• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1381-1382
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• 2005

We report improved efficiency in blue electrophosphorescent organic light emitting diodes by introducing an interfacial exciton blocking layer between light emitting layer (EML) and hole transport layer (HTL). Iridium(III) bis [(4,6-di-fluorophenyl)- pyridinato -N,C2']picolinate (FIrpic) was used as blue phosphorescent dopant and JHK6-3 with carbazole and electron transporting group as host and also as the interfacial layer, resulting in drastic increase in quantum efficiency.

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.195-196
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• 2007

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.4
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• pp.422-429
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• 1988

The photoconductive multilayer of Se-As(hole blocking layer)/Se-As-Te (photoconductive layer) /Se-As (layer for supporiting hole transport)/Se-As(layer or controlling total capacitance)/Sb2S3(electron blocking layer) was fabricated and its electrical and optical properties were investigated. The photoconductive multilayer is made of evaporated a-Se as the base material, doped with As and Te to prevent the crystallization of a-Se and to enhance red sensitivity, respectively. The multilayer with good image reproducibility has the following deposition condition. The first layer has the thickness of 250\ulcornerat the deposition rate of 250\ulcornersec. The second layer has the thickness of 800\ulcornerat the deposition rate of 250\ulcornersec. The third layer has the thickness of 125\ulcornerat the deposition rate of 250\ulcornersec. The fourth layer has the thickness of 1700\ulcornerunder the Ar gas ambient of 50x10**-3torr. The image pick-up tube, employing this multilayer demonstrates the following characteristics. The photosensitivity is 0.8, the resolution limit is above 300TV line, and the decay lag is about 7%. And spectral response convers the whole visible range. Therfore the application to color TV camera is expected.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.57-63
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• 2011

Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.381-382
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• 2008

We investigated the properties of DSSC by $TiO_2$-blocking layer formed at several annealing temperatures. At $300^{\circ}C$ and $600^{\circ}C$ anatase and rutile phase of $TiO_2$ were formed, respectively. The characteristics of DSSC was improved by blocking layer annealed at $600^{\circ}C$.

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1235-1241
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• 2008

Membrane separation is extensively used for water/wastewater treatment because of its efficiency separation processes. However, particles in the feed water can deposit and accumulate on the membrane surface to created cake layer. As a consequence, the selectivity of the membrane and flux through the membrane are decreased, which is called fouling/blocking phenomenon. In order to solve fouling problem, we developed a novel membrane named Carbon Whisker Membrane (CWM) which contains vapor-grown carbon fibers/whiskers on the surface of the membrane and a layer of carbon film coated on the ceramic substrate. We firstly employed polymethyl methacrylate (PMMA) as a testing material to investigate the fouling mechanism. The results suggested that Carbon Whiskers on the surface of the membrane can prevent the directly contact between the membrane body and particles so that the fouling/blocking could not occurred easily compared to the membrane without carbon whiskers. We also researched the relationship with the diameter, density of carbon whisker on the membrane surface and total flux of solutions. Finally, we will be able to control the diameter and density of carbon whiskers on the membrane and existence of carbon whiskers on the membrane, it is important factor, might be prevent fouling/blocking in the water treatment.

• Journal of Information Display
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• v.3 no.2
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• pp.6-12
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• 2002

In order to achieve white emission from organic light emitting devices (OLEDs), five distinct structures were fabricated and tested. The white emission was obtained using two different color-emitting materials (yellow from rubrene-doped $Alq_3$ and blue from DPVBi) with or without a carrier-blocking layer. For enhancing the red emission, two types of devices with three-color emitting materials were fabricated. The white emission, close to the CIE coordinate of (0.3,0.3), was achieved by using two blocking layers as well that as without a blocking layer. This paper covers the subject of controlling the location of exciton recombination zone. It has been found that there is a trade-off in that the devices with three color emitting layers do not show as much luminescence efficiency compared to those with two color emitting layers, but rather, show distinct red emission in the resultant emission spectra. The highest power efficiency was measured to be 1.15lm/W at 2,000 $cd/m^2$ for a structure with two color-emitting layers.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.32-38
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• 2001

A new small sized Lateral Trench electrode Insulated Gate Bipolar Transistor(LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device was no more than 19 ㎛. The Latch-up current densities of LIGBT, LTIGBT and the proposed LTEIGBT were 120A/㎠, 540A/㎠, and 1230A/㎠, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.258.2-258.2
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• 2015

염료감응형 태양전지(Dye-Sensitized Solar Cells; DSSC)는 공정비용과 재료가 저렴하여 차세대 태양전지로 각광받고 있다. 특히 투명한 재료를 사용하므로 flexible한 기판을 이용하여 그 적용범위가 넓다. DSSC는 상부전극인 FTO와 전해질의 접촉으로 인해 일부 FTO의 전자가 외부로 나가지 못하고 산화환원 반응에 의해 도로 전해질로 들어갈 확률이 있다. 이로 인해 효율 감소문제를 야기 할 수 있다. 이를 해결하기 위해 FTO위에 여러 물질들을 증착하거나 코팅 등의 많은 연구가 이루어져 왔다. ZnO를 DSSC로 적용한 연구는 많이 이루어졌지만 대부분 공정이 Chemical Vapor Deposition (CVD)으로 진행 되어왔다. 본 연구에서는 FTO위에 ZnO를 진공 공정에 비해 저렴하고 간단한 spin-coating으로 blocking layer를 형성하였다. 그 후 염료에서 여기 된 전자를 FTO로 전달해 주는 역할을 하는 TiO2를 doctor blade방법으로 형성하였다. ZnO는 TiO2하고 전도대와 가전자대의 에너지 준위 차이가 거의 없고, ZnO의 전자 이동도가 TiO2보다 높기 때문에 FTO로 전자를 큰 저항 없이 전달 할 수 있다. 또한 투과율이 좋아 염료까지의 빛의 투과성도 뛰어나다. ZnO blocking layer를 형성하여 FTO에서 전해질로의 전자이동을 막아주는 역할을 하여 DSSC의 performance 향상을 확인하였다. Field Emission Scanning Electron Microscope(FE-SEM)을 통해 FTO/ZnO/TiO2의 계면 및 두께를 확인하였고. DSSC의 특성 분석을 위해 I-V curve, Power conversion efficiency, Impedance spectroscopy를 측정 하였다.