• 제목/요약/키워드: Base current

검색결과 1,505건 처리시간 0.031초

계통상태를 고려한 송전선의 ELF 전자계 (ELF Electric and Magnetic Fields under the Transmission Line Including Electric Power System States)

  • 김두현;김상철
    • 한국안전학회지
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    • 제11권3호
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    • pp.89-96
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    • 1996
  • This paper presents a study on the analysis and evaluation for ELF( Extremely Low Frequency) electric and magnetic fields under the transmission line according to the power system states. The power system states are classified into two types, normal state resulting from normal operation and alert state from outages. The current in a system is changed continually owing to the load fluctuations even in a normal operation. To calculate the current of the concerned line in a normal state, the system load level is devided into light, base and heavy load level. In case of contingency, an efficient algorithm based on matrix inversion lemma is developed to figure out the current changes. In order to analyze the variations of ELF field caused by the current fluctuations the electrostatic field approach which is far simpler than the electromagnetic field one based on Maxwell equation is introduced in this paper. The suggested method is applied to the IEEE 14 bus system to demonstrate the usefulness.

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인버터 용접기 2차측 출력 전압손실을 보상하는 제어방법 (The Control Method for Output Voltage Compensation on the Secondary of Inverter)

  • 배종일;유치국;주진호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 D
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    • pp.2772-2774
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    • 2003
  • The power source of inverter welder stable power of low voltage and high current. Because if shouldn't be, it is caused to spark between the parent metal and the peak. So that, we designed to be base on high frequency transformer and reactor of DC part. Then, we optimized control of PWM, current rising slant, voltage, current, pulse current and inverter out-put voltage. Also we designed PCB for EMI and noises.

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Switch-on Phenomena and Field Emission from Multi-Walled Carbon Nanotubes Embedded in Glass

  • Bani Ali, Emad S;Mousa, Marwan S
    • Applied Microscopy
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    • 제46권4호
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    • pp.244-252
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    • 2016
  • This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

인버터 용접기의 출력 전압제어 및 Art-Work 구현에 관한 연구 (On Study for The Implementation of Art-Work and Output Voltage Control of An Inverter Welder)

  • 배종일;최연욱;김영식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1888-1889
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    • 2007
  • The power source of inverter welder stable power of low voltage and high current. Because if shouldn't be, it is caused to spark between the parent metal and the peak. So that, we designed to be base on high frequency transformer and reactor of DC part. Then, we optimized control of PWM, current rising slant, voltage, current, pulse current and 인버터 out-put voltage. Also we designed PCB for EMI and noises.

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과도 상태 시 NPT IGBT의 전압-전류 모델링 (Voltage-Current Modeling of NPT IGBT for Transient Condition)

  • 류세환;이명수;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.405-408
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    • 2004
  • In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.

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극박 다이아프램의 펄스 GTAW 공정 최적화에 관한 연구 (Study on the Optimization of Pulse GTAW Process for Diaphragm with Thin Thickness)

  • 박형진;황인성;강문진;이세헌
    • Journal of Welding and Joining
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    • 제26권1호
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    • pp.63-68
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    • 2008
  • This paper has aimed to prevent excessive heat input by controlling arc distribution and heat input capacity with pulse GTAW in order to improve weld quality in 0.08mm pressure gauge diaphragm and flange welding parts. A design of experiment was designed using Box-Behnken method to optimize a welding process. The pulse GTAW parameters such as pulse current, base current, pulse duty, frequency and welding speed were set to input variables while hydraulic pressure that represents welding characteristics in diaphragm and flange joint were set to output variables. Based on the test result, a second regression equation was obtained between input and output variables and turned out significant. Besides, an influence of parameters has been confirmed through response surface analysis using the second-order regression equation and optimum welding condition was obtained through a grid-search method. The optimum welding condition was set to pulse current 84.4(A), base current 29.6(A), pulse duty 58.8(%), frequency 10(%), and welding speed 596(mm/min). Then, decent bead shape was acquired with no excessive heat input under the $2.3kgf/cm^2$ of hydrostatic pressure.

