• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 전기학회논문지
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• 제59권5호
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• pp.922-926
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• 2010

We have investigated the grating coupled surface plasmon resonance (GC-SPR) sensors using ZnO nano-grating structures to enhance the sensitivity of an SPR sensor. The GC-SPR sensors were analyzed using the finite-difference time-domain method. The optimum resonance angles of 49 degrees are obtained in the 150 nm wide grating structure with a period of 300 nm for the ZnO thickness of 30 nm. Then, the ZnO nano-grating patterns were fabricated by using laser interference lithography. The measured resonance angle of nano-grating patterns was around 49 degrees. Here, an enhanced evanescent field is obtained due to the surface plasmon on the edge of the bandgap when the ZnO grating structures are used to excite the surface palsmon.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.233-234
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• 2008

Radiation characteristics of a microstrip patch antenna integrated with a UC-EBG (Uniplanar Compact Electromagnetic Bandgap) structure and a Mushroom EBG structure are compared. Radiation characteristics of a patch antenna integrated with a Mushroom EBG structure are better than those of a patch antenna integrated with a UC-EBG structure.

• 대한전자공학회논문지TC
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• 제42권1호`
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• pp.99-103
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• 2005

본 논문에서는 광전자 밴드갭의 공진 특성을 이용하여 마이크로웨이브 발진기에서 위상잡음을 줄이기 위한 새로운 구조를 제시하였다. 낮은 Q값을 가지고 있는 마이크로스트립 라인 공진기의 접지 면에 PBG 구조를 적용하였다. 그래서 2.4 GHz 대역의 100 KHz offset에서 기존의 마이크로스트립 라인 발진기의 위상잡음 특성에 비해 약 10 dBc 개선시킨 결과를 얻었다. 출력전력은 7.09 dBm을 획득하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2002

In this work, a Voltage-to-Frequency Converter.(VFC) in which the output frequency is proportional to the input voltage is proposed. To obtain temperature stable characteristics the VFC is designed by using two bandgap references. The difference between simulated and calculated values is less than about 5% in output characteristics. In the VFC using BiCMOS the temperature variation of sample output frequencies is less than $\pm$0.5% in the temperature range -$25^{\circ}C$ to 75$^{\circ}C$. And the CMOS VFC has error less than $\pm$0.8% in the temperature range -$25^{\circ}C$ to 75'$^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.55-61
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• 2003

This paper describes how the optical properties of a quasi-one-dimensional photonic crystalline waveguide having a periodic air cavity are influenced by various structural parameters; the electromagnetic fields are simulated using the finite-difference time-domain method. The simulations considered four design parameters: cavity size, defect size, lattice constant, and number of cavity. The parameter sensitivity of the photonic bandgap property of the waveguide having air cavities is examined. A couple of significant design guidelines are obtained. We show that the quasi-one-dimensional photonic crystalline waveguide has significant unrealized potential.

• Journal of Advanced Marine Engineering and Technology
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• 제34권7호
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• pp.991-996
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• 2010

Blue-green and green LEDs have been successfully fabricated grown by MBE, which has introduced the $ZnS_ySe_{1-x-y}:Te_x$ (x=0.04, y~0.11-0.14) ternary epilayer as an active layer. From the I-V characteristics, the built-in voltage (~2.1 V) is very small compared to other wide bandgap LEDs, such as commercial InGaN-based LEDs (>3.2 V). From the C-V profiling, the effective carrier concentration in the p-type ZnMgSSe cladding layer was evaluated as ${\sim}2.8{\times}10^{16}\;cm^{-3}$ for the present LEDs.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.260-261
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• 2000

광결정(photonic crystal)은 빛의 파장 크기 정도의 격자 상수를 지닌 1차원, 2차원, 또는 3차원의 주기적인 구조이다. 광결정에는 광밴드갭(photonic bandgap)이라는 빛의 자발 방출이 억제된 진동수의 영역이 존재하는데, 이 영역을 이용하여 빛의 자발 방출을 조절하고 빛의 흐름을 제어할 수 있다. $^{[1]}$ 지난 10여년간 2차원, 3차원의 광결정 구조에 대한 연구가 많이 이루어져 왔는데, 최근에는 슬랩 도파관(slab waveguide)에 2차원 광결정을 만든 구조에 대한 연구가 활발하게 진행중이다. 이 구조는 평면 방향으로는 광밴드갭 효과로 광모드를 가둘 수 있고 수직 방향으로는 전반사를 이용하여 모드를 가둘 수 있어서 3차원적인 모드 confinement 효과를 얻을 수 있다. [그림 1]의 (a)에 air-bridge 형태의 2차원 광결정 슬랩(photonic crystal slab) 구조를 도식적으로 나타내었고, (b)에는 본 연구실에서 제작한 구조 표면의 scanning electron micrograph을 나타내었다. 현재 몇몇 연구 그룹에서 이와 같은 광결정 슬랩 구조를 이용한 반도체 레이저를 실현하는데 성공하였다.$^{[2,3]}$ (중략)

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.376-379
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• 2003

In this raper, proposed easy half-wavelength LPF and acceptor structure in actuality manufacture using EBG (Electromagnatic Bandgap) structure for application of micro-strip circuit. Because conventional half-wavelength LPF and acceptor is narrow line-width of High impedance, actuality manufacture is difficult. Width that in proposed structure narrow microstrip line of High impedance EBG structure use and has equal impedance embodied to wide microstrip line. Also, it is seen that actuality manufacture is available applying to half-wavelength LPF that have cut-off Frequency of 3GHz.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.241-246
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• 2016

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.