• Nuclear Engineering and Technology
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• v.53 no.9
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• pp.3122-3125
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• 2021

Electromagnetic vortex flowmeter is a new type of instrument for detecting leakage of steam generator, and the signal processing method based on the envelope to calculate energy ratio can effectively detect bubbles in sodium flow. The signal processing method is not affected by changes in the amplitude of the sensor output signal, which is caused by changes in magnetic field strength and other factors. However, the detection sensitivity of the electromagnetic vortex flowmeter is reduced. To this end, a signal processing method based on inverse Fourier transform to calculate energy ratio is proposed. According to the difference between the frequency band of the bubble noise signal and the flow signal, only the amplitude in the frequency band of the flow signal is retained in the frequency domain, and then the flow signal is obtained by the inverse Fourier transform method, thereby calculating the energy ratio. Using this method to process the experimental data, the results show that it can detect 0.1 g/s leak rate of water in the steam generator, and its performance is significantly better than that of the signal processing method based on the envelope to calculate energy ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.259-262
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• 2003

The surface electronic state of rutile $TiO_2$, which is an oxide semiconductor and has a wide band gap of 3.1 $\sim$ 3.5 eV, was calculated by DV-$X_{\alpha}$ method, which is a sort of the first principle molecular orbital method and uses Hartre-Fock-Slater approximation. The $[Ti_{15}O_{56}]^{-52}$ cluster model was used for the calculation of bulk state and the $[OTi_{11}O_{34}]^{-24}$ model for the surface state calculation. After calculations, the energy level diagrams and the deformation electron density distribution map were compared in both models. As results, it was identified that the surface energy levels are found between the valence and conduction band of bulk $TiO_2$ on the surface area. The energy values of these surface-induced levels are lower than conduction band of bulk $TiO_2$ by 0.1 $\sim$ 1 eV. From this fact, it is expected that the surface energy levels act as donar levels in n-type semiconductor.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.112-119
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• 1996

Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.394-397
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• 1999

Impact ionization, which is a kind of a carrier-carrier interaction process occurring in a semiconductor under the influence of a high electric field, is necessary to analyse carrier transport properties. Since the parabolic or nonparabolic E-k relation is different from real band structure in high energy range, exact model of impart ionization have been presented using full band I-k relation and Fermi's golden rule. We have investigated relation of density of states, energy band structure and overlap integral. We make use of empirical pseudopotential method in order to calculate energy band structure of silicon, tetrahedron method in order to calculate density of states. We know density of states very depends on energy band structure and overlap integral depends on the primary electron energy.

• The Journal of the Korea Contents Association
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• v.7 no.7
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• pp.60-67
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• 2007

The spectrum sensing is important for decision of using frequency band. It checks the frequency band for cognitive radio system. In this paper, we apply autocorrelation function to the energy detection method. We use the autocorrelation function to improve the performance of spectrum sensing method based on the energy detection method. This method is different from cyclostationary process method where parameters such as the mean or the autocorrelation function are time-varying periodically. And we propose improved method that is robust in poor radio environment. If the proposed method applies for sensing in the cognitive radio system, it will have the structural simplicity and the fast computation of spectrum sensing.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.7C
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• pp.604-610
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• 2010

In this paper we proposed FSFN (Filter bank sub-band energy subtraction based CLSFN) method to improve the recognition performance of the existing CLSFN (Cepstral distance and Log-energy based Silence Feature Normalization). The proposed FSFN reduces the energy of noise components in filter bank sub-band domain when extracting the features from speech data. This leads to extract the enhanced cepstral features and thus improves the accuracy of speech/silence classification using the enhanced cepstral features. Therefore, it can be expected to get improved performance comparing with the existing CLSFN. Experimental results conducted on Aurora 2.0 DB showed that our proposed FSFN method improves the averaged word accuracy of 2% comparing with the conventional CLSFN method, and FSFN combined with CMVN (Cepstral Mean and Variance Normalization) also showed the best recognition performance comparing with others.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.22-31
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• 1997

We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

• The Journal of the Acoustical Society of Korea
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• v.29 no.2
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• pp.148-153
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• 2010

In speech signal processing, speech signal corrupted by noise should be enhanced to improve quality. Usually noise estimation methods need flexibility for variable environment. Noise profile is renewed on silence region to avoid effects of speech properties. So we have to preprocess finding voice region before noise estimation. However, if received signal does not have silence region, we cannot apply that method. In this paper, we proposed SNR estimation method for continuous speech signal. A Speech signal consists of Voice and Unvoiced Band in The MBE excitation model. And the energy of speech signal is mostly distributed on voiced region, so we can estimate SNR by the ratio of voiced region energy to unvoiced. We use the IMBE vocoder for the Voice or Unvoice band of segmented speech signal. Continuously we calculate the segmented SNR using that information and the energy of each band. And we estimate the SNR of continuous speech signal.