• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.565-568
• /
• 1987

In order to determine the standard composition of ZnO varistor with higher nonlinearity, various contents of $MnO_2$, $Co_2O_3$ were added to ZnO-1.0m/o $Bi_2O_3$ system. Also, samples that contained small amount of Sb, Si-oxides in standard composition determined before were fabricated. As a result, the standard composition of higher nonlinearity-oriented ZnO varistor was shown as ZnO-1.0 m/o $Bi_2O_3$-1.0m/o $MnO_2$-1.0m/o $Co_2O_3$ and $Sb_2O_3$ largely enhanced nonlinear exponent and nonlinear resistance, hut SiO largely enhanced nonlinear exponent only.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.238.1-238
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.160-160
• /
• 2002

• Journal of the Korean Magnetics Society
• /
• v.8 no.2
• /
• pp.62-66
• /
• 1998

We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

• Korean Journal of Crystallography
• /
• v.8 no.2
• /
• pp.149-153
• /
• 1997

ZnO varistor based on ZnO-Bi2O3-Co3O4-MnCO3-Cr2-O3-Sb2O3 system with Sb2O3 contents were studied for grain size variation and microstructure properties. The composition of pure ZnO varistor was observed composition was inhibited owing to formation of Zn7Sb2O12 spinel phase and did not observed abnrmal grain growth. With Sb2O3 contents, the grain sizes of ZnO varistor were remarkably decreased and the microstructure had the distribution of dense and homogeneous grains.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.05a
• /
• pp.23-23
• /
• 2001

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.18-18
• /
• 2001

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.198-200
• /
• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.963-967
• /
• 2001

The effects of the sintering additives such as Bi$_2$O$_3$and V$_2$O$_{5}$ on the microwave dielectric and sintering properties of ZnTiO$_3$system were investigated. Densities of >97% of the theoretical densities have been attained for ZnTiO$_3$at the sintering temperature range of 870~90$0^{\circ}C$ with Bi$_2$O$_3$and V$_2$O$_{5}$ additions of $_3$were obtained with 0.6wt% Bi$_2$O$_3$and 0.5wt% V$_2$O$_{5}$; Qxf$_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -43 PPm/$^{\circ}C$. In order to improve temperature coefficient of resonance frequency, TiO$_2$was added to the above system. The optimum amount of TiO$_2$was 15mo1% when sintered at 87$0^{\circ}C$, at which we could obtain following results ; Qxf$_{o}$ = 44,700 GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.>.EX>.>.>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.561-565
• /
• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.