• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.61-66
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• 2021

SnO2 has the wide bandgap which allows it to be used as the photocatalyst. There are many studies to enhance the photocatalytic properties of SnO2. In this study, 3-dimensional SnO2 aerogel was synthesized using epoxide-initiated sol-gel method for the optimal specific surface area. Also, graphene oxide (GO) was added before the gelation process of the aerogel to maximize the specific surface area. Addition of 0.5 wt% of GO would possibly enhance the specific surface area by 1.7 times compared with the bare tin oxide aerogel. Furthermore, enhanced specific surface area could degrade 67.3% of initial Rhodamine B in 120 minutes. To compare with the bare SnO2 aerogel, 0.5 wt% GO addition to SnO2 could double the reaction rate of the photocatalytic degradation.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.134-142
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• 2022

As industry and technology go through advancement, it is hard to search new materials which satisfy various standards through conventional trial-and-error based research methods. Crystal Graph Convolutional Neural Network(CGCNN) is a neural network which uses material's features as train data, and predicts the material properties(formation energy, bandgap, etc.) much faster than first-principles calculation. This report introduces how to train the CGCNN model which predicts the formation energy using open database. It is anticipated that with a simple programming skill, readers could construct a model using their data and purpose. Developing machine learning model for materials science is going to help researchers who should explore large chemical and structural space to discover materials efficiently.

• Journal of Surface Science and Engineering
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• v.55 no.2
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.130-136
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• 2022

Recently, organic semiconductor based indoor photovoltaics have gained attention since they exhibit excellent photovoltaic performance than that of conventional Si-based photovoltaics. In this study, we synthesize the medium bandgap polymer of PTBT and optimize PTBT:PC₇₁BM blend films by introducing solvent additives. To this end, we select DIO and CN solvent additives and vary their contents from 0 to 3 vol%. As a result, we produce the highest power conversion efficiency of 11.31% under LED 1000 lx conditions with DIO (1.5 vol%) + CN (0.5 vol%)

• Earthquakes and Structures
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• v.24 no.4
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• pp.259-274
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• 2023

In this paper, mechanical properties of periodic foundation made of concrete and rubber are investigated by a parametric study using the finite element method (FEM). Periodic foundation is a special type of seismic isolation foundation used in civil engineering, which is inspired by the meso-scale structure of phononic crystals in solid-state physics. This type of foundation is capable of reducing the seismic wave propagating though the foundation, therefore providing additional protection for the structures. In the FEM analysis, layered periodic foundation is frequently modelled due to its simplicity in numerical modeling. However, the isolation effect of periodic foundation on nuclear power plant has not been fully discussed to the best knowledge of authors. In this work, we construct four numerical models of nuclear power plant with different foundations to investigate the seismic isolation effects of periodic foundations. The results show that the layered periodic foundation can increase the natural period of the nuclear power plant like traditional base isolation systems, which is beneficial to the structures. In addition, the seismic response of the nuclear power plant can also be effectively reduced in both vertical and horizontal directions when the frequencies of the incident waves fall into some specific frequency bandgaps of the periodic foundation. Furthermore, it is demonstrated that the layered periodic foundation can reduce the amplitude of the floor response spectrum, which plays an important role in the protection of the equipment.

• Korean Journal of Materials Research
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• v.33 no.8
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• pp.344-351
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• 2023

Cesium lead iodide (CsPbI₃) with a bandgap of ~1.7 eV is an attractive material for use as a wide-gap perovskite in tandem perovskite solar cells due to its single halide component, which is capable of inhibiting halide segregation. However, phase transition into a photo inactive δ-CsPbI₃ at room temperature significantly hinders performance and stability. Thus, maintaining the photo-active phase is a key challenge because it determines the reliability of the tandem device. The dimethylammonium (DMA)-facilitated CsPbI₃, widely used to fabricate CsPbI₃, exhibits different phase transition behaviors than pure CsPbI₃. Here, we experimentally investigated the phase behavior of DMA-facilitated CsPbI₃ when exposed to external factors, such as heat and moisture. In DMA-facilitated CsPbI₃ films, the phase transition involving degradation was observed to begin at a temperature of 150 ℃ and a relative humidity of 65 %, which is presumed to be related to the sublimation of DMA. Forming a closed system to inhibit the sublimation of DMA significantly improved the phase transition under the same conditions. These results indicate that management of DMA is a crucial factor in maintaining the photo-active phase and implies that when employing DMA designs are necessary to ensure phase stability in DMA-facilitated CsPbI₃ devices.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.