• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.174-180
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• 2012

Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.111-115
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• 2014

Effect of dynamic electric fields on dielectric breakdown behavior in Cu damascene interconnects was investigated. Among the DC, unipolar, and bipolar pulse conditions, the longest dielectric lifetime is observed under the bipolar condition because backward Cu ion drift occurs when the direction of electric field is changed by 180 degrees and Cu contamination is prohibited as a results. Under the unipolar pulse condition, the dielectric lifetime increases as pulse frequency increases and it exceed the lifetime under DC condition. It suggests that the intrinsic breakdown of dielectrics significantly affect the dielectric breakdown in addition to Cu contamination. As the unipolar pulse width decreases, dielectric bond breakdown is more difficult to occur.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.