• Journal of the Korean Institute of Gas
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• v.8 no.3 s.24
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• pp.43-51
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• 2004

In this study, gas permeation and separation characteristics of $CO_2$ and $N_2$ on nano-porous TPABr(Tetrapropylammoniumbromide) templating silica/alumina composite membrane were studied by using GMS (Generalized Maxwell Stefan) model. Since the transport mechanisms of meso-porous alumina support are Knudsen diffusion and viscous diffusion(or poiseulle flow), they can be identified by DGM (dusty gas model). The transport mechanism of TPABr templating silica layer, which would contribute mainly to the separation of $N_2/CO_2$ mixture, showed surface diffusion rather than pore diffusion. Therefore, the oermeationjseparation mechanisms in multi-component suface diffusion were successfully analyzed by the GMS model. In the separation of $N_2/CO_2$ mixture using the composite membrane, $CO_2$, the strongadsorbate, was permeated through the membrane more than Na due to the pore-blocking phenomena of $CO_2$ by adsorption isotherm and solace diffusion.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Korean Journal of Food Science and Technology
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• v.31 no.3
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• pp.771-777
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• 1999

The structural function of three egg membrane layers and cuticle layer, and the effectiveness of 5 film coatings (chitosan, starch, gelatin, dextrin, mineral oil) on the prevention of Salmonella enteritidis penetration was investigated using confocal scanning laser microscopy (CSLM). Diameters of outer membrane fibers, inner membrane fibers and limiting membrane particles in eggshell were $1.5{\sim}7.2$, $0.8{\sim}2.0$ and $0.1{\sim}1.4\;{\mu}m$, respectively and average thicknesses were 10.0, 3.5, $3.6\;{\mu}m$, respectively. Average thickness of cuticle layer was $6.0\;{\mu}m$ and cuticle layer covered $40{\sim}80%$ of total eggshell surface. Average coating films thickness for chitosan, starch, gelatin, dextrin and mineral oil were 2.2, 2.5, 3.9, 3.6 and $5.0\;{\mu}m$, respectively. After immersion process eggshell surface was almost completely covered by coating films. Chitosan coating was most effective among 5 film coatings in inhibiting growth of Salmonella enteritidis. Penetration process of Salmonella enteritidis through eggshell was investigated by multicolor imaging using CSLM and plate counting. Cuticle layer was the most important structure in blocking the penetration. Among 5 film coatings, chitosan showed the best and similar effectiveness with cuticle layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.167-173
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• 2017

In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.

• Membrane and Water Treatment
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• v.9 no.5
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• pp.373-383
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• 2018

Fouling by solids and microorganisms is the major obstacle limiting the efficient use of membrane wastewater treatment. In our previous study, two stages microalgae/membrane filtration system was proposed to treat anaerobic digested palm oil mill effluent (AnPOME). This two stages microalgae/membrane filtration system had showed great potential for the treatment of AnPOME with high removal of COD, $NH_3-N$, $PO_4{^{3-}}$, TSS, turbidity, and colour. However, fouling behavior of the membrane in this two stages microalgae/membrane filtration system was still unknown. In this study, empirical models that describe permeate flux decline for dead-end filtration (pore blocking - complete, intermediate, and standard; and cake layer formation) presented by Hermia were used to fit the experimental results in identifying the fouling mechanism under different experimental conditions. Both centrifuged and non-centrifuged samples were taken from the medium with 3 days RT intervals, from day 0 to day 12 to study their influence on fouling mechanisms described by Hermia for ultrafiltration (UF), nanofiltration (NF), and reverse osmosis (RO) filtration mode. Besides, a more detailed study on the use of resistance-in-series model for deadend filtration was done to investigate the fouling mechanisms involved in membrane filtration of AnPOME collected after microalgae treatment. The results showed that fouling of UF and NF membrane was mainly caused by cake layer formation and it was also supported by the analysis for resistance-in-series model. Whereas, fouling of RO membrane was dominated by concentration polarization.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.509-514
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• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.

• Journal of the Korean GEO-environmental Society
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• v.16 no.10
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• pp.23-32
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• 2015

Most studies on slope collapsed have focused on collapse cases that occur on stabilized slopes in public use. Few studies have been conducted on the collapse characteristics of slopes that occur during construction before stabilization of the slope. In this study, detailed investigation was conducted for 79 sites where slope collapse occurred during or immediately after construction in the Chungcheong region, and their geometrical characteristics, collapse characteristics, design and reinforcement methods were evaluated. As a result of this analysis, it was found that the Chungbuk (CB) area was marked by plane-type collapse and surface layer collapse whereas the Chungnam (CN) area was marked by surface layer collapse or loss of sedimentary rocks. Furthermore, the major collapse factors of the Chungbuk region were joint alternations (53%) and weathering (25%), and the blocking due to multidirectional joints and foliation was also an influencing factor. In the phyllite area, too, the development of joints (55%) was a major factor, but the geological characteristics (36%) of sedimentary rocks such as faults and coaly shale also had considerable effects. Therefore, the geological, climatic, and environment characteristics were found to have affected the stability of slopes.

• Journal of Pharmaceutical Investigation
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• v.36 no.1
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• pp.39-44
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• 2006

Tamsulosin or a salt thereof such as its hydrochloride salt has been known to have an adrenaline ${\alpha}$ receptor blocking action for urethra and prostate areas. It has been widely used as a drug which lowers the prostate pressure and improves urinary disturbance accompanied by prostate-grand enlargement, thus for the treatment of prostatic hyperplasia. To avoid dose-dependent side effects of tamsulosin upon oral administration, the development of sustained-release delivery system is essentially required, that can maintain therapeutic drug levels for a longer period of time. The aim of this study was therefore to formulate sustained-release tamsulosin granules and assess their formulation variables. We designed entric coated sustained-release tamsulosin granules for this purpose. Nano-pores in the outer controlled release membrane were needed in order to obtain initial tamsulosin release even in an acidic environment such as gastric region. In our sustained release osmotic granule system, hydroxypropylmethylcellulose in a drug-containing layer was used as a rate controller. The drug-containing granules were coated with hydroxypropylmethylcellulose phthalate (HPMCP) and Eudragit, along with glycerol triacetate as an aqueous nano-pore former. The release of tamsulosin depended heavily on the type of Eudragit such as RS, RL, NE 30D, used in the formulation of controlled release layer. These results obtained clearly suggest that the sustained-release oral delivery system for tamsulosin could be designed with satisfying drug release profile approved by the Korean Food and Drug Administration.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.