• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 추계학술대회
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• pp.159-160
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• 2018

본 논문에서는 인덕션 쿠커의 토폴로지 중 하나인 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력 반도체를 적용하여 전력 손실을 평가한다. 전력 반도체의 발전으로 Si-기반의 전력반도체를 대체할 GaN과 SiC의 Wide-Bandgap 소자들이 양산되고 있다. Wide-Bandgap 소자의 장점은 고주파수에서의 동작과 낮은 손실에 있다. 이에 인덕션 쿠커의 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력반도체를 적용하여 전력 손실을 PSIM Thermal Module을 통해 평가하고 인덕션 쿠커에 적합한 소자를 선정한다.

• 세라미스트
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• 제22권2호
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• pp.146-169
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• 2019

To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuIn_xGa_(1-x)Se₂ bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

• 한국재료학회지
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• 제33권4호
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• pp.164-174
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• 2023

The bandgap characteristics of semiconductor materials are an important factor when utilizing semiconductor materials for various applications. In this study, based on data provided by AFLOW (Automatic-FLOW for Materials Discovery), the bandgap of a semiconductor material was predicted using only the material's compositional features. The compositional features were generated using the python module of 'Pymatgen' and 'Matminer'. Pearson's correlation coefficients (PCC) between the compositional features were calculated and those with a correlation coefficient value larger than 0.95 were removed in order to avoid overfitting. The bandgap prediction performance was compared using the metrics of R² score and root-mean-squared error. By predicting the bandgap with randomforest and xgboost as representatives of the ensemble algorithm, it was found that xgboost gave better results after cross-validation and hyper-parameter tuning. To investigate the effect of compositional feature selection on the bandgap prediction of the machine learning model, the prediction performance was studied according to the number of features based on feature importance methods. It was found that there were no significant changes in prediction performance beyond the appropriate feature. Furthermore, artificial neural networks were employed to compare the prediction performance by adjusting the number of features guided by the PCC values, resulting in the best R² score of 0.811. By comparing and analyzing the bandgap distribution and prediction performance according to the material group containing specific elements (F, N, Yb, Eu, Zn, B, Si, Ge, Fe Al), various information for material design was obtained.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.346-348
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• 2014

A dispersion analysis is performed to estimate the stopband characteristics of electromagnetic bandgap (EBG) structures with defected ground structures (DGS) of various shapes. Design guidelines are suggested for both elliptical and rectangular DGS patterns that result in a maximum stopband bandwidth for a given perforation area. This method provides a basis for numerical optimization techniques that can be used in synthesizing DGS shapes to meet bandgap requirements and layout constraints.

• ETRI Journal
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• 제35권5호
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• pp.827-837
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• 2013

In this paper, we present wideband common-mode (CM) noise suppression using a vertical stepped impedance electromagnetic bandgap (VSI-EBG) structure for high-speed differential signals in multilayer printed circuit boards. This technique is an original design that enables us to apply the VSI-EBG structure to differential signals without sacrificing the differential characteristics. In addition, the analytical dispersion equations for the bandgap prediction of the CM propagation in the VSIEBG structure are extracted, and the closed-form expressions for the bandgap cutoff frequencies are derived. Based on the dispersion equations, the effects of the impedance ratio, the EBG patch length, and via inductances on the bandgap of the VSI-EBG structure for differential signals are thoroughly examined. The proposed dispersion equations are verified through agreement with the full-wave simulation results. It is experimentally demonstrated that the proposed VSI-EBG structure for differential signaling suppresses the CM noise in the wideband frequency range without degrading the differential characteristics.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.91-95
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• 2001

This paper presents that photonic bandgap structures suppressing the propagation of surface waves can improve the performance of the patch antennas on thick high dielectric constant substrate. The forbidden propagation of surface wave due to the photonic bandgap enhances the radiation efficiency and reduce the back radiation drastically with maintaining the small size and wide bandwidth of the antennas.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.528-533
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• 2016

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.413-422
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• 2002

A novel photonic bandgap(PBG) structure is proposed and measured for wide bandgap and compact circuit applications. The proposed structure realizes the ultra-wideband bandgap(2-octave) characteristics by superposing two different PBG structures into a coupled double-plane configuration. A low pass filter fabricated using 3-period of the PBG cells shows 2-octave 10 ㏈ stopband from 4.3 to 16.2 ㎓ and 0.2 ㏈ insertion loss in the passband. Moreover, we confirmed that 44∼70 % size reduction can be achieved using the proposed PBG structures. We expect this novel double-plane PBG structure is widely used for compact and wideband circuit applications, such as compact high-efficiency power amplifiers using harmonic tuning techniques.

• 한국정보통신학회논문지
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• 제11권8호
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• pp.1552-1557
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• 2007

본 논문에서는 밴드갭 기준전압을 이용하여 동작온도에 무관한 PWM(Pulse Width Modulation) 제어 회로를 설계 하였다. 동작온도에 무관한 PWM 제어기는 BiCMOS 기술을 이용하여 동작온도에 무관한 기준전압과 동작온도에 따라 변화하는 두개의 기준 전압을 이용하였다. 설계되어진 회로는 공급전압 3.3volt를 사용하였으며, 출력 주파수는 1MHz이다. 회로의 시뮬레이션 결과 동작 온도가 $0^{\circ}C$에서 $70^{\circ}C$까지 변화할 때, PWM 제어기의 출력 펄스폭의 변화는 상온에 비하여 +0.86%에서 -0.38%였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1447-1450
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• 2007

The electrical properties of organic lightemitting devices (OLEDs) with wide-bandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped $Alq_3$ EML did not vary significantly with the current density, that of the OLEDs with a BCP-doped $Alq_3$ EML changed dramatically.