• 한국재료학회지
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• 제11권9호
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 추계학술발표대회 개요집
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• pp.174-176
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• 2004

The duplex stainless clad vessel with 38m & over thickness shall be performed to PWHT based on the ASME code. In this case, it is well-known that precipitators such as carbides and sigma($\sigma$) phase are formed at gram boundary between ferrite and austenite phase. Therefore, a weld test for simulating this situation has been planned and performed by 3309LMo71-1 for barrier layer and E2209Tl-1 for 2nd & over layer and then carried out to investigate the overlaid weld metal. Based on the test results, it could be concluded that PWHT should be carried out after the completion of 1st(barrier) layer and then 2 & over layer should be applied.

• Progress in Superconductivity
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• 제1권1호
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• pp.47-50
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• 1999

An Ag/Ni bi-layer sheet was fabricated by the combination of powder metallurgy, diffusion bonding, cold rolling and texture annealing processes. After heat treating the cold rolled thin Ag/Ni bi-layer sheet at $900^{\circ}C$ for 4h, the excellent cube texture was developed on nickel surface. Qualitative chemical analysis using EPMA showed that inter diffusions of Ni and Ag in Ag/Ni bi-layer composite were negligible. It showed that Ag can be used as a chemical barrier for Ni and vice versa.

• 한국표면공학회지
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• 제43권5호
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• pp.217-223
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• 2010

For an application as templates of high performance with proper pore size and shape, porous anodic alumina films were prepared by anodization in oxalic acid, and formation behaviors of anodic alumina layer as well as dissolution process in acid solution have been investigated. The surface characteristics on anodic alumina layer were shown to be dependent on the fabrication parameters for anodization. For the dissolution behaviors of anodic alumina, the thickness of the barrier-type alumina layer decreased linearly with the rate of 0.98 nm/min in $H_3PO_4$ solution at $30^{\circ}C$. The changes of the anodic alumina layers were analyzed by SEM and TEM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.234-236
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• 1994

We fabricated Au/PI/Pb and Au/PI/1-layer Arachidic acid/Pb structures in order to electron transport properties through the junctions. It was found that 9-layer PI LB films function as a good tunneling barrier from the I-V properties. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidicacid LB films were clearly observed in $d^2V/dI^2-V$ curves.

• 한국세라믹학회지
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• 제45권9호
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• pp.549-555
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• 2008

The thermal barrier coating must withstand erosion when subjected to flowing gas and should also maintain good stability and mechanical properties while it must also protect the turbine component from high temperature, hot corrosion, creep, and oxidation during operation. In this study we investigated the influence of subsurface layer, $Al_2O_3$ or NiCrCoAIY bond coat layer, on the indentation damage behavior of YSZ thermal barrier coating layers deposited by electron beam physical vapor deposition (EB-PVD). The bond coat is deposited using different process such as air plasma spray (APS) or spray of high velocity oxygen fuel (HVOF) and the thickness is varied. Hertzian indentation technique is used to induce micro damages on the coated layer. The stress-strain behaviors are characterized by results of the indentation tests.

• 한국해안·해양공학회논문집
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• 제30권2호
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• pp.61-68
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• 2018

본 연구는 정상류 조건에서 폐기물 해상최종처리장에서의 오염원의 누출 방지에 필요한 최적의 최소기준을 제안하기 위하여 각각 바닥 및 연직 차수시스템의 기본적인 차수공에 대하여 침투 이류 분산해석을 수행하였다. 연구 결과 바닥 차수시스템의 최소기준으로 투수계수 $1{\times}10^{-6}cm/s$ 이하인 불투수성 지층이 두께 500 cm 이상이거나 이와 동등한 차수효과를 가진 차수시스템이어야 한다. 연직 차수시스템의 최소기준으로 투수계수 $1{\times}10^{-6}cm/s$ 이하인 두께 50 cm 이상이거나 이와 동등한 차수효과를 가진 차수시스템을 설치하여야 한다. 또한, 연직 차수시스템은 바닥 차수시스템과 일체가 되어 차수기능을 발휘하도록 충분한 근입깊이가 필요하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Journal of KIEE
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• 제11권1호
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• pp.41-45
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• 2001

The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the dielectric layer thickness and the barrier rib height on the addressing time of ac PDP are investigated. It is found out that the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. The decreasing rate were 160ns/10${\mu}{\textrm}{m}$ and 270nsd/10${\mu}{\textrm}{m}$, respectively. Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of 550ns/10${\mu}m$.

• 한국재료학회지
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• 제17권9호
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• pp.463-468
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• 2007

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.