• Title/Summary/Keyword: Barrier film

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Test and Field Application Analysis for Root Barrier using Aluminum Film Adhered to PVC and Waterproofing using E.P Sheet with Asphalt Membrane for Green Roof System (PVC 및 알루미늄을 진공 접착한 방근시트와 E.P시트 및 도막방수층을 부분 절연한 방수/방근 복합공법의 옥상녹화 적용성 평가에 관한 실험적 연구)

  • Oh, Sang-Keun;Kwon, Si-Won;Park, Jin-Sang;Park, Sang-Chan
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2006.11a
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    • pp.71-74
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    • 2006
  • The introduction of materials and methods of construction which are appropriated to property of green roofs could be a decisive factor in a long-range durability and economical maintenance cost, moreover, it support to variety construction system and organization. In this paper I focused to assure the basic system for waterproofing materials and root barrier apply to green roof as searching the application of field condition. And I suggest proper waterproofing and root barrier as considering the mutual connection and plant growth. and it can be a standard model to adopt to domestic green roof system.

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A Study on the Diffusion Barrier Properties of Pt/Ti and Ni/Ti for Cu Metallization (구리 확산에 대한 Pt/Ti 및 Ni/Ti 확산 방지막 특성에 관한 연구)

  • 장성근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.97-101
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    • 2003
  • New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

Design of Zero-Stress Encapsulation for Mechanical Stability of Flexible OLED Displays (유연 OLED 디스플레이의 기계적 안정성을 위한 제로 스트레스 봉지막 설계)

  • Jeong, Eun Gyo
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.1
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    • pp.39-43
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    • 2022
  • In this paper, a study was conducted on encapsulation technology for high mechanical stability of flexible displays. First, unlike conventional encapsulation barrier that exclude cracks as much as possible for low water vapor transmission rate (WVTR), mechanical properties were improved by using a defect suppression mechanism introduced with crack arresters. The zero-stress encapsulation barrier optimizes the residual stress of the thin film based to improve the internal mechanical stability. The zero-stress encapsulation barrier was applied to the organic light emitting diodes (OLEDs) to confirm its characteristics and lifetime. Due to improved internal mechanical stability, it has a longer lifetime more than 35% compared to conventional encapsulation technologies. As the zero-stress encapsulation barrier proposed in this study does not require additional deposition process, it is not difficult to apply it. Based on various advantages, it is expected to play an important role in flexible displays.

The Effects of the Annealing on the Reflow Property of Cu Thin Film (열처리에 따른 구리박막의 리플로우 특성)

  • Kim Dong-Won;Kim Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.38 no.1
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    • pp.28-36
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    • 2005
  • In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16~0.24 11m with aspect ratio of 4.17~6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

A Study of Functionality and Stability of LDPE-Nano TiO2 Composite Film (LDPE-나노 TiO2 복합 필름의 기능성 및 재질안정성 평가)

  • Lee, Wooseok;Ko, Seonghyuk
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.23 no.2
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    • pp.67-74
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    • 2017
  • In this work, the effects of nano $TiO_2$ on functionality and stability of low density polyethylene (LDPE) composite films were investigated for food packaging application. LDPE-nano $TiO_2$ composite films were prepared with various $TiO_2$ contents (0, 0.5, 1.0, 3.0 and 5.0wt%) by melt-extrusion and their basic properties such as crystallinity, chemical bonds and surface morphology were examined by XRD, FTIR and SEM. Ultraviolet (UV) light barrier property of as-prepared LDPE-nano $TiO_2$ composite films was also studied and the presence of nano $TiO_2$ resulted in significant improvement of UV light barrier compared to the pure LDPE film. To evaluate influence of nano $TiO_2$ on LDPE properties required as packaging material, thermal, mechanical, gas barrier and optical properties of LDPE-nano $TiO_2$ composite films were characterized with various analytical techniques including TGA, UTM, OTR, WVTR and UV-vis spectroscopy. As a result, except optical property of LDPE, no significant effects were found in other properties. Opacity of pure LDPE was greatly increased with increasing concentration of nano $TiO_2$.

