• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2001년도 춘계연구발표회 논문개요집
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• pp.130-131
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• 2001

• Journal of Magnetics
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• 제7권2호
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2023년도 학술발표회
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• pp.161-161
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• 2023

Bias correction of values is a necessary step in downscaling coarse and systematically biased global climate models for use in local climate change impact studies. In addition to univariate bias correction methods, many multivariate methods which correct multiple variables jointly - each with their own mathematical designs - have been developed recently. While some literature have focused on the inter-comparison of these multivariate bias correction methods, none have focused extensively on the effect of diverse configurations (i.e., different combinations of input variables to be corrected) of climate variables, particularly high-dimensional ones, on the ability of the different methods to remove biases in uni- and multivariate statistics. This study evaluates the impact of three configurations (inter-variable, inter-spatial, and full dimensional dependence configurations) on four state-of-the-art multivariate bias correction methods in a national-scale domain over South Korea using a gridded approach. An inter-comparison framework evaluating the performance of the different combinations of configurations and bias correction methods in adjusting various climate variable statistics was created. Precipitation, maximum, and minimum temperatures were corrected across 306 high-resolution (0.2°) grid cells and were evaluated. Results show improvements in most methods in correcting various statistics when implementing high-dimensional configurations. However, some instabilities were observed, likely tied to the mathematical designs of the methods, informing that some multivariate bias correction methods are incompatible with high-dimensional configurations highlighting the potential for further improvements in the field, as well as the importance of proper selection of the correction method specific to the needs of the user.

• 한국세라믹학회지
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• 제29권1호
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.

• 전자공학회논문지A
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• 제29A권9호
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2020년도 학술발표회
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• pp.120-120
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• 2020

Spatial precipitation data is one of the essential components in modeling hydrological problems. The estimation of these data has achieved significant achievements own to the recent advances in remote sensing technology. However, there are still gaps between the satellite-derived rainfall data and observed data due to the significant dependence of rainfall on spatial and temporal characteristics. An effective approach based on the Convolutional Neural Network (CNN) model to correct the satellite-derived rainfall data is proposed in this study. The Mekong River basin, one of the largest river system in the world, was selected as a case study. The two gridded precipitation data sets with a spatial resolution of 0.25 degrees used in the CNN model are APHRODITE (Asian Precipitation - Highly-Resolved Observational Data Integration Towards Evaluation) and PERSIANN-CDR (Precipitation Estimation from Remotely Sensed Information using Artificial Neural Networks). In particular, PERSIANN-CDR data is exploited as satellite-based precipitation data and APHRODITE data is considered as observed rainfall data. In addition to developing a CNN model to correct the satellite-based rain data, another statistical method based on standard deviations for precipitation bias correction was also mentioned in this study. Estimated results indicate that the CNN model illustrates better performance both in spatial and temporal correlation when compared to the standard deviation method. The finding of this study indicated that the CNN model could produce reliable estimates for the gridded precipitation bias correction problem.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.237-237
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• 2003

교환바이어스(exchange bias)현상은 강자성과 반강자성의 접합계면에서 강한 상호 교환결합력에 의해 발생하는 것으로 알려져 있다. 이 현상은 1956년 Meiklejohn과 Bean에 의해 CoO층으로 둘러싸인 Co 입자에서 발견된 이후[1], 강자성과 반강자성의 접합계면을 가지는 다층박막에서의 교환바이어스에 대한 연구가 진행되어왔다[2-6]. 이는 강자성/반강자성 박막의 교환바이어스 특성을 이용하여, 강자성 박막의 스핀방향을 고정시킬 수 있기 때문이다. 이러한 교환바이어스 특성은 하드드라이브의 고밀도 자기헤드소자 및 비휘발성 자기메모리소자에 응용되어지는 등 경제적 가치를 갖는 기술적인 면과 교환바이어스라는 자기특성의 학문적인 가치로 인해 이 분야에 대한 집중적인 투자와 연구가 이루어지고 있다. 최근에는 교환바이어스 현상의 원인과 형성기구에 대한 연구가 활발히 진행되고 있다. 그러나 강자성과 반강자성 박막의 단거리 상호 교환결합력에 의한 교환바이어스 현상은, 계면의 원자구조, 자기구조 및 각자성층의 여러 가지 인자들에 대해서 지속적으로 연구되고 있다.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 1994년도 춘계공동학술대회논문집; 창원대학교; 08월 09일 Apr. 1994
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• pp.437-450
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• 1994

The problem of testing for a change in the parameter of a stochastic process is particularly important in simulation studies. In studies of the steady state characteristics of a simulation model, it is important to identify initialization bias and to evaluate efforts to control this problem. A simulation output have the characteristics of chaotic behavior because of sensitive dependence on initial conditions. For that reason, we will apply Lyapunov exponent for diagnosis of chaotic motion to simulation output analysis. This paper proposes two methods for diagnosis of steady state in simulation output. In order to evaluate the performance and effectiveness of these methods using chaos theory, M/M/I(.inf.) queueing model is used for testing point estimator, average bias.