• ETRI Journal
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• 제27권5호
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• pp.551-556
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• 2005

We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

• ETRI Journal
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• 제27권5호
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• ETRI Journal
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• 제25권6호
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• pp.489-502
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• 2003

This paper presents an MPEG-4 video codec, called MoVa, for video coding applications that adopts 3G-324M. We designed MoVa to be optimal by embedding a cost-effective ARM7TDMI core and partitioning it into hardwired blocks and firmware blocks to provide a reasonable tradeoff between computational requirements, power consumption, and programmability. Typical hardwired blocks are motion estimation and motion compensation, discrete cosine transform and quantization, and variable length coding and decoding, while intra refresh, rate control, error resilience, error concealment, etc. are implemented by software. MoVa has a pipeline structure and its operation is performed in four stages at encoding and in three stages at decoding. It meets the requirements of MPEG-4 SP@L2 and can perform either 30 frames/s (fps) of QCIF or SQCIF, or 7.5 fps (in codec mode) to 15 fps (in encode/decode mode) of CIF at a maximum clock rate of 27 MHz for 128 kbps or 144 kbps. MoVa can be applied to many video systems requiring a high bit rate and various video formats, such as videophone, videoconferencing, surveillance, news, and entertainment.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2008년도 동계학술발표대회 논문집
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• pp.413-418
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• 2008

The toroidal field magnet power supply (TF MPS) for the KSTAR was constructed in August, 2007 and started the operation for the commissioning in March, 2008. The main role of the TF MPS is to supply the electric power to the TF magnet of the KSTAR. The water cooling components of the TF MPS are 16 stacks, busbar of 70 meters. For the cooling of the TF MPS, the D I water cooling system was designed and installed. The water cooling system consists of several pumps, heat exchangers, D I water polishing system and so on. The water cooling system for the TF MPS was tested under the 15 kA current charging condition. In this paper be discussed about the system performance and other parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.45-51
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• 2005

We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

• Journal of Information Display
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• 제5권3호
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• pp.30-34
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• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1564-1567
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• 2005

Zinc oxide thin films were grown at the t emperature of $100^{\circ}C$ and $150^{\circ}C$ by means of plasma enhanced atomic layer deposition (PEALD) and conventional atomic layer deposition for applying to the transparent thin film transistor (TTFT). The growth rate of $1.9{\AA}/cycle$ with oxygen plasma is similar to that of film grown with water. While the sheet resistivity of ZnO grown with water is 1233 ohm/sq, that of film grown with oxygen plasma was too high to measure with 4 point probe and hall measurement system. The resistivity of the films grown with oxygen plasma estimated to be $10^6$ times larger than that of the films grown with water. The difference of electrical property between two films was caused by the O/Zn atomic ratio. We fabricated ZnO-TFT by means of ALD for the first time and the ZnO channel fabricated with water showed saturation mobility of $0.398cm^2/V{\cdot}s$ with bottom gate configuration.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.91.4-91
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• 1998

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.92.2-92
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• 1998

• ETRI Journal
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• 제26권3호
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• pp.277-280
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• 2004

The distributions of electric field and induced second-order nonlinearity are analyzed in the periodic poling of optical fibers. A quasi-phase matching efficiency for the induced nonlinearity is calculated in terms of both the electrode separation distance between the applied voltage and generalized electrode width for the periodic poling. Our analysis of the quasi-phase matching efficiency implies that the conversion efficiency can be enhanced through adjusting the separation distance, and the electrode width can be maximized if the electrode width is optimized.