• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.132-132
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.135-135
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.142-142
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• 2004

• Transactions of Materials Processing
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• v.22 no.7
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• pp.383-388
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• 2013

Metal flow of the beam blank during H-beam rolling was examined in order to correlate the rolling defects with the beam blank configuration. For this purpose, H-beam rolling was performed on the beam blank where stainless steel bolts were inserted as the marker at the web and flange. The positional variation of the marker was monitored at each rolling pass, and the result was compared with the 3D FEM simulation employing the point tracking function. The simulation results were reasonably agreed with the experimental within the error of 0.5~1mm on both web and flange of the H-beam. It is anticipated that the 3D FEM simulation employing the point tracking function provides the guidance information on analyzing the correlation between the rolling defects and the beam blank configuration in H-beam rolling.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.698-701
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• 2005

We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.722-725
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• 2003

In AC plasma display, it is very important to quantify the wall voltage induced by the wall charge accumulated on the dielectric surface. If we know the quantities of the wall voltage in each period of every sequence; reset period, address period and sustain period, then it helps us to design the optimal driving waveform for high efficiency plasma display. We develop a new method to measure the wall voltage with VDS (Versatile Driving Simulator) system. From this method the wall voltage induced by a wall charge profiles just after the reset discharge of every cells in plasma display panel can be investigated and analyzed successfully. It is noted that the wall voltage profiles are influenced by the space charge and then they are stabilized as time goes by. It is also noted that both the remaining wall charge at the previous sequence and space charges contribute to wall voltage quantities just after the reset discharge. It is noted that the wall charges contribute dominantly after a few hundreds microseconds, while the space charges have been decayed within 100 ${\mu}s$ just after the reset discharge.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.382-387
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• 2014

An all-reflective, simple noncollinear second harmonic (SH) autocorrelator is described for monitoring the shot-to-shot behavior of ultrashort high-power laser pulses. Two mirrors are used for the dispersion-free splitting of a pulse into two halves. One of the mirrors is able to adjust the delay time and angle between two halves of the laser pulse in a nonlinear crystal. We present the possibility of real-time measurement of the pulse duration, peak intensity (or energy), and the pointing jitters of a laser pulse, by analyzing the spatial profile of the SH autocorrelation signal measured by a CCD camera. The measurement of the shot-to-shot variation of those parameters will be important for the detailed characterization of laser accelerated electrons or protons.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.522-524
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• 2004

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) rays in surface discharge AC-PDP with binary and ternary gas mixtures of Ne-Xe and He-Ne-Xe. The influence of He-Ne-Xe gas-mixture ratio on excited $Xe^{\ast}$ resonant atoms and $Xe_2$$^{\ast}$ dimers has been investigated. It is found that luminous efficiency of ternary gas mixture, He-Ne-Xe, is shown to be much higher than that of binary gas mixture of Ne-Xe.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1218-1220
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• 2005

We have developed laser absorption spectroscopy system for the measurement of excited Xe atoms in micro-discharged AC-PDP plasma. In this study, we have measured the absorption signals for the $1S_5$ xenon metastable state in the PDP cell with the various gas mixtures of Ne-Xe(1%), Ne-Xe(4%) and Ne-Xe(10%) under fixed gas pressure of 350 Torr and the eletrode gap distance of 50um. It is found that the maximum excited xenon densities are $1.2^{\ast}10^{12}\;cm^{-3}$, $1.8^{\ast}10^{12}\;cm^{-3}$ and $2.7^{\ast}10^{12}cm^{-3}$ for gas mixtures of Ne-Xe(1%), Ne-Xe(4%) and Ne-Xe(10%) respectively, in this experiment.