• Electrical & Electronic Materials
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• v.10 no.5
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• Korean Journal of Crystallography
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• v.2 no.2
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• pp.32-40
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• 1991

The effects of compositional variation, rotation speel and pulling rate on the growth of optical quality Bi120e02(1 crystals were examined. It was found to flatten the shape of crystal-melt interface for yowing a single crystals less than about 30mm in diameter at the rotation speed of 50rpm. Diameter of crystals with flat interface was increased as the pulling rate. The precipitation of Bi40e3012 phase set limits to pulling rate of BGO crystals. Precipitate-free BGO crystals were grown under pulling rate of 2mm l hr which released the stress resulted from too hi어 Pulling rate, and from 6. IBi203·GeO2 batch composition obtained by addition of 0.1 mole Bi203 into Bi-deficient melts to fill up the deficiency resulted from gradual volatilization of Bi2O). The pale-yellow colored crystals had good quality in that dislocation density was less than 103pits/cm, and it also exhibited transmittance of 70% and optical activity of 23°/mm. and SAW velosity was measured 1700m/sec on 111 cut 110 propagating BGO crystals. The SAW filter with electrode thickness of 9.8um was fabricated by using the electron beam and dry etching technique, it makes Bi12GeO20 devices intersting for color TV IF with half device size.

• Journal of the Korean Ceramic Society
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• v.23 no.2
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• pp.13-20
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• 1986

Composite polycrystals including ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystal which have needlelike regular structure are useful for the high resolution optical devices. For the purpose of obtaining the composite polycrystals described above the melts of eutectic composition in the three eutectic systems including $6Bi_2O_3$.$SiO_2$ composition were unidirectionally solidified at a rate of 0.05 and 0.25 cm/h under a thermal gradient of 10$0^{\circ}C$/m. Composite polycrystals of relatively regular structure in which needlelike ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystals were arrayed in parallel with $2Bi_2O_3$.$B_2O_3$ crystal matrix were obtained when the eutectic melt of $6Bi_2O_3$.$SiO_2 -2Bi_2O_3$.$B_2O_3$ system was solidified at a rate of 0.25 cm/h. Partial structural irregularity however was found in the obtained composite polycrystals.

• Transactions of the Korean hydrogen and new energy society
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• v.5 no.1
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• pp.41-49
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• 1994

Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.

• Progress in Superconductivity and Cryogenics
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• v.7 no.2
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• pp.31-34
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• 2005

There are many kinds of high temperature superconducting (HTS) application using Bi-2223 tape which is the most commercialized HTS material. Also, resistive superconducting fault current limiters (SFCLs) have been developed using many kinds of superconducting material such as YBCO thin film, Bi-2212 bulk and so on. However, SFCL using Bi-2223 tape has never been developed. This paper deals with the feasibility study on SFCL using Bi-2223 wire. The over-current behaviors of Bi-2223 short-length sample were measured. To make the resistive SFCL, two small-scale bifilar winding modules using 7m Bi-2223 wire were fabricated; i.e. solenoid type bifilar coil and pancake type one. The short-circuit tests of the coils were successfully performed up to 16 V$_{rms}$ From these tests, the current limiting capabilities of Bi-2223 bifilar coils were confirmed and current limiting performances between two winding types were compared. In addition, the feasibility of resistive SFCL using another HTS wire, i.e. YBCO coated conductor, was also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.296-296
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• 2008

대용량의 초전도 전력기기에 사용되는 도체는 일반적으로 대전류를 통전할 수 있는 도체를 필요로 한다. 특히 SMES와 같이 펄스적으로 운전하는 코일에서 도체의 전류 용량을 증가시키면서 동시에 교류손실을 줄이는 방법으로 도체를 제조하기 위해서는 여러 가닥의 소선을 꼬아서 만드는 러더포드 케이블로 제조할 필요가 있으며 이를 위해서는 소선이 원형 상태를 유지하고 있어야 한다. Bi-2212 고온초전도선은 유일하게 원형 상태에서의 응용이 가능하므로 이 선의 개발 및 케이블 공정 개발은 매우 중요하다. 본 연구에서는 Bi-2212 고온초전도 소선을 사용하여 Rutherford 케이링을 할 수 있는 장치를 개발하였으며, 이 장치를 이용하여 복합 다심의 Bi-2212 초전도 소선을 8본, 20본 그리고 30본의 Bi-2212 러더포드 케이블을 110 m 길이까지 가공하였다. 제조한 러더포드 케이블 시료를 열처리에서의 부분용융 온도를 변화시키는 것으로 열처리 조건을 연구하였고, 77K, 64K 그리고 4.2K에서 임계전류 특성을 조사하였다. 또한 초전도 소선의 미세 조직을 관찰을 통하여 초전도 특성을 향상시키고자 하였다. 그래서 30본의 Bi-2212 러더포드 케이블에서 4.2K 온도로 환산하였을 때 5000 A를 초과하는 특성을 얻을 수 있었다.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Journal of Korean Neurosurgical Society
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• v.58 no.4
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• pp.373-378
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• 2015

Objective : To determine the advantages of parietal approach compared to Kocher's point approach for spontaneous, oval-shaped intracerebral hemorrhage (ICH) with expansion to the parietal region. Methods : We divided patients into two groups : group A had burr holes in the parietal bone and group B had burr holes at Kocher's point. The hematoma volume, Glasgow coma scale (GCS) score, and modified Barthel Index (mBI) score were calculated. At discharge, we evaluated the patients' Glasgow outcome scale (GOS) score, modified Rankin Scale (mRS) score, motor grade, and hospitalization duration. We evaluated the patients' mBI scores and motor grades at 6 months after surgery. Results : The hematoma volume in group A was significantly less than that in group B on postoperative days 1, 3, 5, 7, 14, and 21. Group A had significantly higher GCS scores than did group B on postoperative days 1 and 3. Group A had higher mBI scores postoperatively than did group B, but the scores were not significantly different. No differences were observed for the GOS score, mRS score, motor grade at discharge, or duration of hospitalization. The mBI score of group A at 6 months after surgery was significantly higher, and more patients in group A showed muscle strength improvement. Conclusion : In oval-shaped ICH with expansion to the parietal region, the parietal approach is considered to improve the clinical symptoms at the acute phase by removing the hematoma more effectively in the early stages. The parietal approach might help promote the long-term recovery of motor power.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.20-26
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• 2016

The bioelectrical impedance (BI) for the young and the elderly was measured using bioelectrical impedance spectroscopy (BIS). First, while applying a current of $600{\mu}A$ to the foot and hand, BI was measured at 50 frequencies ranging from 5 to 1000 kHz. The BI for young subjects was considerably lower than that for old subjects since young subjects have more lean mass (hydration). The prediction marker was 0.74 for young subjects and 0.78 for old subjects. Second, a Cole-Cole diagram was obtained for young subjects and old subjects, indicating the different characteristic frequencies. At 50 kHz, the average phase angle was $7.8^{\circ}$ for young subjects whereas that was $6.1^{\circ}$ for old subjects. Third, BIVA was analyzed for young subjects and old subjects. The vector length was 210.89 [${\Omega}/m$] for young subjects and 326.12 [${\Omega}/m$] for old subjects. At 50 kHz, the resistance (R/H) and the reactance ($X_C/H$) divided by height were 208.94 [${\Omega}/m$] and 28.68 [${\Omega}/m$] for young subject, and 324.33 [${\Omega}/m$] and 34.09 [${\Omega}/m$] for old subjects.

• Current Applied Physics
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• v.18 no.12
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.