• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.204-210
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• 2000

The control of dissolved aluminum concentration in the hot dip zinc galvanizing bath is greatly important in producing galvannealed steel sheets. The purpose of present study is to provide basic data for measurement of the aluminum concentration in site in hot dip zinc bath at the temperature of $460^{\circ}C\~500^{\circ}C$ using $CaF_2$ solid electrolyte sensor with three kinds of reference electrode. Good workability and stability of the sensor were confirmed with the $Bi+BiF_3$ reference electrode from the emf measurement. In order to measure the aluminum concentration in Zn-Al bath, the galvanic cell of fluorine ion was constructed with $CaF_2$ solid electrolyte as follows; $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$. The emf measurement was made at the temperature of $460\pm10^{\circ}C$ in the Zn-Al bath. The following correlationship between aluminum concentration and emf was obtained by the least square regression analysis; $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.561-565
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• 2014

Thermoelectric materials have been the topic of intensive research due to their unique dual capability of directly converting heat into electricity or electrical power into cooling or heating. Bismuth telluride ($Bi_2Te_3$) is the best-known commercially used thermoelectric material in the bulk form for cooling and power generation applications In this work we focus on the large scale synthesis of nanostructured undoped bulk nanostructured $Bi_2Te_3$ materials by employing a novel bottom-up solution-based chemical approach. Spark plasma sintering has been employed for compaction and sintering of $Bi_2Te_3$ nanopowders, resulting in relative density of $g{\cdot}cm^{-3}$ while preserving the nanostructure. The average grain size of the final compacts was obtained as 200 nm after sintering. An improved NS bulk undoped $Bi_2Te_3$ is achieved with sintered at $400^{\circ}C$ for 4 min holding time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.62-66
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• 1998

We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

• Journal of Magnetics
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• v.5 no.1
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• pp.16-18
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• 2000

The garnets $Nd_{1-x}Bi_xY_2Fe_5O_{12}$ ($\chi$=0.0, 0.25, 0.5, 0.75 and 1.0) have been studied by x-rays, electron microscopy, ferromagnetic resonance, vibrating sample magnetometer and Mossbauer spectroscopy, Ultra-fine polycrystalline cubic samples have been prepared by a melt-salt routed sol-gel method. The Mossbauer spectra consist of two sets of six-line patterns corresponding to $Fe^{3+}$ at the tetrahedral 24(d) and octahedral 16(a) sites. Magnetic hyperfine fields of $Nd_{0.5}Bi_{0.5}Y_2Fe_5O_{12}$ at 12 K are found to be 548 kOe (octahedral site) and 475 kOe (tetrahedral site), respectively, It is found that Debye temperatures for the tetrahedral and octahedral sites of $Nd_{0.75}Bi_{0.25}Y_2Fe_5O_{12}$ are $\theta_{tet}=436$ K and $\theta_{oct}=285$ K, respectively, The iron ions at both sites are highly covalent ferric. The Nel temperature decreases linearly with Bi concentration, from 630 K fur $\chi$=0.0 to 600 K for $\chi$=1.0, suggesting that the superexchange interaction for the Nd-O-Fe link is stronger than that for the Bi-O-Fe link. As a consequence, the coercivity of $Nd_{1-x}Bi_xY_2Fe_5O_{12}$ drastically decreases and the magnetization remains almost constant as x increases.

