• 공업화학
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• 제3권2호
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• pp.305-311
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• 1992

수소에 의한 $In_2O_3$의 환원반응을 열중량분석기를 이용하여 실험적으로 연구하였다. $In_2O_3$의 환원반응은 $300^{\circ}C$ 이상에서 일어났다. 환원반응속도는 반응온도에 따라 급격히 증가하였으나, 수소의 유량에 대해선 거의 영향을 받지 않았다. 비반응핵모델을 $In_2O_3$의 환원반응에 적용한 결과 $In_2O_3$의 표면에서 수소와 $In_2O_3$의 화학반응이 율속단계임을 알 수 있었다. $In_2O_3$의 환원반응 겉보기 활성화에너지는 20kcal/g-mol $H_2$였으며 환원반응속도식은 다음과 같이 얻어졌다. ${\frac{dX}{dt}}=1.6{\times}10^5e^{-20000/RT}(1-X)^{2/3}$

• 한국결정성장학회지
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• 제3권2호
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• pp.99-106
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• 1993

열분석(DTA : Differential Thermal Analysis) 방법에 의한 퀴리온도$(T_c)$ 측정방법으로부터 48.50에서 49 $Li_2O$ mole %까지의 퀴리온도$(T_c)$와 $Li_2O$ mole %(C)의 관계식 $(T_c = -17.869C^2+1840.2C-46623)$을 구하였다.$LiTaO_3$ 단결정의 congruent 조성을 결정하기 위하여 48.60 부터 48.70 mole %까지의 영역에서 쵸크랄스키법으로 $LiTaO_3$ 단결정을 육성하고 Top과 Tail 결정에서의 퀴리온도 차이,${\Delta}{T_c} (T_{c(Top)}-T{_c(Tail)})$ 그리고 결정성장 초기와 말기의 융액과 결정의 조성비로부터 분배계수(k)를 구하였다. 이 결과로부터 결정된 congruent 조성은 48.65 mole %였으며 그때의 $(T_c)$ 값은 $610{\pm}1^{\circ}C$였다.

• 대한화학회지
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• 제33권1호
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• pp.11-17
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• 1989

피라지니움염인 피라지니움 크로로크로메이트와 디피라지니움 트리크로로메이트는 HCl용액과 $CH_2Cl_2$용액에 피라진을 각각 녹이고 거기에 CrO$_3$ 를 가하므로 얻었다. 이들 화합물은 모두 비흡수성이나 물에 잘 녹었다. 이들 화합물의 물리적 특성으로 용해도, pH, 전기전도도, 용융점 등을 측정하였다. 이들 화합물은 전기 전도도 측정으로 $C_4H_4N_2H^+$, $CrO_3Cl^-$, $Cr_3O^{2-}_{10}$ 이온 등으로 용액 내에 존재하는 것을 알 수 있었다. 또한 DTA에 의해 염의 첫번째 분해시에 CrO$_3$ 가 분리되고 두번째 분해시에는 $Cr_2O_3$로 변해지고 이때 무게가 감소됨을 알 수 있었다. 특히 동일한 조건하에서 디피라지니움 염은 피리딘으로부터 얻어진 $Cr_2O^{2-}_{7}$의 형태로 존재하리라 예측했던 것이 이소폴리의 형태로 존재함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.77.2-77.2
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• 2013

In this talk, I will briefly review recent results of my group related to application of atomic layer deposition (ALD) for fabricating environmental catalysts and organic solar cells. ALD was used for preparing thin films of TiO2 and NiO on mesporous silica with a mean pore size of 15 nm. Upon depositing TiO2 thin films of TiO2 using ALD, the mesoporous structure of the silica substrate was preserved to some extent. We show that efficiency for removing toluene by adsorption and catalytic oxidation is dependent of mean thickness of TiO2 deposited on silica, i.e., fine tuning of the thickness of thin film using ALD can be beneficial for preparing high-performing adsorbents and oxidation catalysts of volatile organic compound. NiO/silica system prepared by ALD was used for catalysts of chemical conversion of CO2. Here, NiO nanoparticles are well dispersed on silica and confiend in the pore, showing high catalytic activity and stability at 800oC for CO2 reforming of methane reaction. We also used ALD for surface modulation of buffer layers of organic solar cell. TiO2 and ZnO thin films were deposited on wet-chemically prepared ZnO ripple structures, and thin films with mean thickness of ~2 nm showed highest power conversion efficiency of organic solar cell. Moreover, performance of ALD-prepared organic solar cells were shown to be more stable than those without ALD. Thin films of oxides deposited on ZnO ripple buffer layer could heal defect sites of ZnO, which can act as recombination center of electrons and holes.

