• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.342-347
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• 2016

We investigated the effect of $Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3$ (BNKT) modification on the ferroelectric and electric-field-induced strain (EFIS) properties of lead-free $0.97Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3-0.03LaFeO_3$ (BNKTLF) ceramics as a function of BNKT content (x= 0, 0.1, 0.2, 0.3, 0.5, and 1). BNKT-modified BNKTLF powders were synthesized using a conventional solid-state reaction method. As the BNKT content x increased from 0 to 1 the normalized electric-field-induced strain ($S_{max}/E_{max}$) was observed to increase at relatively low fields, i.e., below the poling field. Moreover, BNKTLF-30BNKT showed about 460 pm/V as low as at 3 kV/mm, which is a considerably high value among the lead-free systems reported so far. Consequently, it was confirmed that ceramic-ceramic composite, a mixture of an ergodic relaxor matrix and embedded ferroelectric seeds, is a salient way to make lead-free piezoelectrics practical with enhanced EFIS at low field as well as less hysterical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.1-7
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• 2021

This study investigated the structural, dielectric, ferroelectric, and strain properties of (0.98-x)Bi1/2Na1/2TiO3-0.02BiFeO3-xSrTiO3 (BNT-BF-100xST, x＝0.20, 0.22, 0.24, 0.26, and 0.28). All samples were successfully synthesized using the conventional solid-state reaction method and sintered at 1,175℃ for 2 h. The average grain size of the BNT-BF-100x ceramics decreased with increasing ST content. Furthermore, we observed that the ferroelectric- relaxor transition temperature (TF-R) decreased with increasing ST content, which eventually vanished in the BNT-BF-24ST ceramics. The results indicated that a ferroelectric to relaxor phase transition could be induced by ST modification. Consequently, a large electromechanical strain of 633 pm/V at 4 kV/mm was observed for the BNT-BF-26ST ceramics. These results imply that our materials have the competitive advantage of larger strain under lower operating field conditions compared with other BNT-based lead-free piezoelectric ceramics. We expect that BNT-BF-ST lead-free piezoelectric ceramics are promising candidates as a novel ternary BNT-based system and can find potential applications in actuators.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.1-6
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• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.177-183
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• 1999

Ultrafine $CoFe_{1.9}Bi_{0.1}O_4$ particles were fabricated by using a sol-gel method and their magnetic and structural properties were investigated with an x-ray diffractometer (XRD), a vibrating sample magnetometer (VSM), and a M$\"{o}$ssbauer spectrometer. The result of x-ray diffraction and M$\"{o}$ssbauer spectroscopy showed that the powders fired at and above 523 K had only cubic spinel structures. M$\"{o}$ssbauer spectra measurements showed that the powders annealed at 523,723 and 823 K possessed ferrimagnetic nature and paramagnetic nature due to superparamagnetism, simultaneously at room temperature and the powders annealed at and above 923 K behaved ferrimagnetically. In the case of the powder annealed at 923 K, the lattice constant was $a_0=8.398$\pm$0.005{\AA}$ and the hyperfine fields were $H_{hf}(A)=479kOe,\; H_{hf}(B)=502kOe$. The isomer shifts indicate that the iron ions are ferric at tetrahedral[A] and octahedral sites [B], respectively. The magnetization as a function of annealing temperature increased as increasing annealing temperature. The largest coercivity values were $H_C=1368\;Oe$ AT 923 K annealing temperature. In the case of the powder annealed at 1123 K, the magnetization value was $M_S=75\;emu/g$ and this value was similler to that of $CoFe_2O_4$.Fe_2O_4$.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.176-178
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.44-45
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• 2017

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.255-255
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.34-35
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• 2015