• 대한기계학회논문집A
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• 제32권1호
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• pp.35-42
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• 2008

본 연구에서는 원뿔형 압입자를 이용한 압입시험의 기초 유한요소해석으로부터 자기유사성을 나타내는 Kick's law 계수 C의 영향을 조사하고, 선단반경의 변화가 하중-변위 곡선에 미치는 영향을 회귀분석을 통해 살펴보았다. 아울러 항복강도와 변형경화지수 등의 변수들이 재료 영률평가에 미치는 영향을 분석하였다. 기존 영률 평가에 널리 사용되는 탄성이론에 기초한 Pharr 등의 식을 일반적인 탄소성 금속재료에 적용하기 위하여 다양한 재료에 대한 유한요소해석을 수행하였다. 재료 영률평가 시 압입자 선단반경과 압입깊이의 영향을 최소화하기 위해 Pharr 등의 식에 수정된 보정계수 k를 도입한 영률예측식을 제시하였다. 새로운 영률예측식은 텅스텐 카바이드와 다이아몬드 압입자일 때 모두 2%내의 평균 오차범위에서 각 재료의 영률을 평가할 수 있다.

• 한국정밀공학회지
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• 제23권8호
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 한국재료학회지
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• 제13권9호
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• pp.606-612
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• 2003

Surface and mechanical properties of thin films with submicron thickness was characterized by nanoindentation with Berkovich and Vickers tips, and scanning probe microscopy. Nanoindention was made in a depth range of 15 to 200 nm from the surface by applying tiny force in a range from 150 to $9,000 \mu$N. Stiffness, contact area, hardness, and elastic modulus were determined from the force-displacement curve obtained. Reliability was first tested by using fused quartz, a standard sample. Elastic modulus and hardness values of fused quartz measured were the same as those reported in the literature within two percent of error. Mechanical properties of ITO thin film were characterized in a depth range of 15∼200nm. As indentation depth increased, elastic modulus and hardness decreased by substrate effect. Ion beam deposited DLC thin films were indented in a depth range of 40∼50 nm. The results showed that the DLC thin film using benzene and bias voltage 0∼-50 V has elastic modulus and hardness value of 132 and 18 GPa respectively. Pure DLC thin films showed roughnesses lower than 0.25 nm, but silicon-added DLC thin films showed much higher roughness values, and the wavy surface morphology.

• 열처리공학회지
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• 제36권3호
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• pp.128-136
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• 2023

In this study, the effects of heat treatment on the nano-scale creep behavior of CoCrFeMnNi high-entropy alloy (HEA) processed by high-pressure torsion (HPT) was investigated through nanoindentation technique. Nanoindentation experiments with a Berkovich indenter were performed on HPT-processed alloy subjected to heat treatment at 450℃, revealing that the hardness of the HPT-processed alloy (HPT sample) significantly increased with the heat treatment time. The heat treatment-induced microstructural change in HPT-processed alloy was analyzed using transmission electron microscopy, which showed the nano-sized Cr-, NiMn-, and FeCo-rich phases were formed in the HPT-processed alloy subjected to 10 hours of heat treatment (HPT+10A sample). To compare the creep behavior of HPT and HPT+10A samples, constant load nanoindentation creep experiments were performed using spherical indentation indenters with two different radii. It was revealed that the predominant mechanism for creep highly depended on the applied stress level. At low stress level, both HPT and HPT+10A samples were dominated by Coble creep. At high stress level, however, the mechanism transformed to dislocation creep for HPT sample, but continued to be Coble creep for HPT+10A sample, leading to higher creep resistance in the HPT+10A sample.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.