• International Journal of Internet, Broadcasting and Communication
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• v.16 no.2
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• pp.161-168
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• 2024

As the size of big data models grows, distributed training is emerging as an essential element for large-scale machine learning tasks. In this paper, we propose ParamHub for distributed data training. During the training process, this agent utilizes the provided data to adjust various conditions of the model's parameters, such as the model structure, learning algorithm, hyperparameters, and bias, aiming to minimize the error between the model's predictions and the actual values. Furthermore, it operates autonomously, collecting and updating data in a distributed environment, thereby reducing the burden of load balancing that occurs in a centralized system. And Through communication between agents, resource management and learning processes can be coordinated, enabling efficient management of distributed data and resources. This approach enhances the scalability and stability of distributed machine learning systems while providing flexibility to be applied in various learning environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.48-48
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• 2009

최근 빠른 동작속도와 고 집적도를 얻기 위해 metal oxide semiconductor field effect transistor (MOSFET) 의 크기는 계속 해서 줄어들고 있다. 동시에 게이트의 절연층도 얇아지게 된다. 절연층으로 사용되는 $SiO_2$ 의 두께가 2nm 이하로 얇아 지게 되면 터널링에 의해 누설 전류가 발생하게 된다. 이 문제를 해결하기 위해 $SiO_2$ 를 대체할 고유전체 물질의 연구가 활발하다. 고유전체 물질 중에는 $ZrO_2,\;Al_2O_3,\;HfO_2$ 등이 많이 연구 되어 왔다. 하지만 유전상수 이외에 band gap energy, thermodynamic stability, recrystallization temperature 등의 특성이 좋지 않아 대체 물질로 문제점이 있다. 이를 보안하기 위해 산화물을 합금과 결합시키면 서로의 장점들이 합쳐져 기준들을 만족하는 물질을 만들 수 있고 $HfAlO_3$가 그 중 하나이다. Al를 첨가하는 이유는 문턱전압을 낮추기 위해서다. $HfAlO_3$는 유전상수 18.2, band gap energy 6.5 eV, recrystallization temperature 800 $^{\circ}C$이고 열역학적 특성이 안정적이다. 게이트 절연층은 전극과 기판사이에 적층구조를 이루고 있어 이방성인 드라이 에칭이 필요하고 공정 중 마스크물질과의 선택비가 높아야한다. 본 연구는 $HfAlO_3$박막을 $BCl_3/Ar,\;N_2/BCl_3/Ar$ 유도결합 플라즈마를 이용해 식각했다. 베이스 조건은 RF Power 500 W, DC-bias -100 V, 공정압력 15 mTorr, 기판온도 40 $^{\circ}C$ 이다. 가스비율, RF Power, DC-bias, 공정 압력에 의한 마스크물질과 의 선택비를 알아보았다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.4
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• pp.635-641
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• 1998

This paper presents development of a small size LNA operating at 824 ∼ 849 MHz used for a receiver of a CELLULAR CDMA Base station and a transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and is suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows above 35dB in gain and below 0.9dB in noise figure, 18.6dBm P1dB power, a typical two tone IM3, -31.17dB with single carrier backed off 10dB from P1dB.

• Ocean and Polar Research
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• v.38 no.3
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• pp.247-257
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• 2016

The inter-comparison project for seawater salinity measurements, in which 25 laboratories from 16 countries took part, was conducted by JCOMM (Joint WMO/IOC Technical Commission for Oceanography and Marine Meteorology) for the first time in 2014. Two seawater samples of different salinity values ranging from 30-35 and 20-25 for Sample A and Sample B respectively and which had sufficient homogeneity and stability were distributed to all participants. Participants measured the salinity in their own laboratories at least 3 times and reported the results. Statistical treatments were applied to the results to assess discrepancies among laboratories. 20 out of the 25 laboratories used laboratory salinometers and statistics for this group were denoted as belonging to group ${\alpha}$; while 5 out of the 25 laboratories used hand-held measuring instruments and statistics for this group were denoted as belonging to group ${\beta}$. Bias described as discrepancy among laboratories in group ${\alpha}$ was within ${\pm}0.001$ and expanded uncertainty (k = 2) was in the vicinity of 0.002. The bias and the uncertainty of Korea Institute of Ocean Science and Technology (KIOST), in group ${\alpha}$, were 0.000 and 0.002, respectively. The biases of group ${\beta}$ were greater than group ${\alpha}$ because of constraints related to instrument accuracy. Biases from 3 laboratories in group ${\beta}$ exceed the accuracy specification of the corresponding instruments. Considering that the uncertainty of Standard Seawater (SSW) is of the order 0.001 to 0.002, the inter-comparison results show that 16 laboratories among the 25 laboratories made high quality measurements, largely indistinguishable from one another.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.190-195
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• 2000

This paper presents the fabrication of the LNA which is operating at 2.13∼2.16 GHz for IMT-2000 lot-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a transistor keep the low noise characteristics and drop the input reflection coefficient of amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network The amplifier consist of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using above design technique are presented more than 30 dB in gain P$\_$ldB/ 17 dB and less than 0.7 dB in noise figure, 1.5 in input$.$output SWR(Standing Wave Ratio).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.80-83
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• 2017

In this paper, the X-band reconfigurable frequency selective surface having flexible geometry was proposed. The proposed RFSS is composed of patterns of cross-shaped loop with inductive stub, which can control the frequency response for C-Band and X-band by ON/OFF state of PIN diode. To minimize the parasitic effect and to obtain the high level of isolation between the unit cell of FSS and the bias circuit, we designed the grid type bias line on bottom layer through via hole. The measured transmission characteristics show good agreement with the simulation results and good stability of frequency response for different incident angles and curvatures of surface.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.91.1-91.1
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• 2014

IGRINS (the Immersion GRating INfrared Spectrometer) is a high resolution wide-band infrared spectrograph developed by the Korea Astronomy and Space Science Institute (KASI) and the University of Texas at Austin (UT). This spectrograph has H-band and K-band science cameras, both of which use Teledyne's $2.5{\mu}m$ cutoff $2k{\times}2k$ HgCdTe HAWAII-2RG CMOS science grade detectors. Teledyne's cryogenic SIDECAR ASIC boards and JADE2 USB interface cards were installed to control these detectors. We performed lab experiments and test observations to optimize and evaluate the detector systems of science cameras. In this presentation, we describe a process to optimize bias voltages and way to reduce pattern noise with reference pixel subtraction schemes. We also present measurements of the following properties under optimized settings of bias voltages at cryogenic temperature (70K): read noise, Fowler noise, dark current, and reference-level stability, full well depth, linearity and conversion gain.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.221-225
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• 1999

In this paper, a new type of predistortion linearizer has been studied. It employs a series feedback amplifier with a large source inductance as a predistortion linearizer, which provides positive amplitude and negative phase deviations for input Power and can compensate for AM-AM and AM-PM distortions of power amplifier. This predistortion lineariaer consists of only one CaAs FET, large source inductor, input output matching networks and bias circuits. Because of its simple circuit, the linear can be operated over a broad bandwidth and has good thermal stability The characteristics of this linearizer can be easily tuned using source inductor, its gate bias condition. In fabricated linearizer, the third-order intermodulation distortion(IMD) for main amplifier alone is 10.61dBc, and the $IM_3$ for main amplifier with predistorter is 21.91dBc. Therefore, the $IM_3$ characteristic results an improvement of approximately 11dB.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.2-54.2
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.