Design and Implementation of Optical Receiving Bipolar ICs for Optical Links

  • Nam Sang Yep;Ohm Woo Young;Lee Won Seok;Yi Sang Yeou1
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.717-722
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    • 2004
  • A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

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Folded Back Electrode를 이용한 BJT의 포화전압특성 개선 (Improvement of The Saturation Voltage Characteristics of BJT Using Folded Back Electrode)

  • 김현식;손원소;최시영
    • 대한전자공학회논문지SD
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    • 제41권5호
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    • pp.15-21
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    • 2004
  • 본 논문에서는 저전력 스위치에 사용되는 소자의 포화전압 특성을 개선하기 위해 새로운 구조의 BJT를 제안하고 있다 기존에 사용되던 finger transistor(FT)의 경우 포화전압이 높아 저전력 소자의 특성을 만족하지 않아 multi base island transistor(MBIT)로 구조를 변경함으로써 저전류 영역에서의 포화전압은 충분히 낮아 저전력용 소자의 특성을 만족하지만, 이 역시 고전류 영역에서는 여전히 포화전압이 높아져 저전력용 소자의 특성을 만족하지 못하는 문제가 발생한다. 이에 본 논문에서는 folded back electrode를 이용한 새로운 구조의 BJT(FBET)를 제안하여 그 특성을 조사하였다. 새로운 구조의 트랜지스터를 적용함으로써 MBIT 구조에 비해 에미터 면적은 35 % 증가하고 접촉창의 면적이 92 % 증가하여, 저 전류 영역에서의 포화 전압은 30 % 감소하였고 고 전류 영역에서의 포화 전압은 에미터 면적 증가와 에미터 접촉 창 면적 증가에 의해 각각 30 %와 7 %씩 감소하여 전체적으로는 37 %가 감소하는 특성을 나타내었다.

수평자세 맞대기 TIG 초층용접에서 최적용접조건의 선정에 관한 연구 (A Study on the Optimal Welding Condition for Root-Pass in Horizontal Butt-Joint TIG Welding)

  • 정성훈;김재웅
    • 대한기계학회논문집A
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    • 제41권4호
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    • pp.321-327
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    • 2017
  • 본 연구에서는 수평 자세에서의 TIG 용접 시 반응표면법(RSM)을 이용하여, 최적의 이면비드 형상을 구하는 연구를 진행하였다. 입력변수로는 베이스 전류, 피크 전류, 용접속도를 선정하였고, 이면비드 폭을 용접품질에 관한 출력변수로 하여 목표값을 5.4 mm로 설정하였다. Box-Behnken 실험계획법에 따라 실험을 진행하였고, 비드 폭에 관한 2차 회귀모형을 구한 후, F-테스트를 이용하여 회귀모델을 검정하였다. 그리고 망목특성의 호감도 함수를 사용하여 이면비드 형상을 평가함으로써 최적화를 수행하였다. 이렇게 도출된 최적의 용접조건은 코드화된 값으로 베이스 전류; 0.9204, 피크 전류; 0.8676, 용접속도; 0.3776이었다. 검증실험 결과 목표값에 근접한 5.38 mm의 이면비드 폭을 얻을 수 있었다.

타이타늄합금의 전자빔용접성 (Electron beam weldability of titanium alloy)

  • 이채훈;윤종원;박노광
    • 한국레이저가공학회지
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    • 제10권4호
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    • pp.13-17
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    • 2007
  • Electron beam weldability was investigated for 1mm thick cold rolled sheets of commercially pure grade titanium and Ti-6Al-4V alloy. Accelerating voltage of 40kV, beam current of 6mA, and weld speed of 0.8m/min was used and focal position of focused electron beam was just on the surface of workpiece. Microstructure of weld metal, the heat affected zone and base metal was observed using optical microscope. Vickers hardness was measured across the welds and the transverse tensile test was carried out. Hydroformability test was also carried out for the butt welded coupons of commercially pure grade titanium. For the electron beam welded C P Ti, the average grain size was equiaxed $\alpha(15{\sim}25{\mu}m)$ for base metal, coarse equiaxed $\alpha(80{\sim}200{\mu}m)$ for weld metal and annealed and enlarged grain($40{\sim}120{\mu}m$) for the HAZ. The vickers hardness of C P Ti was $180{\sim}200Hv$ for base metal, and $160{\sim}180Hv$ for the weld metal and the HAZ. For the electron beam welded Ti-6Al-4V alloy, the vickers hardness was 360Hv for the base metal, abd $400{\sim}425Hv$ for the weld metal and the HAZ. All the failure occurred at the base metal, when the transverse weld tensile test was carried out for both electron beam welded C P Ti and Ti-6Al-4V alloy. The formability of electron beam welded C P Ti was decreased compared with that of C P Ti base alloy.

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