Dielectric properties of SBT($SrBi_2Ta_2O_9$ ) on $Bi_2O_3$ /Pt/Ti/$SiO_2$ /Si substrate accordiing to various substrate temperature of $Bi_2O_3$ buffer layer
(Si(100)기판에 $SrBi_2Ta_2O_9$ 박막증착 시 $Bi_2O_3$ 후열처리에 따른 유전특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.06a
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- pp.200-201
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- 2007