• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• 한국재료학회지
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• 제15권10호
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• pp.678-682
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• 2005

We studied the possibility of $Zn_4O(Ac)_2(OH)$ formation as a precursor for ZnO nano particles in sol-gel method. Four different additives such as tetra methyl ammonium hydroxide, mono ethanol amine (MEA), LiOH, and $H_2O$ were used for zinc acetate dissolved in 2-methoxy ethanol. ZnO particles of 5-6 nm in size were observed. Existence of $Zn_4O(Ac)_6$ was not verified. $Zn_4O(Ac)_2(OH)$ molecules were observed and they were believed to be the precursors of ZnO. A peak at 275nm in UV-Vis analysis was observed In the case of MEA and $H_2O$ but no ZnO particles were detected in transmission electron microscopy.

• 한국세라믹학회지
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• 제21권4호
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• pp.341-348
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• 1984

$BaTiO_3$ and $SrTiO_3$ were mixed with the mole ratio of 35:65， 50:50 and 65:35 and heated at 1100~120$0^{\circ}C$ for 1~64 hours. The dielectrics of $BaTiO_3$-$SrTiO_3$ system were investigated as a function of amount of solid solution formed. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of heating of soaking time for the same composition and heating temperature. This can be explained by the homogeneous distribution of $Ba^{2+}$ and $Sr^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$ in the $BaTiO_3$-$SrTiO_3$system because of decreasing the lattice constant.

• 한국세라믹학회지
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• 제36권10호
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• pp.1022-1034
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• 1999

A relation between composition and properties of Na2O-Al2O3-SiO2 glasses was investigated with application of the extreme vertical design. Properties investigated in this study include glass transition temperature density refractive index thermal expansion electrical conductivity bending strength and hardness, Most of the quadratic models fitted on property data were statistically significant. The properties estimated from the fitted equation agreed well with the measured properties. The estimated properties were compared with those reported by other investigators. Additional composition except for those of extreme vertices were needed to yield a slightly better result for the simple system such as a temary system. In addition an optimal composition on each property could be calculated by using optimization technique on result obtained from the fitted quadratic models.

• 한국세라믹학회지
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• 제34권9호
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• pp.949-956
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• 1997

With the increase of ZnO content, burnability of raw materials was improved and the formation of clinker minerals was accellerated. When ZnO was added 1wt%, the clinkering temperature was decreased about 30~5$0^{\circ}C$. As an increase of ZnO added, aluminate phase was decreased and ferrite phase was increased. When ZnO was added more than 3.0wt.%, the new phases, such as ZnO.Al2O3 and ZnO.Fe2O3 were formed. In the excess of amount of ZnO added, the decomposition of alite phase was intensed and the lamella structure in belite could not be observed due to the decomposition.

• 한국세라믹학회지
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• 제30권5호
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• pp.373-380
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• 1993

Li2O-B2O3-P2O5 glasses with high lithium content were analysed by electrical characterization. The electrical conductivity increase with Li content and exhibits a maximum value of 1.2$\times$10-4S/cm near B2O3/P2O5=1 at 15$0^{\circ}C$. Glass transitiion temperature increased with conductivity. Concentration of charge carrier and distribution of relaxation time were independent of temperature. In this system the variation of conductivity with the composition was depend on mobility of lithium ion. Basically, it is attribute to primitive activation energy. Enhancement of conductivities was related to be formation of (B-O-P)-, di-, and metaborate group, which give additional available sites for Li+ diffusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• 한국세라믹학회지
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• 제29권1호
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• pp.9-14
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• 1992

Some of non-isothermal analysis methods are applied to CaO-MgO-Al2O3-SiO2 glass system to find the kinetics parameters of crystallisation, activation energy, Avrami component and frequency factor. The results using the non-isothermal analysis were compared to that of microstructure experiment. Analysis of the result has enabled to some methods to be to recommend as being the most appropriate equation to use in a glass system. It was shown that in the thermal analysis using the non-isothermal method of Kissinger, Augis-Bennett, Bansal, and Marotta, the calculation of activation energy is not much different, while Avrami component and frequency factor are different from applied each methods.

• 한국세라믹학회지
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• 제46권6호
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.