• 전자공학회논문지D
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• 제35D권4호
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• pp.101-108
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• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

• Journal of Magnetics
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• 제20권4호
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• pp.347-352
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• 2015

The magnetoelectric (ME) characteristics for Terfenol-D/PZT laminate composite dependence on bias magnetic field is investigated. At low frequency, ME response is determined by the piezomagnetic coefficient $d_{33,m}$ and the elastic compliance $s_{33}^H$ of magnetostrictive material, $d_{33,m}$ and $s_{33}^H$ for Terfenol-D are inherently nonlinear and dependent on $H_{dc}$, leading to the influence of $H_{dc}$ on low-frequency ME voltage coefficient. At resonance, the mechanical quality factor $Q_m$ dependences on $H_{dc}$ results in the differences between the low-frequency and resonant ME voltage coefficient with $H_{dc}$. In terms of ${\Delta}E$ effect, the resonant frequency shift is derived with respect to the bias magnetic field. Considering the nonlinear effect of magnetostrictive material and $Q_m$ dependence on $H_{dc}$c, it predicts the low-frequency and resonant ME voltage coefficients as a function of the dc bias magnetic field. A good agreement between the theoretical results and experimental data is obtained and it is found that ME characteristics dependence on $H_{dc}$ are mainly influenced by the nonlinear effect of magnetostrictive material.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.655-661
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• 2013

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

• Journal of information and communication convergence engineering
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• 제8권1호
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of Magnetics
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• 제17권4호
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• pp.245-250
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• 2012

Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.

• Journal of Magnetics
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• 제10권4호
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• 한국자기학회지
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• 제21권2호
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• pp.52-55
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• 2011

스핀전달토크는 나노구조에서 자성상태를 제어하는데 유용한 수단이다. 자기터널접합에서 스핀전달토크는 자성물질층의 자화가 이루는 평면에 평행한 성분과 수직인 성분으로 나눌 수 있다. 이중 평행한 성분의 스핀전달토크의 성질은 상당히 잘 알려져 있으나, 수직인 성분의 스핀전달토크의 성질에 대해서는 여전히 이견이 많다. 비대칭 자기터널접합에서의 최근 실험에서, 수직전달토크의 전압 의존성이 전압의 이차항 성분뿐만 아니라 일차항 성분도 가짐을 보고하였다. 하지만 물질 변수에 대한 의존성은 여전히 잘 알려지지 않았다. 이 논문에서는 비대칭 자기터널접합에서의 스핀전달토크의 전압의존성을, 강자성층의 스핀 갈라짐 에너지와 일함수의 차이, 그리고 페르미 에너지를 변화시켜 가면서 체계적인 조사를 하였다.

• 한국유기농업학회지
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• 제32권1호
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• pp.25-37
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• 2024

This study is to apply behavioral economics-an economics that studies actual human behavior based on cognitive psychology-to the farming decision-making process of onion and garlic farmers. Of behavioral economic theories, dual system theory and prospect theory (value function), heuristic and bias were surveyed and examined in the field. The reference point of farmers was farming experience of the previous year, and so they showed reference dependence and anchoring heuristic, not rational thinking on production cost plan. And they showed status quo bias that cultivated continuously the previous year or the present crop. This status quo bias is related to loss aversion propensity. Farmers did not usually change cultivating crops, in other words, they showed diminishing sensitivity-insensitive to those that the more revenue or loss was increased. This diminishing sensitivity is related to loss aversion propensity and status quo bias. Also, farmers had representativeness heuristic because they regarded auction price of Garakdong wholesale market as the standard price level despite various prices by production region. And farmers had the affect heuristic that they depended on producers' organization data more than the state-run research institute ones about cultivation intentions and actual situations.

• 한국군사과학기술학회지
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• 제12권5호
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• pp.585-589
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• 2009

In this paper, passive direction-finding localization of the emitter using noisy line-of-bearing (LOB) measurements is considered. The performance of the LOB-based emitter localization using linear LSE algorithm is given. The Dependence of the performance on bias of emitter location and sensor trajectory is illustrated using the numerical results.

• Progress in Superconductivity
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• 제14권2호
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• pp.96-98
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• 2012

Bias current dependence of a superconducting strip photon detector is studied in the wavelength range of 405 to 1310 nm. The detector is made of an $MgB_2$ meander pattern with the line width of 135 nm and thickness of 10 nm. At 1310 nm, the detection efficiency exponentially decreases as the bias current decreases. While at 405 nm, the detection efficiency almost saturates in the high bias current region. These features suggest that the intrinsic detection efficiency of the $MgB_2$ detector is high at 405 nm.