• 제목/요약/키워드: Bi-phase

검색결과 873건 처리시간 0.025초

확산법에 의한 Bi-2223 초전도상의 제조 및 성장기구에 관한 연구 (Study on the fabrication and the growth mechanism of Bi-2223 superconducting phase by diffusion method)

  • 최성환;최효상;한태희;황종선;한병성
    • E2M - 전기 전자와 첨단 소재
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    • 제7권4호
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    • pp.281-288
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    • 1994
  • According to spread volume of B(BiPbCuO) layer, composition ratio and each stage of sintering process, we studied stability of high Tc superconductor phase and generation and growth movement of superconducting phase. The dual layer composed of SrCaCuO and BiPbCuO compound were prepared to develop the Bi-2223 superconductor[108K] through interaction and diffusion during sintering process. The dual layer samples were sintered at 830.deg. C for 0-210 hours. From the result, the optimum conditions were : spread volume(A:B=1:0.6), sintering time(210h) and composition ratio(A:S $r_{2}$C $a_{2}$C $u_{2}$- $O_{x}$, B:B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$) at 830.deg. C.. C.C.C.

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공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석 (Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition)

  • 안인순;천민우;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Crystal Structure of High Temperature Phase in ${Bi_2}{O_2}$-layered Perovskites ${ABi_2}{M_2}{O_9}$(A=Pb, Sr, M=Nb, Ta)

  • Kim, Jeong-Seog;Cheon, Chae-il;Lee, Chang-Hee;Choo, Woong-Gil
    • 한국세라믹학회지
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    • 제38권11호
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    • pp.962-966
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    • 2001
  • Crystal structure of PbBi$_2$Nb$_2$$O_{9}$ and $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ were determined by Rietveld method using neutron diffraction data in the temperature range of 300 K~1273K. Phase transition temperature were measured from the dielectric permittivitytemperature curve. The PbBi$_2$Nb$_2$$O_{9}$ showed a phase transition at about 810 K. In the Sr-excess compound $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ the phase transition was suppressed down to room temperature. Several structural models were tested by the Rietiveld refinement. Based on the \`R\` values and the structural parameters, the B2cb model is judged to be the most feasible one for the high temperature phase at above 810 K of the PbBi$_2$Nb$_2$$O_{9}$. The $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ sample was refined to show the most reliable results by the Am2m model.sults by the Am2m model.

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Co를 첨가한 $ZnO-Bi_2O_3-Sb_2O_3$ 바리스터의 소결 및 전기적 특성 (Sintering and the Electrical Properties of Co-doped $ZnO-Bi_2O_3-Sb_2O_3$ Varistor System)

  • 김철홍;김진호
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.186-193
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    • 2000
  • Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

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BMP-2를 함유한 2상 알지네이트 담체를 이용한 골수줄기세포의 골분화 (Osteogenic Differentiation of Bone Marrow Stem Cell using Bi-phase Alginate Scaffold Including BMP-2)

  • 임현주;김학태;오은정;김태정;김한도;최진현;정호윤
    • Archives of Plastic Surgery
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    • 제37권3호
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    • pp.207-212
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    • 2010
  • Purpose: The object of this study is to develop a novel BMP-2 delivery system for continuous osteogenic differentiation and to induce osteogenesis of stem cells using a bi-phase alginate carrier in vitro. Methods: Alginate nanoparticle loaded BMP-2 was prepared by the reverse emulsification-diffusion technique. Physical properties and release profiles of alginate carriers were measured by Instron and ELISA kit, respectively. Cell viability and alkaline phosphate activity of hBMSCs differentiation was also evaluated by MTS and Metra BAP assays, respectively. Results: Optimal concentration for bi-phase alginate carrier was determined as 2 wt% by evaluating mechanical and biological properties, and differentiation of BMSCs for bone regeneration. The 2% bi-phase alginate carrier had the lowest initial and final release ratio. In addition, the 2% bi-phase alginate carrier had a little higher ALP activity than the homogeneous carrier. An improved controlled release profile was obtained by combining alginate hydrogel with lyophilized particles. Conclusion: Bi-phase alginate carrier has many advantages such as biocompatibility and controlled release capability. It is expected to be effective as a scaffold and carrier in bone tissue engineering.

