• Bulletin of the Korean Chemical Society
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• 제16권2호
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• pp.164-168
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• 1995

The band structure of nickel monoxide having a cation defect rock salt structure is calculated by means of the tight-binding extended Huckel method. The calculation is also made for the net charge, the DOS, the COOP, the electron density of the constituent atoms, and the O 1s binding energy shift when one of the adjacent nickel atoms is defected. It is found that the band gap near the Γ direction on the Brillouin zone is about 0.2 eV, and that all of the properties calculated including the electronic structure of the oxygen atom are more effectively affected by the surface defect than the inside one. The core O 1s binding energy shift is calculated by the use of valence potential method and the results are very satisfactory in comparison with the XPS experimental findings.

• 한국수소및신에너지학회논문집
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• 제5권1호
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• pp.41-49
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• 1994

Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.90.1-90.1
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• 2010

Due to the rapidly diminishing energy sources and higher energy production cost, the interest in dye-sensitized solar cells (DSSCs) has been increasing dramatically in recent years. A typical DSSC is constructed of wide band gap semiconductor electrode such as $TiO_2$ or ZnO that are anchored by light-harvesting sensitizer dyes and surrounded by a liquid electrolyte with a iodide ion/triiodide ion redox couple. DSSCs based on one-dimensional nano-structures, such as ZnO nanorods, have been recently attracting increasing attention due to their excellent electrical conductivity, high optical transmittance, diverse and abundant configurations, direct band gap, absence of toxicity, large exiton binding energy, etc. However, solar-to-electrical conversion performances of DSSCs composed of ZnO n-type photo electrode compared with that of $TiO_2$ are not satisfactory. An important reason for the low photovoltaic performance is the dissolution of $Zn^{2+}$ by the adsorption of acidic dye followed by the formation of agglomerates with dye molecules which could block the I-diffusion pathway into the dye molecule on the ZnO surface. In this paper, we prepared the DSSC with the ZnO electrode using the chemical bath deposition (CBD) method under low temperature condition (< $100^{\circ}C$). It was demonstrated that the ZnO seed layers played an important role on the formation of the ZnO nanostructures using CBD. To achieve truly low-temperature growth of the ZnO nanostructures on the substrates, a two-step method was developed and optimized in the present work. Firstly, ZnO seed layer was prepared on the FTO substrate through the spin-coating method. Secondly, the deposited ZnO seed substrate was immersed into an aqueous solution of 0.25M zinc nitrate hexahydrate and 0.25M hexamethylenetetramine at $90^{\circ}C$ for hydrothermal reaction several times.

• 한국결정성장학회지
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• 제5권1호
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• pp.78-86
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• 1995

유리기판 위에 electron beam으로 증착(EBE)된 CdTe film의 결정구조 및 전기 전도도와 광 전도도를 조사하였다. 그 구조는 거의 hexagonal phase 이었으며 Cubic phas가 약간 포함된 다결정이었다. 암 전기 전도도(dark electric conductivity)는 $1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고 $300^{\circ}C$에서 1시간 동안 열처리하여 약간 증가되었다. 온도가 증가됨에 따른 전기 전도도로부터 계산된 활성화 에너지는 실온에서 증착된 film의 경우1.446 eV이었다. 흡수계수로부터 구한 광학적 band gap은 직접 천이(direct transition)인 경우 1.52 eV이었고 간접 천이(indirect transition)인 경우 1.44eV이었다. Film의 광전도도는 약$1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고, 실온에서 대략 600 nm일때 가장 크다. 광전기 전도도는 850 nm에서 증가하기 시작하며 이는 CdTe 다결정의 활성화 에너지 (activation energy)인 1.446 eV와 근사하다.

• 방사선산업학회지
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• 제10권1호
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• pp.1-5
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• 2016

In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.

• 전자공학회논문지D
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• 제35D권2호
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• pp.40-51
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• 1998

Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.

