• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.232-235
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• 2008

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$, $Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution, Bi substitution induced grain growth and increase of sinterablity, And also, Bi substitution suppress secondary phase due to the liquid phase sintering effect. Bi substitution enhanced electromechanical coupling factor ($k_p$) and dielectric constant ($\varepsilon_r$), However, mechanical quality factor($Q_m$) was deteriorated, At the sintering temperature of 870 $^{\circ}C$ and Bi substitution of 1 mol%, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant ($\varepsilon_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum values of 7,878 $g/cm^3$, 0,608, 835, 1603 and 397 pC/N, respectively for multilayer piezoelectric actuator application.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.254-258
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• 2000

Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.64-67
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• 1997

Microwave dielectric properties of A1$_2$O$_3$ ceramics resonator were investigated with impurity addition. Increasing the contents of Bi$_2$O$_3$Q-value and Q $\times$ f were increased. In the specimen with the content of Bi$_2$O$_3$(0.3wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, $\tau$$_{f}$) had a good values of 10.76,23,253(at 9.68[GHz]) and -39.09(ppm/$^{\circ}C$), respectively. The TCRF value was decreased with MnO$_2$ and increased with Sm$_2$O$_3$. La$_2$O$_3$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.71-77
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• 1990

This paper is studied on the sintering characteristics of Ni-Zn ferrites. The specimen ferrites was composed of 20 mol% NiO, 30mol% ZnO, 50 mol% Fe$_2$O$_3$, and 0.0025 mol%, 0.005 mol%, 0.01 mol% Nb$_2$O$\_$5/, Bi$_2$O$_3$, V$_2$O$\_$5/, wee used as minor additives. Sintering was carried out at 1100$^{\circ}C$. As results from the experiments, the high value of initial permeability of 6X10$^2$∼9X10$^2$ can be achieved at 500KHz∼1000KHz. The value of loss factor 1X10￣$^2$∼2X10$^2$ can be achieved at 500KHz∼1000KHz. The lowest 1/(${\mu}$XQ) value was obtained in the specimen with the addition of 0.005mol% fracyion for V$_2$O$\_$5/.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.14-17
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• 1995

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.277-278
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• 2007

In this study, in order to develop multilayer piezo-actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3,\;Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution. Bi substitution enhanced electromechanical coupling factor$(k_p)$ and dielectric constant$({\varepsilon}_r)$. However, mechanical quality factor was deteriorated. At the sintering temperature of $870^{\circ}C$ and Bi substitution of 1mol%, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, Dielectric constant$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $7.878g/cm^3$, 0.608, 835, 1603 and 397pC/N, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1320-1325
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• 2004

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics added with Li$_2$CO$_3$, Bi$_2$O$_3$ and CuO as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. When the only CuO was added, specimens could not be sintered below 98$0^{\circ}C$. However, when Li$_2$CO$_3$ and Bi$_2$O$_3$ were added, specimens could be sintered below 98$0^{\circ}C$. Li$_2$CO$_3$ and Bi$_2$O$_3$ addition were proved to lower sintering temperature of piezoelectric ceramics due to the effect of Li$_2$O-Bi$_2$O$_3$ liquid phase. Li$_2$CO$_3$ and Bi$_2$O$_3$ added specimens showed higher piezoelectric properties than those of the only CuO added specimens. At 0.2 wt% Li$_2$CO$_3$ and 0.3 wt% Bi$_2$O$_3$ added specimen sintered at 92$0^{\circ}C$, the dielectric constant of 1457, electromechanical coupling factor of 0.56 and mechanical quality factor of 1000 were shown, respectively. These values are suitable for multilayer piezoelectric transformer application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.17-20
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• 1993

In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.