• International Journal of Computer Science & Network Security
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• v.23 no.3
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• pp.177-186
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• 2023

Hyperspectral imaging technology is one of the most efficient and fast-growing technologies in recent years. Hyperspectral image (HSI) comprises contiguous spectral bands for every pixel that is used to detect the object with significant accuracy and details. HSI contains high dimensionality of spectral information which is not easy to classify every pixel. To confront the problem, we propose a novel RGB channel Assimilation for classification methods. The color features are extracted by using chromaticity computation. Additionally, this work discusses the classification of hyperspectral image based on Domain Transform Interpolated Convolution Filter (DTICF) and 3D-CNN with Bi-directional-Long Short Term Memory (Bi-LSTM). There are three steps for the proposed techniques: First, HSI data is converted to RGB images with spatial features. Before using the DTICF, the RGB images of HSI and patch of the input image from raw HSI are integrated. Afterward, the pair features of spectral and spatial are excerpted using DTICF from integrated HSI. Those obtained spatial and spectral features are finally given into the designed 3D-CNN with Bi-LSTM framework. In the second step, the excerpted color features are classified by 2D-CNN. The probabilistic classification map of 3D-CNN-Bi-LSTM, and 2D-CNN are fused. In the last step, additionally, Markov Random Field (MRF) is utilized for improving the fused probabilistic classification map efficiently. Based on the experimental results, two different hyperspectral images prove that novel RGB channel assimilation of DTICF-3D-CNN-Bi-LSTM approach is more important and provides good classification results compared to other classification approaches.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.489-494
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• 2001

In this thesis, the microstructure and electrical properties of ZnO varistors were investigated according to ZnO varistors with various formulation. A∼E's ZnO varistor ceramics were exhibited good density, 95% of theory density and low porosity, 5%, wholly. The average grain size of A-E's ZnO varistor ceramics exhibited 11.89$\mu\textrm{m}$, 13.57$\mu\textrm{m}$, 15.44$\mu\textrm{m}$, 11.92$\mu\textrm{m}$, 12.47$\mu\textrm{m}$, respectively. Grain size of C's ZnO varistor is larger and grain size of A and D's are smaller than other varistors. In the microstructure, A∼E's ZnO varistor ceramics sintered at l130$^{\circ}C$ was consisted of ZnO grain(ZnO), spinel phase(Zn$\sub$2.33/Sb$\sub$0.67/O$_4$), Bi-rich Phase(Bi$_2$O$_3$) and inergranular phase, wholly. Reference voltage of A∼E's ZnO varistor sintered at 1130$^{\circ}C$ decreased in order D, E > A > B > C's ZnO varistors. Nonlinear exponent of varistors exhibited high characteristics, above 30, wholly. Consequently, C's ZnO varistor exhibited good nonlinear exponent, 68. Lightning impulse residual voltage of A, B, C and E's ZnO varistors suited standard characteristics, below 12kV at current of 5kA.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.177-183
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• 1999

Ultrafine $CoFe_{1.9}Bi_{0.1}O_4$ particles were fabricated by using a sol-gel method and their magnetic and structural properties were investigated with an x-ray diffractometer (XRD), a vibrating sample magnetometer (VSM), and a M$\"{o}$ssbauer spectrometer. The result of x-ray diffraction and M$\"{o}$ssbauer spectroscopy showed that the powders fired at and above 523 K had only cubic spinel structures. M$\"{o}$ssbauer spectra measurements showed that the powders annealed at 523,723 and 823 K possessed ferrimagnetic nature and paramagnetic nature due to superparamagnetism, simultaneously at room temperature and the powders annealed at and above 923 K behaved ferrimagnetically. In the case of the powder annealed at 923 K, the lattice constant was $a_0=8.398$\pm$0.005{\AA}$ and the hyperfine fields were $H_{hf}(A)=479kOe,\; H_{hf}(B)=502kOe$. The isomer shifts indicate that the iron ions are ferric at tetrahedral[A] and octahedral sites [B], respectively. The magnetization as a function of annealing temperature increased as increasing annealing temperature. The largest coercivity values were $H_C=1368\;Oe$ AT 923 K annealing temperature. In the case of the powder annealed at 1123 K, the magnetization value was $M_S=75\;emu/g$ and this value was similler to that of $CoFe_2O_4$.Fe_2O_4$.

• Electrical & Electronic Materials
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• v.19 no.12
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• pp.20-27
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• 2006