• Journal of Microbiology and Biotechnology
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• 제31권9호
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• pp.1191-1199
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• 2021

Enteropathogenic Escherichia coli (EPEC), which belongs to the attaching and effacing diarrheagenic E. coli strains, is a major causative agent of life-threatening diarrhea in infants in developing countries. Most EPEC isolates correspond to certain O serotypes; however, many strains are non-typeable. Two EPEC strains, EPEC001 and EPEC080, which could not be serotyped during routine detection, were isolated. In this study, we conducted an in-depth characterization of their putative O-antigen gene clusters (O-AGCs) and also performed constructed mutagenesis of the O-AGCs for functional analysis of O-antigen (OAg) synthesis. Sequence analysis revealed that the occurrence of O-AGCs in EPEC001 and E. coli O132 may be mediated by recombination between them, and EPEC080 and E. coli O2/O50 might acquire each O-AGC from uncommon ancestors. We also indicated that OAg-knockout bacteria were highly adhesive in vitro, except for the EPEC001 wzy derivative, whose adherent capability was less than that of its wild-type strain, providing direct evidence that OAg plays a key role in EPEC pathogenesis. Together, we identified two EPEC O serotypes in silico and experimentally, and we also studied the adherent capabilities of their OAgs, which highlighted the fundamental and pathogenic role of OAg in EPEC.

• The Plant Pathology Journal
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• 제35권1호
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• pp.77-83
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• 2019

Chlorine dioxide ($ClO_2$) can be used as an alternative disinfectant for controlling fungal contamination during postharvest storage. In this study, we tested the in vitro and in vivo inhibitory effects of gaseous $ClO_2$ against Diaporthe batatas SP-d1, the causal agent of sweetpotato dry rot. In in vitro tests, spore suspensions of SP-d1 spread on acidified potato dextrose agar were treated with various $ClO_2$ concentrations (1-20 ppm) for 0-60 min. Fungal growth was significantly inhibited at 1 ppm of $ClO_2$ treatment for 30 min, and completely inhibited at 20 ppm. In in vivo tests, spore suspensions were drop-inoculated onto sweetpotato slices, followed by $ClO_2$ treatment with different concentrations and durations. Lesion diameters were not significantly different between the tested $ClO_2$ concentrations; however, lesion diameters significantly decreased upon increasing the exposure time. Similarly, fungal populations decreased at the tested $ClO_2$ concentrations over time. However, the sliced tissue itself hardened after 60-min $ClO_2$ treatments, especially at 20 ppm of $ClO_2$. When sweetpotato roots were dip-inoculated in spore suspensions for 10 min prior to treatment with 20 and 40 ppm of $ClO_2$ for 0-60 min, fungal populations decreased with increasing $ClO_2$ concentrations. Taken together, these results showed that gaseous $ClO_2$ could significantly inhibit D. batatas growth and dry rot development in sweetpotato. Overall, gaseous $ClO_2$ could be used to control this fungal disease during the postharvest storage of sweetpotato.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.276-280
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• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

• 한국표면공학회지
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• 제56권6호
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• pp.380-385
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• 2023

In this study, an MPB PMNT system containing 0.05 to 0.10 wt.% BaTiO₃ was synthesized using a traditional chemical method and its pyroelectricity was investigated. Pyroelectricity, dielectricity, and ferroelectricity of the synthesized BaTiO₃-PMNT system were analyzed by heat treatment at 1240~1280 ℃ for 4 hours to evaluate its applicability as a pyroelectric sensor. Unlike the simple ABO₃ ferroelectric, the BaTiO₃-doped PMNT system exhibited phase transition characteristics over a wide temperature range typical of complex perovskite structures. Although no dramatic change could be confirmed depending on the amount of BaTiO₃ added, stable pyroelectricity was maintained near room temperature and over a wide temperature range. When the amount of BaTiO₃ added increased from 0.05BaTiO₃-PMNT to 0.10BaTiO₃-PMNT, the electric field slightly increased from 5.00×10³ kV/m to 6.75×10³ kV/m, and the maximum value of remanent polarization slightly increased from 0.223 C/m² to 0.234 C/m². The pyroelectric coefficients of 0.05BaTiO₃-PMNT and 0.10BaTiO₃- PMNT at room temperature were measured to be ~0.0084 C/m²K and ~0.0043 C/m²K, respectively. The relaxor ferroelectric properties of the BaTiO₃-PMNT system were confirmed by analyzing the plot of K_max/K versus (T-T_max)^γ. The BaTiO₃-doped MPB PMNT system showed a distinct pyroelectric performance index at room temperature, and the values were F_v ~ 0.0362 m²/C, F_d ~ 0.575×10^-4 Pa^-1/2.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1129-1132
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• 1995

In the preparation of the layered $BaTiO_3$ thin films with high performance, the new stacking method using the continuous cooling of the substrate was introduced. Amorphous/polycrystalline $BaTiO_3$ layered structure was confirmed by SEM and index of refraction. The layered $BaTiO_3$ thin films formed by the new stacking method showed such a high dielectric constant that the layered structure could not be explained by a stacking structure of the two defined layers but could only be explained by multi-layered structure, i.e. amorphous/micro crystalline/polycrystalline structure. The layered $BaTiO_3$ thin film with a thickness of 240 nm showed higher capacitance per unit area and breakdown strength than the double layered $BaTiO_3$ thin film prepared by the conventional stacking method. And well defined ferroelectric hysteresis leer was observed in the layered $BaTiO_3$ thin film with a thickness of 200 nm.

• 한국세라믹학회지
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• 제52권4호
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.