동시 스퍼터 법에 의한 Bi 박막의 초전도 특성 (Superconducting Characteristics of Bi Thin Film by Co-Deposition)

  • 이희갑;박용필;이준응
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.278-280
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    • 2001
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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동시 스퍼터 법에 의한 Bi 박막의 초전도 특성 (Superconducting Characteristics of Bi Thin Film by Co-deposition)

  • 이희갑;박용필;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.278-280
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    • 2001
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

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$(Na_{1/2}Bi_{1/2})TiO_3-PbTiO_3$ 고용체의 강유전 상전이 거동 (Ferroelectric Phase Transition Behavior in $(Na_{1/2}Bi_{1/2})TiO_3-PbTiO_3$ System)

  • 홍국선;조서용;박승익
    • 한국세라믹학회지
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    • 제32권8호
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    • pp.915-921
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    • 1995
  • The morphotropic phase boundary and phase transitions of the solid solutiion system, (1-x)(Na1/2Bi1/2)TiO3-PbTiO3+xPbTiO3 were studied by investigating changes in crystal structure, variations in permittivity with temperature, and calorimetric behavior. It was observed that the morphotropic phase boundary (MPB) of this solid solutiion system was at near 14 mol% of PbTiO3. Compositions containing less than 10mol% PbTiO3 (x<0.1) exhibited a phase transition, i.e. ferroelectric rhombohedrallongrightarrowparaelectric paraelectric cubic, with increasing temperature. Composition containing more than 14 mol% PbTiO3 (x 0.14) showed a phase transition from ferroelectric tetragonal to paraelectric cubic. In the composition range of 0.1$\varepsilon$ (T) curve, which coincided with a phase transition from ferroelectric rhombohedral to an intermediate phase, was also found.

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직류링크 전류를 이용한 인터리브드 양방향 컨버터의 상전류 불균형 보상 방법 (Compensation of Unbalanced Phase Currents in Interleaved Bi-directional Converter with DC Link Current Sensed)

  • 한정호;최유현;송중호
    • 조명전기설비학회논문지
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    • 제28권8호
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    • pp.90-97
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    • 2014
  • This paper presents a compensation method of unbalanced phase currents in interleaved bi-directional converters. Phase currents in interleaved bi-directional converter are apt to be unbalanced due to circuit parameter error and switch operation difference. This problem causes the switch element failure and the reduced efficiency of the converter. Therefore, it is necessary that a certain balance control algorithm is provided in interleaved bi-directional converter system. In this paper, a balance control algorithm based on the circular chain control method is proposed. Further, in order to reduce the number of phase current sensors, this paper shows a simple method in which phase currents can be extracted indirectly through a DC-link current sensor in both charging and discharging modes. The validity and the effectiveness of the proposed phase currents balance control algorithm are illustrated through the simulation results.

열처리 조건에 따른 Bi계 초전도체에서 상 생성 과정에 대한 연구 (A Study on the Phase Formation Process in Bi-system Superconductor with Heat Treatment Conditions)

  • 정진인;이준웅;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.221-223
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    • 1999
  • In this work, samples were manufactured variously by changing conventional calcining and sintering conditions and we tried the utilization by making the heat treatment time, which is demanded to high-Tc phase formation, much shorter. We found out optimal heat treatment conditions with the analysis on formation process at superconducting phase in term of the change of calcining and sintering time and then, examined X-ray diffraction(XRD) patterns, scanning electron microscope(SEM) measurement and energy dispersive X-ray spectrometer(EDX) of the samples manufactured under heat treatment conditions which we suggest here. As a result, 2223 high-$T_c$, phase of (Bi,Pb)SrCaCuO superconductor starting with ($Bi_l$ xPbx,)$_2$$Sr_2$$Ca_2$$Cu_3$$O_y$, composition was formed from 1 hr sintering sample at temperature nearby melting point and also the completed sample with calcining and sintering time of 9 hr was formed high-$T_c$.low-$T_c$ phase appearing in sight above the critical temperature of liquid $N_2$.

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