• Title/Summary/Keyword: Band-rejection characteristic

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On-wafer Tuning of the TFBAR Ladder Filters (박막공진 여파기에 대한 기판위에서의 튜닝)

  • 김종수;김건욱;구명권;육종관;박한규
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.3-6
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    • 2002
  • In this paper, Thin film bulk acoustic resonate.(TFBAR) fillers tuned by gold plated on-wafer inductors are presented. The air-gap type TEBAR is used with aluminum nitride(AIN) as piezoelectric material and platinum as top and bottom electrodes. Inductor equivalent model and modified Butterworth-Van Dyke(MBVD) model are employed for the frequency tuning of fabricated TFBAR bandpass filters. Fabricated inductor has inductance of 3 nH and Q factor of about 8 at 2 ㎓. It is clearly revealed that inductor tuning can enhance the bandwidth of ladder filters and improve out-of-band rejection characteristic around 10㏈.

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Design and Implementation of 70MHz IF Filter Using Slanted Finger IDT (기울인 전극 구조(Slanted Finger ID)를 이용한 70MHz IF필터의 설계)

  • 이택주;정덕진
    • Proceedings of the IEEK Conference
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    • 2001.06a
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    • pp.241-244
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    • 2001
  • The design and fabrication of the surface acoustic wave(SAW) bandpass filters using slanted finger interdigital electrode transducers(IDTs) is investigated. The slanted finger IDTs are used to design SAW filters with good shape factor, a flat passband, and good out-of-band rejection characteristic. The slanted finger IDTS filter was simulated of three kind of IDTs structure. uniform-uniform IDT, uniform-withdrawal weighting IDTS, withdrawal weighting-withdrawal weighting IDTS. Uniform-withdrawal weighting IDTs structure SAW filters was designed and fabricated on 112$^{\circ}$ LiTaO$_3$, 128$^{\circ}$LiNbO$_3$ substrates. Designed SAW filter has about a 30% fractional bandwidth and a 70MHz center frequency.

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Implementation of 70MHz IF Filter with Slanted Finger IDTs on 123°LiNbO3 Substrates (123°LiNbO3 기판을 이용한 기울인 빗살변환기 구조의 70MHz IF 필터 구현)

  • 이택주;정덕진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.4
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    • pp.325-331
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    • 2002
  • In this paper, surface acoustic wave(SAW) bandpass filters using slanted finger interdigital electrode transducers(IDTs) are investigated. The slanted finger IDTs are used to design SAW filters with good shape factor, a flat passband, and good out-of-band rejection characteristic. For the filter design, input-output IDT structure was simulated with modified impulse model; uniform-withdrawal weighting IDTs, withdrawal-withdrawal weighting IDTs. SAW filters of uniform-withdrawal weighting IDTs structure were designed and fabricated on $128^{\circ}LiNbO_3$ piezoelectric substrates. Implemented SAW filter has a fractional bandwidth of 30%, center frequency of 70MHz and shape factor of $1.12\pm0.01$.

Fabrication and Design of a Compact Narrow Band Pass Filter Using Slot Type Split Spiral Resonators (슬롯형 분할 나선형 공진기를 이용한 소형 협 대역통과 필터 설계 및 제작)

  • Choi, Dong-Muk;Kim, Dang-Oh;Jo, Nam-I;Kim, Che-Young
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.4
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    • pp.38-42
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    • 2010
  • In this paper, a design method of the compact narrow band filter on the microstrip board is proposed using slot-type split spiral resonators. The design technique of this filter is based on cascading filter stages consisting of the combination of slot-type split spiral resonators, capacitive gaps between patches, and inductive grounded stubs with the meander configuration. By these means, it was possible to get the nearly symmetric frequency responses, adjustable bandwidths, compact sizes. And also excellent characteristic of the out-of-band rejection is achieved in contrast to the conventional filter design technique. The measured insertion loss shows good results about -3.47dB at the center frequency($f_0$=1GHz) and passband return loss is less than -12.62dB. The 3dB fractional bandwidth(FBW) is approximately 7.3%. The results of the frequency response measured on the fabricated band pass filter substrate show satisfactory agreement with the simulated frequency responses by the MWS(Microwave Studio) of CST in the region of interest.

Compact Dual-Band Bandpass Filter Using Two Dual-Mode Resonators (두 개의 이중 모드 공진기를 이용한 소형 이중 대역 통과 필터)

  • Kim, Kyoung-Keun;Lee, Ja-Hyeon;Lim, Yeong-Seog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.12
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    • pp.1447-1453
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    • 2010
  • In this paper, the design and the fabrication of dual-band bandpass filter using two dual-mode resonators is presented. Dual-mode resonator using a short stub is miniaturized by inter-digital capacitor and stepped impedance. Two dual mode resonators are designed to have different resonant frequencies, one for the lower passband and the other for the upper passband. Transmission zero is positioned at low or high rejection bands with a sharp skirt characteristic. Dual-band operation can be achieved using dual feeding structure. For WLAN, the proposed filter at 2.45/5.25 GHz is designed and fabricated. The size of the filter is as compact as 1$10.83\;mm{\times}5.3\;mm$.

