Fabrication of High Sensitive Photoconductive Multilayer Using Se,As and Te and its Application

Se, As 및 Te를 이용한 고감도 다층 광도전막의 제작 및 그 응용

The photoconductive multilayer of Se-As(hole blocking layer)/Se-As-Te (photoconductive layer) /Se-As (layer for supporiting hole transport)/Se-As(layer or controlling total capacitance)/Sb2S3(electron blocking layer) was fabricated and its electrical and optical properties were investigated. The photoconductive multilayer is made of evaporated a-Se as the base material, doped with As and Te to prevent the crystallization of a-Se and to enhance red sensitivity, respectively. The multilayer with good image reproducibility has the following deposition condition. The first layer has the thickness of 250\ulcornerat the deposition rate of 250\ulcornersec. The second layer has the thickness of 800\ulcornerat the deposition rate of 250\ulcornersec. The third layer has the thickness of 125\ulcornerat the deposition rate of 250\ulcornersec. The fourth layer has the thickness of 1700\ulcornerunder the Ar gas ambient of 50x10**-3torr. The image pick-up tube, employing this multilayer demonstrates the following characteristics. The photosensitivity is 0.8, the resolution limit is above 300TV line, and the decay lag is about 7%. And spectral response convers the whole visible range. Therfore the application to color TV camera is expected.