• Korean Journal of Materials Research
• /
• v.5 no.2
• /
• pp.251-258
• /
• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.190-190
• /
• 2013

여러 화합물 반도체 중 $Sb_2Te_3$, $Bi_2Te_3$, 그리고 $Bi_2Se_3$과 같은 $A_2B_3$형 화합물은 열전소자에 적용가능성이 좋아서 광범위하게 연구되고 있다. $A_2B_3$형 화합물 중 특히 $Bi_2Te_3$는 단독 또는 다른 원소와 합금하여 태양전지, 열전소자, 그리고 상-변환 소자 등으로 이용된다. $Bi_2Te_3$ 박막을 형성하는 여러 방법 중에 전기화학적인 전착법은 박막의 조성 및 두께 제어가 용이하고 비용적 측면이나 형성속도 측면에서도 타 방법에 비하여 유리하기 때문에 주목을 많이 받고 있다. 하지만 전기화학적인 전착법에 의해 얻어진 박막은 점 결함, 높은 내부에너지와 결정성이 낮다는 단점이 있다. 본 연구에서는 도금층의 결정성 향상을 위하여 계면 활성제인 CTAB를 첨가하여 $Bi_2Te_3$ 박막을 형성하였다. $Bi_2Te_3$ 박막에 미치는 계면 활성제의 영향을 알아보기 위하여 결정성 및 전기, 열전 특성을 분석하였다. 또한, 도금된 박막을 다양한 온도에서 열처리 하여 열처리가 $Bi_2Te_3$ 박막의 전기 및 열전 특성에 미치는 영향을 알아보았다.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.2
• /
• pp.114-118
• /
• 2017

Bismuth telluride ($Bi_2Te_3$) and its alloys are well-known thermoelectric materials for ambient temperature applications. In this study, the dissolved Bi-Te precursor solution was used to synthesis metallic $Bi_2Te_3$ powder via ultrasonic spray pyrolysis and reduction process. The droplets of the Bi-Te precursor solution were decomposed to Bi-Te oxide powders by ultrasonic spray pyrolysis. The spherical $Bi_2Te_3$ powders were synthesized by reduction reaction in atmosphere of hydrogen gas at the temperature above $375^{\circ}C$ for 6h. The reduced $Bi_2Te_3$ powders have a mean particle size of $1.5{\mu}m$. The crystal structure of the powder was evaluated by X-Ray diffraction(XRD), and the microstructure with size and shape powders was observed by fieldemission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM).

• Korean Journal of Materials Research
• /
• v.9 no.4
• /
• pp.349-354
• /
• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.166-166
• /
• 2003

경제적 효율의 발전을 원칙으로 하는 종래의 틀을 넘어서서 환경공생형의 새로운 에너지 시스템의 개발에 대한 요구가 증대되어 지고 있다. 이러한 시대적 흐름에 부응하는 여러 가지 신재료의 개발에 관한 연구가 이루어지고 있다. 그 중에서 전기를 열로 열을 전기로 변환 시킬 수 있어서 폐열의 이용 및 전자냉각기술 등에 이용 가능한 열전변환재료가 커다란 기대를 모으고 있다. 열전재료는 사용온도 영역에 따라 여러 가지 재료가 개발되어 지고 있으며, 현재 상온부근 및 저온영역에서 응용 가능한 재료로써 Bi$_2$Te$_3$계 고용체에 관한 연구가 활발하게 진행되고 있다. 예를 들어, Bi$_2$Te$_3$ 고용체에서 Bi를 Sb으로 치환한 p-type의 (Bi,Sb)$_2$Te$_3$ 고용체와 Te을 Se으로 치환한 n-type의 Bi$_2$(Te,Se)$_3$ 고용체에 관한 연구가 이루어지고 있다. 최근 들어 Kutasov등은 종래에 P-type의 열전재료로써 높은 특성을 나타내는 것으로 알려진(Bi,Sb)$_2$Te$_3$ 고용체가 Sb의 치환량과 Te의 도핑량을 잘 조절하면 n-type의 높은 열전 특성을 나타낸다고 보고하였다. 본 연구에서는 과잉으로 첨가된 Te이 n-type (Bi,Sb)$_2$Te$_3$ 고용체에 미치는 영향을 보다 체계적으로 조사하기 위한 기초단계의 연구로써 Te을 0-0.9at.%로 과잉 첨가하여 제조한 고용체 및 소결체의 미세구조에 관하여 조사하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.1
• /
• pp.33-38
• /
• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.151-152
• /
• 2006

Bi-Te thermoelectric powder was fabricated by mechanical alloying method for 1 to 10 hours under vacuum in planetary mill. We investigated the properties of mechanically alloyed Bi-Te powder by thermal analysis, X-ray diffractometer and FESEM with EDS Bi-Te raw material was formed to $Bi_2Te_3$ phase at condition over 3.5 hours of mechanical alloying time.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.4
• /
• pp.363-369
• /
• 1994

Bimuth telluride base thermoelectrics are prepared by AC current applied hot pressing method. It is possible to minimize the defects arising from the vaporization of Te, thanks to the very short processing time compared to the single crystal growing method. The optimum conditions for the AC applied hot pressing of 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ thermoelectrics are sintering at $400^{\circ}C$, for 2 minutes, under 1500 kgf/$\textrm{cm}^2$, with the particle size of $125 to 250 {\mu}m$, range of powder. The resultant Z value (figure of merit) was $2.2{\times}10^{-3}/K$.

• Journal of the Korean Ceramic Society
• /
• v.52 no.1
• /
• pp.1-8
• /
• 2015

Thermoelectric (TE) technology is becoming increasingly important in applications of solid-state cooling and renewable energy sources. $Bi_2Te_3$-based TE materials are widely used in small-scale cooling and temperature control applications; however, higher levels of TE performance are required for new applications such as large-scale cooling (e.g., domestic refrigerators or air conditioners) and for highly efficient power generation system. Recently, the TE performance of $Bi_2Te_3$-based materials has been remarkably enhanced by the introduction of nanostructuring technologies which can be used to prepare TE raw materials. Because it takes into account the theoretical and experimental characteristics, nanostructuring has been shown to be one of the most promising ways to realize the simultaneous control of the electronic and thermal transport properties. In this review, emphasis is placed on bulk-type nanostructured $Bi_2Te_3$-based TE materials. Nanostructuring technologies for enhanced TE performance are summarized, and a few important strategies are presented.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1995.02a
• /
• pp.67-67
• /
• 1995