[ $NH_3$ ] Pulse Plasma Treatment for Atomic Layer Deposition of W-N Diffusion Barrier (암모니아 펄스 플라즈마를 이용한 원자층 증착된 질화텅스텐 확산방지막 특성)

  • Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.29-35
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    • 2004
  • We have deposited the W-N diffusion barrier on Si substrate with $NH_3$ pulse plasma enhanced atomic layer deposition (PPALD) method by using $WF_6$ and $NH_3$ gases. The $WF_6$ gas reacts with Si that the surface corrosion occurs severely, but the $NH_3$ gas incorporated with pulse plasma and $WF_6$ gas are easily deposited W-N thin film without Si surface corrosion. Because the $NH_3$ with pulse plasma can be active species dissociated and chemisorbed on Si. Thus the Si surface are covered and saturated with nitrogen, which are able to deposit the W-N thin film. We also examine the deposition mechanism and the effect of $NH_3$ pulse plasma treatment.

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Semi-Permanent Hydrophilization of Polyester Textile by Polymerization and Oxidation Using Atmospheric Pressure Dielectric Barrier Discharge (APDBD)

  • Se Hoon Shin;Yoon Kee Kim
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.115-123
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    • 2023
  • In this paper, we report and discuss the semi-permanently hydrophilic (SPH) treatment of polyester fabric using plasma polymerization and oxidation based on atmospheric pressure dielectric barrier discharge (APDBD) technology. SiOxCy(-H) was coated on polyester fabric using Hexamethylcyclotrisiloxane (HMCTSO) as a precursor, and then plasma oxidation was performed to change the upper layer of the thin film to SiO2-like. The degradation of hydrophilicity of the SPH polyester fabrics was evaluated by water contact angle (WCA) and wicking time after repeated washing. The surface morphology of the coated yarns was observed with scanning electron microscopy, and the presence of the coating layer was confirmed by measuring the Si peak using energy dispersive x-ray spectroscopy. The WCA of the SPH polyester fabric increased to 50 degrees after 30 washes, but it was still hydrophilic compared to the untreated fabric. The decrease in hydrophilicity of the SPH fabric was due to peeling of the SiOxCy(-H) thin film coated on polyester yarns.

The Effects of SiO Gas Barrier Film on the Depositing IZO/Glass Thin Film (IZO/Glass 성막 시 SiO가스배리어막의 영향)

  • Kim, Do-Hyoung;Yoon, Han-Ki;Qiu, Zhiyong;Murakami, Ri-ichi
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.215-219
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    • 2007
  • In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

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Experimental and Simulation Study of Barrier Properties in Schottky Barrier Thin-Film Transistors with Cr- and Ni- Source/Drain Contacts (Cr- 및 Ni- 소스/드레인 쇼트키 박막 트랜지스터의 장벽 특성에 대한 실험 및 모델링 연구)

  • Jung, Ji-Chul;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.10
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    • pp.763-766
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    • 2010
  • By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

Hydrophobic Modification of Fiber Surface by Plasma Polymerizafon of Perfluoropropene (Perfluoropropene의 플리즈마중합에 의한 섬유의 소수성 표면개질)

  • Seo, Eun-Deock;Kang, Young-Reep;Lim, Hak-Sang
    • Textile Coloration and Finishing
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    • v.3 no.4
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    • pp.22-28
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    • 1991
  • Perfluoropropene was plasma polymerized in the form of thin film on PET fabrics to give hydrophobic and barrier properties without affecting air permeability. Changes in surface characteristics were detected by application of ESCA, IR, SEM and contact anglemeter. The surface properties was changed markedly to be water and stain repellent although the effect was not much sensitive to the differences of chemical components of the thin films formed at different experimental conditions. The protective barrier characteristics of the thin film was also applicable to suppress the amounts of dyes extracted from fabrics in laundering.

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