• 대한기계학회논문집B
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• 제20권8호
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• pp.2611-2625
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• 1996

A numerical method on multi-block technique by Bi-CGSTAB(Bi-Conjugate Gradient STABilized) solver has been proposed. The present multi-block technique can reduce the numerical manipulation greatly because the common regions at the interface of each block are not necessary. In order to test the computational performance of present multi-block technique, the flow characteristics in a T type duct system and a N type duct system have been investigated by three kinds of methods such as the single-block method, the previous multi-block technique and the multi-block technique with Bi-CGSTAB solver. The results indicated that the required CPU time by present multi block technique was shorter than that of other two numerical methods and the convergency history was shown very stable at the present multi-block technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.70-73
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• 2006

High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 arid 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권3호
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• pp.105-108
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• 2003

In this work, a Voltage-to-Frequency Converter(VFC) in which the output frequency is proportional to the input voltage is proposed. To obtain the temperature stable characteristics of the VFC circuit is designed by BiCMOS technology. The output frequency range is 24KHz to 65KHz and the difference between simulated and calculated values is less than about 5% for this range of output frequency. The temperature variation of sample output frequencies is less than $\pm$0.5% in the temperature range $-25^{\circ}C$ to 75$^{\circ}C$.

• 한국정보통신학회논문지
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• 제11권8호
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• pp.1552-1557
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• 2007

본 논문에서는 밴드갭 기준전압을 이용하여 동작온도에 무관한 PWM(Pulse Width Modulation) 제어 회로를 설계 하였다. 동작온도에 무관한 PWM 제어기는 BiCMOS 기술을 이용하여 동작온도에 무관한 기준전압과 동작온도에 따라 변화하는 두개의 기준 전압을 이용하였다. 설계되어진 회로는 공급전압 3.3volt를 사용하였으며, 출력 주파수는 1MHz이다. 회로의 시뮬레이션 결과 동작 온도가 $0^{\circ}C$에서 $70^{\circ}C$까지 변화할 때, PWM 제어기의 출력 펄스폭의 변화는 상온에 비하여 +0.86%에서 -0.38%였다.

• Coupled systems mechanics
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• 제5권2호
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• pp.101-126
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• 2016

Seismic structural fragility constitutes an important step for performance based seismic design. Lateral load-resisting structural members are often analyzed under one component base excitation, while the effect of bi-directional shaking is accounted per simplified rules. Fragility curves are constructed herein under real bi-directional excitation by a simple extension of the conventional Incremental Dynamic Analysis (IDA) under uni-directional shaking. Simple SODF systems, parametrically adjusted to different periods, are examined under a set of near-fault and far-fault excitations. Consideration of bi-directional interaction appears important for stiff systems. Further, the study indicates that the peak ground accelertaion, velocity and displacement (PGA, PGV and PGD) of accelerogram are relatively stable and efficient intensity measures for short, medium and long period systems respectively. '30%' combination rule seems to reasonably predict the fragility under bi-directional shaking at least for first mode dominated systems dealt herein up to a limit state of damage control.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• 전산구조공학
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• 제28권3호
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• pp.49-53
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• 2015

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.13.2-13.2
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• 2006