• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1107-1112
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• 1998

We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

• Corrosion Science and Technology
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• v.5 no.3
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• pp.94-98
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• 2006

The next generation nuclear power reactor will use Pb-Bi as the cooling material. The steel structure materials such as HT-9 used in the reactor suffer from corrosion when they are exposed to high temperature Pb-Bi. Therefore corrosion should be prevented to use Pb-Bi as the coolant material without any safety problem. One method is to control the oxygen content in Pb-Bi. An appropriate amount of oxygen in Pb-Bi can produce a thin oxide layer on steel, and this layer protects the steel from corrosion attack. Since the required oxygen content in Pb-Bi is in the range of $10^{-5}$ to $10^{-7}$ wt%, this small oxygen content can be controlled by flowing a mixture of hydrogen gas and water vapor. The stagnant corrosion test of HT-9 samples was performed by controlling the oxygen content up to 2,000 hours. The corrosion behavior of HT-9 was analyzed at the temperatures of $500^{\circ}C$ and $650^{\circ}C$ with a reduced condition and a oxygen content of $10^{-6}$ wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.69-72
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• 2003

Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor powders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. XRD and DC magnetization analysis were performed in order to investigate the fraction of Bi-2223 phase in Bi-2223/Ag HTS tape. We could achieve best Ic of 70 A class at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process. DC magnetization analysis was useful to investigate the fraction of Bi-2223 phase in the Bi-2223/Ag tape.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.787-791
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• 2000

Samples with the nominal composition, Bi2-xGexSr2CaCu2O8＋$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.764-769
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• 2002

The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.819-826
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.276-279
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• 2002

$Bi_{2}Sr_{2}CaCu_{2}O_{x}$ was prepared by the conventional method of solid state reaction and SHS method. The samples were annealed in different atmosphere in order to examine the influence of atmospheres on the carbon contents in the $Bi_{2}Sr_{2}CaCu_{2}O_{x}$ compound. The lowest carbon content in $Bi_{2}Sr_{2}CaCu_{2}O_{x}$ could be attended when the sample was annealed in $O_{2}$ at $800^{\circ}C$ for 100 hours. The $CO_{2}$ in air pollute the samples and increase the carbon content in the sintering process. The critical current density of the $Bi_{2}Sr_{2}CaCu_{2}O_{x}$ samples will decrease with the increasing carbon contents in the samples. The impurity carbon will deposit in the grain boundary, which makes critical current density lower.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.105-108
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• 2003

Long length of Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor owders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. We designed and made a continuous Ic measurement system for Bi-2223/Ag HTS tape. We could achieve best Ic of 65 A at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process.