• Title/Summary/Keyword: Bi thin film

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Contact Transfer Printing Using Bi-layer Functionalized Nanobio Interface for Flexible Plasmonic Sensing

  • Lee, Jihye;Park, Jiyun;Lee, Junyoung;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.413-413
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    • 2014
  • In this paper, we present a fabrication method of functionalized gold nanostructures on flexible substrate that can be implemented for plasmonic sensing application. For biomolecular sensing, many researchers exploit unconventional lithography method like nanoimprint lithography (NIP), contact transfer lithography, soft lithography, colloidal transfer printing due to its usability and easy to functionalization. In particular, nanoimprint and contact transfer lithography need to have anti-adhesion layer for distinctive metallic properties on the flexible substrates. However, when metallic thin film was deposited on the anti-adhesion layer coated substrates, we discover much aggravation of the mold by repetitive use. Thus it would be impossible to get a high quality of metal nanostructure on the transferred substrate for developing flexible electronics based transfer printing. Here we demonstrate a method for nano-pillar mold and transfer the controllable nanoparticle array on the flexible substrates without an anti-adhesion layer. Also functionalization of gold was investigated by the different length of thiol applied for effectively localized surface plasmonic resonance sensing. First, a focused ion beam (FIB) and ICP-RIE are used to fabricate the nanoscale pillar array. Then gold metal layer is deposited onto the patterned nanostructure. The metallic 130 nm and 250 nm nanodisk pattern are transferred onto flexible polymer substrate by bi-layer functionalized contact imprinting which can be tunable surface energy interfaces. Different thiol reagents such as Thioglycolic acid (98%), 3-Mercaptopropionic acid (99%), 11-Mercaptoundecanoic acid (95%) and 16-Mercaptohexadecanoic acid (90%) are used. Overcoming the repeatedly usage of the anti-adhesion layer mold which has less uniformity and not washable interface, contact printing method using bi-layer gold array are not only expedient access to fabrication but also have distinctive properties including anti-adhesion layer free, functionalized bottom of the gold nano disk, repeatedly replicate the pattern on the flexible substrate. As a result we demonstrate the feasibility of flexible plasmonic sensing interface and anticipate that the method can be extended to variable application including the portable bio sensor via mass production of stable nanostructure array and other nanophotonic application.

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Fabrication and characteristics for the organic light emitting device from single layer poly(N-vinylcarbazole) (단층 poly(N-vinylcarbazole) 유기물 전기발광 소자의 제작 및 특성)

  • 윤석범;오환술
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.55-61
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    • 1998
  • Organic light emitting devices from a single layer thin film with a hole transport polymer, poly(N-vinylcarbazole) (PVK) doped with 2-(4-bi phenyl)-5-(4-t-butyl-phenyl) -1,3,4-oxadiazole (Bu-PBD) as electron transporting molecules and Coumurine 6(C6), 1,1,4,4-tetraphenyl-1,3-butadiene (TPB), Rhodamine B as a emitter dye were fabricated. The sing1e layer structure and the use of soluble materials simplify the fabrication of devices by spin coating technique. The active layer consists of one polymer layer that is simply sandwiched between two electrodes, indium-tin oxide (ITO), and aluminum. In this structure, electron and hole inject from the electrodes to the PVK : Bu-PBD active layer. Respectively, Blue, green and orange colored emission spectrum by the use of TPB, C6, Rhodamine B dye emitted at 481nm, 500nm and 585nm were achieved during applied voltages. PVK materials can be useful as the host polymer to be molecularly doped with other organic dyes of the different luminescence colors. And EL color can be tuned to the full visible wavelength.

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Synthesis and Characterization of Large-Area and Highly Crystalline Tungsten Disulphide (WS2) Atomic Layer by Chemical Vapor Deposition

  • Kim, Ji Sun;Kim, Yooseok;Park, Seung-Ho;Ko, Yong Hun;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.361.2-361.2
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    • 2014
  • Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

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Chromel-Alumel Thermoelectric Flow Sensor Fabricated on Dielectric(Si3N4/SiO2/Si3N4) Membrane (유전체(Si3N4/SiO2/Si3N4)멤브레인 위에 제작된 크로멜-알루멜 열전 유량센서)

  • Lee, Hyung-Ju;Kim, Jin-Sup;Kim, Yeo-Hwan;Lee, Jung-Hee;Choi, Yong-Moon;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.12 no.3
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    • pp.103-111
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    • 2003
  • A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.

High Transparent Planar Dipole Antenna using Ionized Salt-water of ASA Structure (이온화된 소금물을 이용한 ASA 구조의 고 투명 평면형 다이폴 안테나)

  • Phan, Duy Tung;Jung, Chang Won
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.3
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    • pp.492-498
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    • 2021
  • This feasibility study evaluated an optically transparent planar antenna using liquid salt-water as the conducting material. The most significant reason behind using liquid salt-water for transparent antenna applications is its excellent average optical transparency (OTav) (> 95% at a salinity of 40 ppt) compared to other typical solid transparent thin-film electrodes, such as indium tin oxide (ITO:> 73%) or multi-layer films (MLF: > 78%). Each conductive arm of the proposed dipole is constructed from a salt-water layer held between two clear planar acrylic layers (��r = 2.61, tan�� = 0.01, OTav > 90%) (acrylic/salt-water/acrylic; ASA) due to surface tension. To examine the electrical and optical properties of the ASA structure, the surface tension was measured to determine the thickness of the salt-water layer that finalized its sheet resistance and OTav. The average gain and efficiency of the antenna were 1.72 dBi and 74%, respectively, in the operating UHF (Ultra high frequency) band (470-771 MHz). Therefore, the proposed antenna can be a good candidate for applications as a transparent planar antenna using salt-water.

Fabrication and Characterization of Bi-axial Textured Conductive Perovskite-type Oxide Deposited on Metal Substrates for Coated Conductor. (이축 배향화된 전도성 복합산화물의 금속 기판의 제조와 분석)

  • Sooyeon Han;Jongin Hong;Youngah Jeon;Huyong Tian;Kim, Yangsoo;Kwangsoo No
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.235-235
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    • 2003
  • The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

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Effect of the Cu Bottom Layer on the Optical and Electrical Properties of In2O3/Cu Thin Films (구리 기저 층이 In2O3/Cu 박막의 광학적, 전기적 특성에 미치는 영향)

  • Kim, Dae-Il
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.356-360
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    • 2011
  • Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.