Design of a Compact Narrow Band Pass Filter Using the Circular CSRR (원형 CSRR를 이용한 소형 협 대역통과 필터 설계)

  • Choi, Dong-Muk;Kim, Dang-Oh;Kim, Che-Young
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.11A
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    • pp.918-923
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    • 2009
  • In this paper, a design method of the compact narrow band filter on the microstrip board is proposed using complementary split-ring resonators(CSRRs). The design technique of this filter is based on cascading filter stages consisting of the combination of circular CSRRs, capacitive gaps between patches, and inductive grounded stubs with the meander configuration. By these means, it was possible to get the nearly symmetric frequency responses, adjustable bandwidths, compact sizes. And also excellent characteristic of the out-of-band rejection is achieved in contrast to the conventional filter design technique. The measured insertion shows good results about -4.0dB at the center frequency($f_0=1GHz$) and passband return loss is less than -9.4dB. The 3dB fractional bandwidth(FBW) is approximately 4%. The results of the frequency response measured on the fabricated band pass filter substrate show satisfactory agreement with the simulated frequency responses by the HFSS in the region of interest.

Design of a Band-Stop Filter for UWB Application (UWB용 대역 저지 필터 설계)

  • Roh Yang-Woon;Hong Seok-Jin;Chung Kyung-Ho;Jung Ji-Hak;Choi Jae-Hoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.2 s.105
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    • pp.89-94
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    • 2006
  • A compact microstrip band-selective filter for ultra-wideband(UWB) radio system is proposed. The filter combines the traditional short-circuited stub highpass filter and coupled resonator band-stop filter on both sides of the mitered 50-ohm microstrip line. To realize the pseudo-highpass filtering characteristic over UWB frequency band(3.1 GHz to 10.6 GHz), a distributed highpass filter scheme is adopted. Three coupled resonators are utilized to obtain the band stop function at the desired frequency band. By meandering the coupled resonators, there is $29\;\%$ size reduction in footprint compared to the traditional band-stop filter using L-shaped resonators. The measured results show that the filter has a wide passband of $146.7\;\%$(2.1 GHz to 10.15 GHz) with low insertion loss and the stop band of $10.04\;\%$(5.2 GHz to 5.75 GHz) for 3-dB bandwidth. The measured group delay is less than 0.7 ns within the passband except the rejection band.

Design of 2.3 GHz BPF Using Microstrip Line Structure (테프론을 이용한 2.3 GHz 협대역 대역통과필터)

  • ;Mai Linh
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.148-150
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    • 2002
  • In this paper, a 5-coupled BPF with teflon substrate is presented. In general, for less than 1 GHz frequency, the narrow bandwidth as well as the good characteristic in the rejection frequency band could be realized using lumped elements. However, for higher than 1 GHz frequency, the distributed elements such as microstrip lines need to be used for the design of the desired BPF For less than 2 GHz, the FR4 shows good filter characteristic at low cost. However, in the range of 2 GHz ~ 10 GHz, the filters with FR4 show a big difference between simulation and measurement results. Thus, in such a high frequency region, the teflon is more preferred to the FR4. The center frequency (fc) of the proposed filter is 2.3 GHz, the insertin loss (IL) is 1.2 dB, the return loss (RL) is 30 dB, bandwidth (BW) is 100 MHz, and the size is 8.3 cm $\times$ 4.9 cm.

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Design of Single Balanced Diode Mixer with Filter for Improving Band Flatness in Microwave Frequency Down Converter (마이크로파 주파수 하향 변환기에서의 대역 평탄도 개선을 위한 여파기 집적형 단일 평형 다이오드 혼합기 설계)

  • Ryu, Seung-Kab;Hwang, In-Ho;Han, Seok-Kyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.1 s.116
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    • pp.37-43
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    • 2007
  • In this.paper, we introduce design and implementation results of the single balanced diode mixer for European point-to-point microwave radio in order to improve flatness performance. When a resonator such as RF filter is integrated with a mixer, impedance characteristic of 50 ohm is maintained only in RF band, not in LO band resulting deterioration of flatness performance because of LO power variation on the diode. In the paper, we suggest a design method of mixer integrated with image rejection filter and LO harmonic filter to have a better performance of flatness using embedding electrical length between filter and mixer's port. Frequency specification of fabricated mixer is $21.2{\sim}22.6\;GHz$ for RF, $19.32{\sim}20.72\;GHz$ for LO and 1.88 GHz+/-50 MHz for IF, respectively. Measured results show conversion loss of 8.5 dB, flatness of 2 dB, input PldB of 8 dBm, IIP3 of 15 dBm under LO power level of 10 dBm. Return losses of RF, LO and IF port are under -12 dB, -10 dB and -5 dB, respectively. Isolations of LO/RF and LO/IF are 20 dB and 50 dB, respectively.

A Study on the Feeding Structure of the High-Temperature Superconducting Hairpin-comb Filter (고온초전도 헤어핀 콤 여파기의 급전 구조에 관한 연구)

  • Yun, Seok-Sun;Park, Ik-Mo;Min, Byoung-Chul;Choi, Young-Hwan;Moon, Seung-Hyun;Lee, Seung-Min;Oh, Byung-Du
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.11-20
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    • 1999
  • We have designed and fabricated direct-and gap-coupled microstrip hairpin-comb filters by patterning double-sided YBCO films on a single 50-mm-diameter, 0.5-mm-thick $LaAlO_3$ wafer. Both filters have a center frequency at 1.773 GHz, 12 MHz bandwidth, 0.5 dB minimum insertion loss in the passband, and very strong out-of- band rejection. Due to two attenuation poles below and above the passband, the direct-coupled hairpin-comb filter showed a better skirt characteristic than the gapcoupled hairpin-comb filter which had only one attenuation pole below the passband.

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