• 제목/요약/키워드: Bi-metal

검색결과 352건 처리시간 0.029초

Ferroelectricity of Bi-doped ZnO Films Probed by Scanning Probe Microscopy

  • Ben, Chu Van;Lee, Ju-Won;Kim, Jung-Hoon;Yang, Woo-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.323-323
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    • 2012
  • We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

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동시 소성된 저항/저온 동시 소성 세라믹(LTCC) 이중층의 캠버에 영향을 미치는 인자 (Factors Influencing the Camber of Cofired Resistor/Low Temperature Cofired Ceramics (LTCC) Bi-Layers)

  • 홍옥연;민석홍
    • 한국재료학회지
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    • 제33권12호
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    • pp.537-549
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    • 2023
  • The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

반사 손실 합성법을 이용한 GSM900/DCS1800/PCS1900 내장형 안테나 설계 (Internal Antenna Design for GSM900/DCS1800/PCS1900 Using an Overlap of Return Loss)

  • 장병찬;김채영
    • 한국전자파학회논문지
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    • 제18권5호
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    • pp.503-510
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    • 2007
  • 본 논문은 GSM900, DCS1800, PCS1900 대역을 동시에 만족시킬 수 있는 삼중 대역 안테나 설계에 관한 연구이다. 제안된 구조는 소형화와 견고성을 위해 유전체 위에 2개의 금속 가지를 접어서 만든 형태이다. 금속 가지의 길이를 조정하여 반사 손실을 합성시켜서 광대역을 구현하였다. 안테나의 반사 손실은 모의 실험을 통해 구하였으며, 이를 측정값과 비교하였다. 모의 실험은 상용 툴인 Ansoft사의 HFSS 9를 사용하였고, 수치 비교 결과, 원하는 주파수 대역에서 -10 [dB] 이하의 반사 손실을 얻었다. 또한, 안테나의 이득과 복사 패턴을 원거리장 측정 시스템을 사용하여 전파 무반사실에서 측정하였다. 측정 결과 최대 이득은 3.0 [dBi], 평균 이득은 -1.0 [dBi] 이상의 양호한 특성을 보였으며, 대역 내 2개의 주파수의 복사 패턴은 서로 유사하였다.

메탈 커버를 방사소자로 이용한 광대역 MIMO 안테나 (Broadband MIMO Antenna Using the Metal Cover Radiator)

  • 김병철;박민길;손태호
    • 한국전자파학회논문지
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    • 제26권9호
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    • pp.769-776
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    • 2015
  • 본 논문에서는 메탈 커버를 방사소자의 일환으로 적용한 광대역 MIMO 안테나를 설계하고, 이를 PCB 기판에 구현한다. 제안 안테나는 모노폴 안테나와 모노폴로부터 커플링 급전을 받는 IFA 및 메탈 커버 방사체로 구성된다. 따라서 모노폴 안테나와 IFA 및 메탈 커버가 동시에 동작하는 하이브리드 안테나가 된다. 제안 안테나는 LTE class 13/ LTE class 14/ CDMA/ GSM900/ DCS/ PCS/ W-CDMA/ LTE class 40/WiFi 대역에서 VSWR 3:1 이하의 조건을 만족하였다. 상하 대각선 급전 MIMO 안테나의 최대 포락선 상관계수는 0.186이다. 방사 측정 결과, 전 대역에서 -5.14~-1.28 dBi의 평균 이득과 30.87~74.48 %의 효율을 얻었다.

Metal Oxide/Metal Bi-layer for Low-Cost Source/Drain Contact of Pentacene OTFT

  • Moon, Han-Ul;Yoo, Seung-Hyup
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.571-574
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    • 2009
  • Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

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Sol-Gel Processing for Preparation of Metal Oxide Films

  • Korobova Natalya;Soh, Dea-Wha
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.259-264
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    • 2000
  • Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

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Bi-directional Two Terminal Switching Device with Metal/P/N+or Metal/N/P+ Junction

  • Kil, Gyu-Hyun;Lee, Sung-Hyun;Yang, Hyung-Jun;Lee, Jung-Min;Song, Yun-Heub
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.386-386
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    • 2012
  • We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

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Mechanics model of novel compound metal damper based on Bi-objective shape optimization

  • He, Haoxiang;Ding, Jiawei;Huang, Lei
    • Earthquakes and Structures
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    • 제23권4호
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    • pp.363-371
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    • 2022
  • Traditional metal dampers have disadvantages such as a higher yield point and inadequate adjustability. The experimental results show that the low yield point steel has superior energy dissipation hysteretic capacity and can be applied to seismic structures. To overcome these deficiencies, a novel compound metal damper comprising both low yield point steel plates and common steel plates is presented. The optimization objectives, including "maximum rigidity" and "full stress state", are proposed to obtain the optimal edge shape of a compound metal damper. The numerical results show that the optimized composite metal damper has the advantages such as full hysteresis curve, uniform stress distribution, more sufficient energy consumption, and it can adjust the yield strength of the damper according to the engineering requirements. In view of the mechanical characteristics of the compound metal damper, the equivalent model of eccentric cross bracing is established, and the approximate analytical solution of the yield strength and the yield displacement is proposed. A nonlinear simulation analysis is carried out for the overall aseismic capacity of three-layer-frame structures with a compound metal damper. It is verified that a compound metal damper has better energy dissipation capacity and superior seismic performance, especially for a damper with double-objective optimized shape.

Crack propagation and deviation in bi-materials under thermo-mechanical loading

  • Chama, Mourad;Boutabout, Benali;Lousdad, Abdelkader;Bensmain, Wafa;Bouiadjra, Bel Abbes Bachir
    • Structural Engineering and Mechanics
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    • 제50권4호
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    • pp.441-457
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    • 2014
  • This paper presents a finite element based numerical model to solve two dimensional bi-material problems. A bi-material beam consisting of two phase materials ceramic and metal is modelled by finite element method. The beam is subjected simultaneously to mechanical and thermal loadings. The main objective of this study is the analysis of crack deviation located in the brittle material near the interface. The effect of temperature gradient, the residual stresses and applied loads on crack initiation, propagation and deviation are examined and highlighted.

MOCVD법을 이용한 Bi-2212계 초전도박막 제조 및 특성에 관한 연구 (Preparation and Characterization of Bi-Sr-Ca-Cu-O Superconductor Thin Film by Metal Organic Chemical Vapor Deposition)

  • 장건익;김호인;박인길;김호기
    • 한국세라믹학회지
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    • 제31권10호
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    • pp.1123-1132
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    • 1994
  • Bi-Sr-Ca-Cu-O superconductor thin films were prepared on MgO and LaAlO3 substrates by MOCVD technique. The films deposited on MgO and LaAlO3 substrates became superconducting at 64 K and 70 K respectively. The measured critical current density of thin film deposited on LaAlO3 substrate was around 104 A/$\textrm{cm}^2$. After annealing at $700^{\circ}C$ for 3 hours, the critical transition temperature(Tc) of films deposited on LaAlO3 was changed from 70 K to 74 K.

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