• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

• Journal of Welding and Joining
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• v.16 no.3
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• pp.148-156
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• 1998

The purpose of this study is to investigate the characteristics of Pb-Free Sn-2%Ag-Bi solder alloys. The solder alloys used in this study is Sn-2%Ag-(3,5,7,9%) Bi It is examined that their properties such as melting range, wettability, microstructure, microhardness, and tensile property. The addition of Bi(3,5,7,9%) lowered the melting point of the solder and the melting range was 196~203$^{\circ}C$. The wettability of the solder as equal to that of Sn-37% Pb solder. The morphology of structure did not change largely by addition of Bi. But the structure of cellular dendrite of linear type displayed. The tensile strength of the solder was superior to that of Sn-37%Pb solder. But the elongation was inferior to that of Sn-37%Pb solder. The hardness of Sn-2%Ag solder was tow times and that of Sn-2%Ag-Bi solder was three times of that in Sn-37%Pb solder. But the effect of increment of Bi content did not change largely.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.101-103
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• 2000

In the present work, we have investigated the combined effect of high-energy milling and Agb addition on microstructure and superconducting properties for Bi-2223/Ag. tape. The addition of siver plays an important role in enhancing liquid phase formation, Resulting in densification and cracking during solidification. Further study is needed for the optimization of Ag content and heat-treatment which can reduce the cracking.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.276-279
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• 2000

Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.64-64
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.136.3-136
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• 1998

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.275-279
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• 1998

The influence of $WO_3$ (0.5-4.0mol%) on the microstructural and electrical properties of ZnO varistors was investigated. The major part of a tungsten segregated to the nodal point. SEM, EDAX, and XRD analysis revealed that three phase, such as W-rich phase, Bi-rich phase, and spinel phase, coexist at the nodal point. The average grain size increased in the range of 15.5-29.9pm with increasing $WO_3$ content. This may be probably attributed to liquid phase formed by $WO_3$, $WO_3$ acted as promotion additive of grain growth. As $WO_3$ content increase, the varistor voltage greatly decreased in the range 186.82-35.87V/mm due to the increase of grain growth. The barrier height decreased in the range 1.93-0.42eV with increasing $WO_3$content.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Asia pacific journal of information systems
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• v.30 no.4
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• pp.719-740
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• 2020

The stock market changes continuously as new information emerges, affecting the judgments of investors. Online news articles are valued as a traditional window to inform investors about various information that affects the stock market. This paper proposed new ways to utilize online news articles with technical indicators. The suggested hybrid model consists of three models. First, a self-attention-based convolutional neural network (CNN) model, considered to be better in interpreting the semantics of long texts, uses news content as inputs. Second, a self-attention-based, bi-long short-term memory (bi-LSTM) neural network model for short texts utilizes news titles as inputs. Third, a bi-LSTM model, considered to be better in analyzing context information and time-series models, uses 19 technical indicators as inputs. We used news articles from the previous day and technical indicators from the past seven days to predict the share price of the next day. An experiment was performed with Korean stock market data and news articles from 33 top companies over three years. Through this experiment, our proposed model showed better performance than previous approaches, which have mainly focused on news titles. This paper demonstrated that news titles and content should be treated in different ways for superior stock price prediction.