• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.1
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• pp.124-132
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• 2001

This paper reports on the charge distribution measurements of submicron particles for three different charging mechanisms, which are spray electrification, bipolar ionization and corona discharge process, respectively. The number of elementary charges per particle was investigated by classifying and counting of a discrete mobility class. Charge distribution measurements were performed with NaCl particles generated from a collision atomizer for 0.01, 0.1, 1% NaCl solutions. Experimental results show than charge level of atomized NaCl particles is high and decreases with increasing the dissolved ion concentration. The charge level of the atomized NaCl particles can be reduced to that o Boltzmann equilibrium conditions by the bipolar ionization(Po(sup)210 bipolar ionizer). The charge level on NaCl particles passing through the corona discharge reactor is much higher than those of atomized or bipolar ionized NaCl particles. The evaluation of these measurements results in charge distribution of the submicron particles.

• Journal of The Korean Astronomical Society
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• v.32 no.1
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• pp.55-63
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• 1999

NGC 6537 is an extremely high excitation bipolar planetary nebula. It exhibits a huge range of excitation from lines of [N I] to [Si VI]or [Fe VII], i.e. from neutral atoms to atoms requiring an ionization potential of $\~$167eV. Its kinematical structures are of special interest. We are here primarily concerned with its high resolution spectrum as revealed by the Hamilton Echelle Spectrograph at Lick Observatory (resolution $\~0.2{\AA}$) and supplemented by UV and near-UV data. Photoionization model reproduces the observed global spectrum of NGC 6537, the absolute H$\beta$ flux, and the observed visual or blue magnitude fairly well. The nebulosity of NGC 6537 is likely to be the result of photo-ionization by a very hot star of $T_{eff} \~ 180,000 K$, although the global nebular morphology and kinematics suggest an effect by strong stellar winds and resulting shock heating. NGC 6537 can be classified as a Peimbert Type I planetary nebula. It is extremely young and it may have originated from a star of about 5 $M_{\bigodot}$.

• Journal of Radiation Protection and Research
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• v.48 no.3
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• pp.124-130
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• 2023

Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.293-293
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• 2005

The differences between floating and grounded body effects in polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated by making a body contact. The floating body effects such as kink effect, subthreshold slope change, and body current characteristics are explained and modeled by impact ionization, which causes source body turn on, and activates the parasitic bipolar junction transistors (BJTs). These effects become crucial for channel lengths of 4㎛ or shorter. Our data show that making a body contact reduces kink effects significantly and identifies impact ionization mechanism in polysilicon TFTs.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.67-73
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• 2003

The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.163-167
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• 2015

We have carried out integral field unit (IFU) spectroscopy of $H{\alpha}$, [$N{\small{II}}$] and [$O{\small{III}}$] emission lines for a sample of Galactic planetary nebulae (PNe) with Wolf-Rayet (WR) stars and weak emission-line stars (wels). Comparing their spatially-resolved kinematic observations with morpho-kinematic models allowed us to disentangle their three-dimensional gaseous structures. Our results indicate that these PNe have axisymmetric morphologies, either bipolar or elliptical. In many cases the associated kinematic maps for the PNe around hot central stars also reveal the presence of so-called fast low-ionization emission regions.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.137-140
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• 2002

The algorithm for calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.71-76
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• 2001

An electret filter is composed of permanently charged electet fibers and is widely used in applications requiring high collection efficiency and low-pressure drop. In this work, the collection efficiency of the filter media used in manufacturing cabin air filters was investigated by using poly-disperse particles when submicron particles are loaded. Long-term experiments were conducted by applying different charging states, which are spray electrification and charge equilibrium by bipolar ionization. In order to investigate on the effect of particle loading in filter media, NaCl particles were generated from 0.1% and 1% solutions by an atomizer. In NaCl 0.1%, the collection efficiency of electret filter decreased and then did not change in equilibrium state. In the case of relative larger particles of NaCl 1%, collection efficiency for the equilibrium charged particles increases due to the particle loading on the filter fibers. Particles charged by spray electrification are small in collection efficiency after equilibrium state and increase of filter media's pressure drop was very low in comparison of the equilibrium charged particles.