• Journal of Magnetics
• /
• 제20권4호
• /
• pp.336-341
• /
• 2015

MnBi alloys were fabricated by arc melting and annealing at 573 K. The heat treatment enhanced the content of the low-temperature phase (LTP) of MnBi up to 83 wt%. The Bi-excess assisted LTP MnBi alloys were used in the hybridization with the Nd-Fe-B commercial Magnequench ribbons to form the hybrid magnets (100-x)NdFeB/xMnBi, x = 20, 30, 40, 50, and 80 wt%. The as-milled powder mixtures of Nd-Fe-B and MnBi were aligned in a magnetic field of 18 kOe and warm-compacted to anisotropic and dense bulk magnets at 573 K by 2,000 psi for 10 min. The magnetic ordering of two hard phase components strengthened by the exchange coupling enhanced the Curie temperature ($T_c$) of the magnet in comparison to that of the powder mixture sample. The prepared hybrid magnets were highly anisotropic with the ratio $M_r/M_s$ > 0.8. The exchange coupling was high, and the coercivity $_iH_c$ of the magnets was ~11-13 kOe. The maximum value of the energy product $(BH)_{max}$ was 8.4 MGOe for the magnet with x = 30%. The preparation of MnBi alloys and hybrid magnets are discussed in details.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.18-21
• /
• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• 마이크로전자및패키징학회지
• /
• 제8권4호
• /
• pp.25-33
• /
• 2001

Bi(0, 2.5, 4.8, 7.5, 10 wt%)가 첨가된 Sn-3.5Ag-xBi 합금을 주조 및 압연을 거쳐 준비하였다. 그 후, dog-bone형상의 시편의 안정한 미세 조직을 위해 열처리를 거친 후, 일정하중에 크리프 실험을 수행하였다. 2.5%Bi 첨가 합금의 경우, 크리프 저항성이 가장 우수하였으며, Bi가 더 첨가됨에 따라 크리프 저항성은 감소하였다. 합금의 응력 지수는 전형전인 전위 크리프에 의한 4를 나타내었으며, 10%Bi 시편의 경우, 입계 미끄러짐에 의한 2를 나타내었다. 0%Bi 합금의 경우, 연성 파괴 양상을 보인 반면, Bi 첨가 합금의 경우, 약간의 단면적 감소를 보이는 취성 파괴 양상을 보여주었다. 파단 시편의 미세 조직 관찰 결과, 응력축에 수직한 방향으로 기공이 관찰되었으며, 상당량의 입계 미끄러짐이 관찰되었다.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
• /
• pp.51-53
• /
• 1999

The crystallization mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied from the relations between crystallization and volume changes by dilatometry. Further, the effect of addition of CdO on the crystallization mechanism and superconductivity was discussed. The shrinkage of the amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ occurred with the crystallization of $Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase decrease with increasing CdO content with a minimum at x=0.4. Better superconductivity was obtained in the specimens formation less amount of the$Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase during the crystallization process.

• 한국세라믹학회지
• /
• 제26권6호
• /
• pp.843-849
• /
• 1989

Effect of Bi2O3/Li2CO3 on low temperature sinteirng and dielectric property of BaTiO3 ceramics has been investigated. For the specimen sintered at 110$0^{\circ}C$, it was densified to 96% of BaTiO3 theoretical density by the addition of 1.0-1.25w/o Bi2O3/Li2CO3. Maximum dielectric constant increased and Curie temperature lowered with the increase of Bi2O3/Li2CO3 content, which probably can be explained by thne substitution of Bi3+, Li1+ on BaTiO3 lattice. The volatilization of Li1+, resulting from the increase of soaking time at 110$0^{\circ}C$ leads to the increase of Curie temperature and tetragonality of the specimen.

• 한국콘텐츠학회논문지
• /
• 제20권5호
• /
• pp.1-10
• /
• 2020

본 논문에서는, 최근 인터넷을 통해 빠르게 확산하고 있는 음향 중심의 음란 콘텐츠를 정확하게 검출하기 위해, 음향의 이웃 신호들 사이에 존재하는 양방향적 연관성을 기반으로 콘텐츠의 유해성을 판단하는 기법을 제안한다. 이웃한 음향 신호들간의 양방향적 연관성을 추출하기 위하여, 양방향 확장-인과 컨벌루션 연산(bi-directional dilated-causal convolution operation)들을 수행하는 확장-인과 컨벌루션 블록을 쌓아 만든 다층구조 양방향 확장-인과 컨벌루션 네트워크를 제안한다. 제안된 유해 콘텐츠 검출 기법의 효용성 검증을 위한 실험에서는 음향 신호의 각 시점으로부터 추출한 단순 특징 벡터를 기계학습 모델로 분류하는 기존 방법, 기존의 확장-인과 컨벌루션 블록을 적용해 음향 시계열 데이터의 순 방향 연관성만을 이용하는 기법, 그리고 본 연구에서 제안한 음향 시계열 데이터의 양방향 연관성까지 이용하여 유해성을 판단하는 기법의 분류 정확성을 비교하였다. 실험 결과에 의하면 본 연구에서 제안한 기법이 최대 84.38%의 인식 정확도를 가지며 이는 기존의 단순 특징 벡터를 이용하는 방법보다 약 25.80% 높고 순 방향 연관성만을 이용하는 기법보다 약 3.10% 높은 것으로 분석되었다.

• 한국주조공학회지
• /
• 제25권1호
• /
• pp.40-50
• /
• 2005

A series of heavy section ductile cast iron ingots with the cube length of 250mm were systematically investigated as functions of casting parameters of sand casting. Abnormal graphite formation was specially observed with the variation of Si content and Bi or Sb addition. Effects of chilling during casting and adaptation of riserless system were also examined, and proved to be effective for the prevention of both shrinkage and abnormal graphite such as chunky one. The formation of chunky graphite was effectively prevented by low Si content despite the promotion of pearlite matrix structure. The ferritic matrix was encouraged to form by high Si content and chunky graphite formation was effectively suppressed by the addition of Bi and Sb. Bi addition, however, was not good enough to control the microstructure owing to the sensitive cooling rate dependent inoculation behavior and relative low ability of nodulization. Sb addition, on the other hand, was proved to be effective for the microstructural control and enhancement of various mechanical properties such as strength, elongation, and impact energy. It may be suggested that optimized casting parameters should be applied to produce heavy section ductile cast iron with reliability.

• 한국세라믹학회지
• /
• 제31권11호
• /
• pp.1396-1400
• /
• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• 한국결정성장학회지
• /
• 제19권2호
• /
• pp.66-69
• /
• 2009

The compositional dependence of bismuth iron oxides and effect of La-substitutions in the structure of $BiFeO_3$ compounds were investigated, which compounds were synthesized by conventional ceramic processing. It is shown that some of bismuth iron oxides including $BiFeO_3$ show the narrow single phase region. The effect of La-doping in $BiFeO_3$ was presented as disappearance of many impurity phases of Bi-Fe-O compounds. The lower electrical resistivity was obtained as those compositions of Fe deficient region and La-doped $BiFeO_3$. The saturation magnetization of La-doped $BiFeO_3$ was increased with La content. The dielectric dispersion was also observed for those Bi-Fe-O compounds with Fe deficient and La-doped $BiFeO_3$ at low frequencies under 1 kHz.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.565-568
• /
• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.