• 진공이야기
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• 제4권4호
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• pp.4-13
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• 2017

Quantum structures containing nanoparticles have attracted much attention because of their promising potential applications in electronic and optoelectronic devices operating at lower currents and higher temperatures. The quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. The Quantum dots typically have dimensions measured in nanometers, where one nanometer is 10-9 meter or a millionth of a millimeter. The emission and absorption spectra corresponding to the energy band gap of the quantum dot is governed by quantum confinement principles in an infinite square well potential. The energy band gap increases with a decrease in size of the quantum dot. In this review paper, we will discuss the quantum dot and their application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.94-97
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• 한국표면공학회지
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• 제30권2호
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• pp.136-143
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• 1997

The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.

• 한국수소및신에너지학회논문집
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• 제22권3호
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• pp.349-356
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• 2011

During the process of synthesis of $TiO_2$ powders using a high-speed planetary milling machine, Fe metallic powders were created which could be dissolved in sulfuric acid solution. With adding $NH_4OH$ solution to the $TiO_2$ powder, it was found that the crystal structure of the synthesized powder did not change and the crystal size decreased slightly. However, when the sulfur powder is mixed with $TiO_2$, the crystal structure of the MA powder was changed from anatase into rutile phase and its size decreased significantly which is in the order of nm in diameter. In case of mechanical alloying with $TiO_2$ powder only, the crystal structure of the powder was transformed into rutile phase and its size was greatly reduced into several nm. Because its size becomes fine, the energy band gap of its rutile phase is larger than that of bulk states (3.0eV).

• 한국결정성장학회지
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• 제17권5호
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• pp.179-186
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• 2007

[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1181-1182
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• 2001

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• 한국진공학회지
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• 제4권3호
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• pp.334-341
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• 1995

IB-AI-VIB2 및 IB-AI-VIB2 :Co2+ 결정을 고순도 원소를 출발 물질로 하고 iodine을 수송 매체로 사용하여 chemical transport reaction method로 성장시켰다. 성장된 결정의 결정구조는 chalcopyrite 구조였으며, energy gap은 direct band gap으로 3.514~1.814 eV 정도로 주어졌으며, cobalt를 불순물로 첨가할 때 energy gap은 감소하였다. IB-AI-VIB2 :Co2+ 결정에서 첨가된 cobalt가 모체결정의 Td symmetry site에 Co2+ ion으로 위치하여, Co2+ ion의 energy 준위 사이의 전자전이에 기인하는 불순물 광흡수 peaks가 나타났다. 이 불순물 광흡수 peaks에 결정장 이론을 적용하여 구산 1st-order spin-orbit coupling parameter(λ)는 -183~ -189cm-1정도였고, 2nd-order spin-orbit coupling parameter(P)는 225~239 cm-1정도였으며, crystal field parameter(Dq)는 328~395cm-1, Racah parameter(B)는 531~552cm-1정도였다.

• 한국전자통신학회논문지
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• 제14권5호
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• pp.877-886
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• 2019

본 연구에서는 band anticrossing 모델을 사용하여 온도와 조성비 변화에 따른 4원계 질화물계 화합물 반도체 $In_yGa_{1-y}As_{1-x}N_x$의 에너지 밴드갭과 광학상수를 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$)에서 에너지 밴드갭들이 연속적으로 감소하며, 계산된 휨 매개변수는 0.522eV가 사용되었다. 에너지 밴드갭 계산 결과는 다른 연구 결과와 대체로 잘 일치하였다. 또한 에너지 밴드갭 결과를 새롭게 제안한 모델식에 적용하여 굴절률 n과 고주파 유전상수 ${\varepsilon}$를 계산하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.