• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.70-74
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• 2008

We are using COS to purpose blocking the excess current and to protect the transformer. But the fuse of COS is melt due to the overload if the excess current flows and it destroy an air severing relations to clear as strong arc happens. Such phenomenon induces an impact ambient noise and it gives the circumstance area resident or pedestrian the fear. Thus, We are the actual circumstances which an ambient noise countermeasure establishment have desired urgently. In this study, we grasp the characteristic of an impact ambient noise which a COS fuse happens the melting and study the method to reduce an impact ambient noise.

• Journal of the Korean Applied Science and Technology
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• v.17 no.3
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• pp.174-177
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• 2000

The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.234-235
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• 2006

The protection relay keeps electric power facilities by using signals of the voltage and current which are input and output terminals of each equipment. Each relay performances protection algorithm by using informations of own protecting zone. To prevent the mal-operation in inrush current, established transformer differential protection method uses the second harmonics as blocking signal. This method is not operate at the initial inrush. However, in case of the parallel operation, if the initial inrush is occurred in one transformer which is generated, the sympathetic inrush Is occurred in adjacent transformer. This paper approach the sympathetic inrush detecting algorithm of a transformer based on agent. Proposed algorithm, when inrush current occurred, distinguish sympathetic inrush or not by using differential current of adjacent transformer. This algorithm have the advantage of the distinguishing initial inrush and sympathetic inrush at operation of parallel transformer

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.831-837
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• 2002

Scaled SONOS transistors have been fabricated by 0.35$\mu\textrm{m}$ CMOS standard logic process. The thickness of stacked ONO(blocking oxide, memory nitride, tunnel oxide) gate insulators measured by TEM are 2.5 nm, 4.0 nm and 2.4 nm, respectively. The SONOS memories have shown low programming voltages of ${\pm}$8.5 V and long-term retention of 10-year Even after 2 ${\times}$ 10$\^$5/ program/erase cycles, the leakage current of unselected transistor in the erased state was low enough that there was no error in read operation and we could distinguish the programmed state from the erased states precisely The tight distribution of the threshold voltages in the programmed and the erased states could remove complex verifying process caused by over-erase in floating gate flash memory, which is one of the main advantages of the charge-trap type devices. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ cycles can be realized by the programming method for a flash-erased type EEPROM.

• Journal of IKEEE
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• v.11 no.4
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• pp.235-238
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• 2007

The planar edge termination techniques of field-ring and deep junction field-ring were investigated and optimized using a two-dimensional device simulator TMA MEDICI. By trenching the field ring site which would be implanted, a better blocking capability can be obtained. The results show that the p-n junction with deep junction field-ring can accomplish near 30% increase of breakdown voltage in comparison with the conventional field-rings. The deep junctionfield-rings are easy to design and fabricate and consume same area but they are relatively sensitive to surface charge. Extensive device simulations as well as qualitative analyses confirm these conclusions.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1993.04a
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• pp.53-53
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• 1993

In considering the mechanism of action of the calcium antagonists, it is important to realize that there are three distinct receptor types and that the new classification divides these three drugs as members of the dihydropyridine, phenylalkylamines and benzothiazipines, respectively. The World Health Organization as well as the International Union of Pharmacology and Cardiology have adopted this classification. Unlike every other class of drugs, such as the alpha and beta adrenergic blocking agents, diuretics, etc., the calcium antagonists need to be thought of as three distinct drug classes. The reason they share some, but not all of the pharmacological profile is that they all act at specific receptor domains present in one large protein of 165 daltons present in all excitable tissue. This protein along with several other subunits make up what is known as the voltage-dependent calcium channel (the so-called "L"type, L-VDCC). The mechanism of action of the three drugs involve first a specfic binding and then an inhibition of the movement of calcium into the cell Some of these drugs, such as diltiazem, may have other interesting intracellular effects perhaps associated with protection of the mitochondria during ischemic insults. The nature of the receptor is being explored by molecular genetic techniques, and we have recently cloned two of the major subunits; some of the data will be presented.

• ETRI Journal
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• v.13 no.4
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.116-119
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• 1994

The characteristics of the Si-SiO$_2$ interface and the degradation in the short channel(L${\times}$W=1.7$\mu\textrm{m}$${\times}$15$\mu\textrm{m}$) SONOSFET nonvolatile memory devices, fabricated on the basis of the existing n-well CMOS processing technology for 1 Mbit DRAM with the 1.2$\mu\textrm{m}$ m design rule, were investigated using the charge pumping method. The SONOSFET memories have the tripple insulated-gate consisting of 30${\AA}$ tunneling oxide 205${\AA}$ nitride and 65${\AA}$ blocking oxide, The acceleration method which square voltage pulses of t$\_$p/=10msec, Vw=+19V and V$\_$E/=-22V continue to be alternatly applied to gale, was used to investigate the degradation of SONOSFET memories with the write/erase cycle. The degradation characteristics were ascertained by observing the change in the energy and spatial distributions of the interface trap density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• The Korean Journal of Physiology and Pharmacology
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• v.10 no.2
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• pp.59-64
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• 2006

The effects of $Zn^{2+}$ on spontaneous glutamate and GABA release were tested in mechanically dissociated rat CA3 pyramidal neurons which retained functional presynaptic nerve terminals. The spontaneous miniature excitatory and inhibitory postsynaptic currents (mEPSCs and mIPSCs, respectively) were pharmacologically isolated and recorded using whole-cell patch clamp technique under voltage-clamp conditions. $Zn^{2+}$ at a lower concentration $(30{\mu}M)$ increased GABAergic mIPSC frequency without affecting mIPSC amplitude, but it decreased both mIPSC frequency and amplitude at higher concentrations $({\ge}300{\mu}M)$. In contrast, $Zn^{2+}$ (3 to $100{\mu}M$) did not affect glutamatergic mEPSCs, although it slightly decreased both mIPSC frequency and amplitude at $300{\mu}M$ concentration. Facilitatory effect of $Zn^{2+}$ on GABAergic mIPSC frequency was occluded either in $Ca^{2+}$-free external solution or in the presence of $100{\mu}M$ 4-aminopyridine, a non-selective $K^{+}$ channel blocker. The results suggest that $Zn^{2+}$ at lower concentrations depolarizes GABAergic nerve terminals by blocking $K^{+}$ channels and increases the probability of spontaneous GABA release. This $Zn^{2+}$-mediated modulation of spontaneous GABAergic transmission is likely to play an important role in the regulation of neuronal excitability within the hippocampal CA3 area.