• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.109-111
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• 1995

We suggest the phenominological model to determine the mangetoelastic coupling coefficient in Cu/Ni/Cu thin films by considering effective anisotropy energy with magnetic film thicknesses. This indirect determination can be applied other single crystalline systems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.210-215
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• 2006

Mechanical alloying (MA) by high energy ball mill of pure copper and niobium powders was carried out under the Ar gas atmosphere. The supersaturated solid solution can be produced in the range up to $Cu_xNb_{100-x}$(x=5-30) by MA for 120 hrs, as demonstrated by X-ray diffraction, DSC analysis and the electronic studies through a change in the superconducting transition in the low-temperature specific heat. The $Cu_{30}Nb_{70}$ samples ball-milled for 120 hrs exhibit only a broad exothermic heat release. The total energy, ${\Delta}H_t$ accumulated during MA far the mixture of $Cu_{30}Nb_{70}$ powders increased with milling time and approached the saturation value of 7.5 kJ/mol after 120 h of milling. It can be seen that the free energy difference between the supersaturated solid solution and the mixture of $Cu_{30}Nb_{70}$ powders is estimated to be 7 kJ/mol by Miedema et al. Hence it is thermodynamically possible to assume the formation of a supersaturated solid solution phase in this system.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1065-1068
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• 2001

Effects of compacting pressure on the electrical and sintering characteristics of Cu25Cr contact material have been investigated. Cu25Cr contact materials were prepared by solid and liquid-phase sintering methods varying compacting pressure. Influence of compacting pressure on electrical characteristics were investigated in the cylindrical stainless-steel vessel using L-C resonant circuit. The physical and electrical properties of solid-phase sintered Cu25Cr material were found to be improved by increased compacting pressure. On the other hand, it was found that compacting pressure had little influence in case of liquid-phase sintered Cu25Cr material. After conditioning, contact resistance of Cu25Cr material was decreased regardless of compacting pressure. With increased compacting pressure, interrupting ability was shown to be increased.

• BMB Reports
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• v.46 no.11
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• pp.555-560
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• 2013

Acrolein is the most reactive aldehydic product of lipid peroxidation and is found to be elevated in the brain when oxidative stress is high. The effects of acrolein on the structure and function of human Cu,Zn-superoxide dismutase (SOD) were examined. When Cu,Zn-SOD was incubated with acrolein, the covalent crosslinking of the protein was increased, and the loss of enzymatic activity was increased in a dose-dependent manner. Reactive oxygen species (ROS) scavengers and copper chelators inhibited the acrolein-mediated Cu,Zn-SOD modification and the formation of carbonyl compound. The present study shows that ROS may play a critical role in acrolein-induced Cu,Zn-SOD modification and inactivation. When Cu,Zn-SOD that has been exposed to acrolein was subsequently analyzed by amino acid analysis, serine, histidine, arginine, threonine and lysine residues were particularly sensitive. It is suggested that the modification and inactivation of Cu,Zn-SOD by acrolein could be produced by more oxidative cell environments.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.395-401
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• 1989

The concentrations of Cu(II), Y(III) and Ba(II) ionic species in aqueous solution due to the formation of Cu2+-oxalate-complex have been theoretically calculated with respect to pH and their solubility diagrams could be obtained. It was verified from the calculation that the excess of Cu2+ and Ba2+ should be added in order to obtain oxalate coprecipitates with the molar ratio of Y : Ba : Cu=1 : 2 : 3. The exact amount of excess species has been calculated with respect to the initial concentrations of metal ions and pH.

• International Journal of Railway
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• v.3 no.1
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• pp.19-27
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• 2010

In the present study, the electrical sliding wear and corrosion resistance of pure copper (Cu) and six age-hardened copper alloys (CuCr, CuZr, CuCrZr, CuNiSiCr, CuBe and CuBeNi) were investigated by a pin-on-disc tribometer and electrochemical measurement. Various copper-based alloys in the form of cylindrical pin were forced to slide against a counterface stainless steel disc in air under unlubricated condition at a sliding velocity of 31 km/h under normal load up to 20 N with and without electric current. The worn surface of and wear debris from the specimens were studied by scanning electron microscopy. Both mechanical wear and electrical arc erosion were the wear mechanisms for the alloys worn at 50 A. Owing to its good electrical conductivity, high wear and corrosion resistance, CuCrZr is a promising candidate as the overhead catenary material for electric traction systems.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.768-772
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• 2013

Layered mixed metal hydroxy double salts (HDS) with the formulas $(Cu_{0.75}Ni_{0.25})_2(OH)_3NO_3$ ((Cu, Ni)-HDS) and $Cu_2(OH)_3NO_3$ ((Cu, Cu)-HDS) were prepared via slow hydrolysis reactions of CuO with $Ni(NO_3)_2$ and $Cu(NO_3)_2$, respectively. The crystal structures, morphologies, bonding natures, and magnetic properties of (Cu, Ni)-HDS and (Cu, Cu)-HDS were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and a superconducting quantum interference device (SQUID). Even though (Cu, Ni)-HDS has a similar layered structure to that of (Cu, Cu)-HDS, the bonding nature of (Cu, Ni)-HDS is slightly different from that of (Cu, Cu)-HDS. Therefore, the magnetic properties of (Cu, Ni)-HDS are significantly different from those of (Cu, Cu)-HDS. The origin of the abnormal magnetic properties of (Cu, Ni)-HDS can be explained in terms of the bonding natures of the interlayer and intralayer structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.