• 한국세라믹학회지
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• 제47권4호
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• 한국재료학회지
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• 제26권6호
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.63.1-63.1
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• 2010

실리콘 박막 태양전지의 효율을 향상시키기 위해 밴드갭이 다른 흡수층을 적용한 tandem형 적층 태양전지를 이용하고 있다. 일반적으로 1.7eV이상의 밴드갭이 큰 비정질 실리콘을 이용하여 단파장의 빛을 흡수하고, 상대적으로 낮은 1.1eV 정도의 밴드갭을 갖는 미세결정 실리콘 층으로 장파장을 흡수하게 된다. 이렇게 연결된 tandem형 태양전지의 효율을 극대화하기 위해서는 각 태양전지에서 발생하는 전류 밀도를 일치시키는 것이 필요하다. 이를 위해 비정질 실리콘의 두께가 증가되는 경우가 있는데 이러한 경우 비정질 실리콘의 광열화 특성(Lihgt-induced degradation)으로 안정화 효율이 감소하게 된다. 따라서 비정질 실리콘 태양전지의 전류 밀도를 향상 시켜 두께를 최소화하는 것이 매우 중요하다. Tandem형 태양전지에서 비정질 실리콘 태양전지의 전류 밀도를 향상시키기 위해 두 개의 전지사이에 광 반사층을 적용하여 태양전지를 제조하게 된다. 이러한 경우 비정질 실리콘의 전류 밀도는 증가하지만, 광 반사 층의 장파장 흡수로 인하여 하부 태양전지의 전류 밀도 감소가 더 커지게 되어 전체 발생 전류 밀도는 오히려 감소하게 된다. 본 논문에서는 비정질 실리콘의 밴드갭을 제어하여 광 흡수 파장 영역 확대로 전류 밀도를 향상시키는 연구를 진행하였다. PECVD의 RF power 조건을 제어하여 1.75eV에서 1.67eV까지 밴드갭을 변화시켰다. 이와 같은 조건의 박막을 광 흡수층으로 갖는 p-i-n 구조의 비정질 실리콘 태양전지를 제작하였다. i층의 밴드갭이 감소됨에 따라 장파장 영역의 흡수가 확대되어 전류 밀도가 증가 하였지만, Voc의 감소가 컸다. 이는 i층의 밴드갭이 좁아짐에 따라 p층과의 불연속성이 커졌기 때문이다. 이러한 악영향을 줄이기 위해 p층과 i층 사이에 buffer층을 삽입하여 태양전지를 제작하였다. 이와 같은 최적의 buffer층 삽입을 통하여 불연속성을 줄임으로써 Voc의 상승효과를 확인하였다. 본 연구의 결과로 좁은 밴드갭을 갖는 광 흡수 층을 적용하여 전류 밀도를 향상시키고, 최적화된 buffer층 삽입으로 Voc를 향상시킴으로써 고효율의 비정질 실리콘 태양전지를 제작하였다. 이를 tandem형 태양전지에 적용할 경우 초기 효율뿐만 아니라 얇은 두께에서 제조할 수 있기 때문에 광열화 특성이 향상되어 안정화 효율의 증가를 가져올 수 있다.

• Korean Chemical Engineering Research
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• 제49권1호
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• pp.95-100
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• 2011

본 연구에서는 유기 태양전지용 작은 밴드 갭 물질(p-형 반도체)의 개발 과정에서, 2,5-dioctyloxyphenylene(OP), 3-hexylthiophene(HT) 및 2,3-dimethylthieno[3,4-b]pyrazine(TP)을 반복단위로 갖는 올리고머(oligo(OP-HT-TP))를 합성하였다. Oligo(OP-HT-TP)는 측정 온도 범위에서 무정형 상태로 존재하였으며, 범용 유기용매에 잘 용해되었다. 필름상태에서 최대 흡수 파장은 716 nm이었으며, 밴드 갭은 대략 1.20 eV로 측정되었다. Oligo(OP-HT-TP)의 HOMO와 LUMO의 에너지 준위는 각각 -5.27 eV와 -4.04 eV로 측정되었다. 그러나, 이 올리고머의 최대 흡수 파장에서 흡광도는 유기태양전지의 제작에 있어서 현재까지 가장 많이 사용되고 있는 poly(3-hexylthiophene) 흡광도의 1/5보다도 더 작은 것으로 측정되었다.