• 제목/요약/키워드: Bipolar Ionization

검색결과 11건 처리시간 0.021초

분무 및 코로나 방전에 의해 대전된 서브마이크론 입자의 대전량 분포 (Charge Distribution of Submicron Particles Charged by Spray Electrification or Corona Discharge)

  • 이재복;배귀남;황정호;이규원
    • 대한기계학회논문집B
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    • 제25권1호
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    • pp.124-132
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    • 2001
  • This paper reports on the charge distribution measurements of submicron particles for three different charging mechanisms, which are spray electrification, bipolar ionization and corona discharge process, respectively. The number of elementary charges per particle was investigated by classifying and counting of a discrete mobility class. Charge distribution measurements were performed with NaCl particles generated from a collision atomizer for 0.01, 0.1, 1% NaCl solutions. Experimental results show than charge level of atomized NaCl particles is high and decreases with increasing the dissolved ion concentration. The charge level of the atomized NaCl particles can be reduced to that o Boltzmann equilibrium conditions by the bipolar ionization(Po(sup)210 bipolar ionizer). The charge level on NaCl particles passing through the corona discharge reactor is much higher than those of atomized or bipolar ionized NaCl particles. The evaluation of these measurements results in charge distribution of the submicron particles.

A BIPOLAR PLANETARY NEBULA NGC 6537: PHOTOIONIZATION OR SHOCK HEATING?

  • HYUNG SIEK
    • 천문학회지
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    • 제32권1호
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    • pp.55-63
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    • 1999
  • NGC 6537 is an extremely high excitation bipolar planetary nebula. It exhibits a huge range of excitation from lines of [N I] to [Si VI]or [Fe VII], i.e. from neutral atoms to atoms requiring an ionization potential of $\~$167eV. Its kinematical structures are of special interest. We are here primarily concerned with its high resolution spectrum as revealed by the Hamilton Echelle Spectrograph at Lick Observatory (resolution $\~0.2{\AA}$) and supplemented by UV and near-UV data. Photoionization model reproduces the observed global spectrum of NGC 6537, the absolute H$\beta$ flux, and the observed visual or blue magnitude fairly well. The nebulosity of NGC 6537 is likely to be the result of photo-ionization by a very hot star of $T_{eff} \~ 180,000 K$, although the global nebular morphology and kinematics suggest an effect by strong stellar winds and resulting shock heating. NGC 6537 can be classified as a Peimbert Type I planetary nebula. It is extremely young and it may have originated from a star of about 5 $M_{\bigodot}$.

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Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor

  • Sung Ho Ahn;Gwang Min Sun
    • Journal of Radiation Protection and Research
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    • 제48권3호
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    • pp.124-130
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    • 2023
  • Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

Stability Enhancement of Polysilicon Thin-Film Transistors with A Source-tied-to-body

  • Choi, B.D.;Choi, D.C.;Jung, J.Y.;Park, H.H.;Chung, H.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.293-293
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    • 2005
  • The differences between floating and grounded body effects in polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated by making a body contact. The floating body effects such as kink effect, subthreshold slope change, and body current characteristics are explained and modeled by impact ionization, which causes source body turn on, and activates the parasitic bipolar junction transistors (BJTs). These effects become crucial for channel lengths of 4㎛ or shorter. Our data show that making a body contact reduces kink effects significantly and identifies impact ionization mechanism in polysilicon TFTs.

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게이트가 파인 구조를 이용한 SOI MOSFET에서의 항복전압 개선 (Breakdown Voltage Improvement in SOI MOSFET Using Gate-Recessed Structure)

  • 최진혁;박영준;민홍식
    • 전자공학회논문지A
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    • 제32A권12호
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    • pp.159-165
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    • 1995
  • A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

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직접회로용 NPN BJT의 베이스-컬렉터간 역방향 항복전압 추출 알고리즘 (The Algorithm for Calculating the Base-Collector Breakdown Voltage of NPN BJT for Integrated Circuits)

  • 이은구;김철성
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권2호
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    • pp.67-73
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    • 2003
  • The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data

KINEMATICAL PROPERTIES OF PLANETARY NEBULAE WITH WR-TYPE NUCLEI

  • DANEHKAR, ASHKBIZ;STEFFEN, WOLFGANG;PARKER, QUENTIN A.
    • 천문학논총
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    • 제30권2호
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    • pp.163-167
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    • 2015
  • We have carried out integral field unit (IFU) spectroscopy of $H{\alpha}$, [$N{\small{II}}$] and [$O{\small{III}}$] emission lines for a sample of Galactic planetary nebulae (PNe) with Wolf-Rayet (WR) stars and weak emission-line stars (wels). Comparing their spatially-resolved kinematic observations with morpho-kinematic models allowed us to disentangle their three-dimensional gaseous structures. Our results indicate that these PNe have axisymmetric morphologies, either bipolar or elliptical. In many cases the associated kinematic maps for the PNe around hot central stars also reveal the presence of so-called fast low-ionization emission regions.

집적회로용 NPN BJT의 베이스-컬렉터간 역방향 항복전압 계산 방법에 관한 연구 (A study on the method for calculating the base-collector breakdown voltage of NPN BJT for integrated circuits)

  • 이은구;이동렬;김태한;김철성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.137-140
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    • 2002
  • The algorithm for calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data.

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Gate-All-Around SOI MOSFET의 소자열화 (Hot Electron Induced Device Degradation in Gate-All-Around SOI MOSFETs)

  • 최낙종;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제40권10호
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    • pp.32-38
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    • 2003
  • SIMOX 웨이퍼를 사용하여 제작된 GAA 구조 SOI MOSFET의 열전자에 의한 소자열화를 측정·분석하였다. nMOSFET의 열화는 스트레스 게이트 전압이 문턱전압과 같을 때 최대가 되었는데 이는 낮은 게이트 전압에서 PBT 작용의 활성화로 충격이온화가 많이 되었기 때문이다. 소자의 열화는 충격이혼화로 생성된 열전자와 홀에의한 계면상태 생성이 주된 원인임을 degradation rate와 dynamic transconductance 측정으로부터 확인하였다. 그리고 pMOSFET의 열화의 원인은 DAHC 현상에서 생성된 열전자 주입에 의한 전자 트랩핑이 주된 것임을 스트레스 게이트 전압변화에 따른 드레인 전류 변화로부터 확인 할 수 있었다.

승용차용 정전 필터 내의 정전 섬유의 보유 하전 감쇄에 의한 미세 입자 포집효율 변화 (Charge Depletion Effect on Collection Efficiency of an Electret Cabin Air Filter for Submicron Particles)

  • 지준호;강석훈;황정호;배귀남
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집B
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    • pp.71-76
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    • 2001
  • An electret filter is composed of permanently charged electet fibers and is widely used in applications requiring high collection efficiency and low-pressure drop. In this work, the collection efficiency of the filter media used in manufacturing cabin air filters was investigated by using poly-disperse particles when submicron particles are loaded. Long-term experiments were conducted by applying different charging states, which are spray electrification and charge equilibrium by bipolar ionization. In order to investigate on the effect of particle loading in filter media, NaCl particles were generated from 0.1% and 1% solutions by an atomizer. In NaCl 0.1%, the collection efficiency of electret filter decreased and then did not change in equilibrium state. In the case of relative larger particles of NaCl 1%, collection efficiency for the equilibrium charged particles increases due to the particle loading on the filter fibers. Particles charged by spray electrification are small in collection efficiency after equilibrium state and increase of filter media's pressure drop was very low in comparison of the equilibrium charged particles.

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