing giant to the white dwarf. These two spectral features are formed through inelastic scattering of O $VI{\lambda}{\lambda}32$ and 1038 with atomic hydrogen. We find that these features exhibit double-component profiles with red parts stronger than blue ones with the velocity separation of ~ 60 km s-1 in the O VI velocity space. Monte Carlo simulations for O VI line radiative transfer are performed by assuming that the O VI emission region constitutes a part of the accretion flow around the white dwarf and that Raman O VI features are formed in the neutral part of the slow stellar wind from the giant companion. The overall Raman O VI profiles are reasonably fit with an azimuthally asymmetric accretion flow and the mass loss rate ~ 4 ${\times}$ 10^{-7} M_sun yr^{-1}. We also find that additional bipolar neutral regions moving away with a speed ~ 70 km s^{-1} in the directions perpendicular to the orbital plane provide considerably improved fit to the red wing parts of Raman features.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.231-234
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• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.382-387
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• 2000

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.